CN100338746C - Method for forming conductive bolt - Google Patents
Method for forming conductive bolt Download PDFInfo
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- CN100338746C CN100338746C CNB2004100002126A CN200410000212A CN100338746C CN 100338746 C CN100338746 C CN 100338746C CN B2004100002126 A CNB2004100002126 A CN B2004100002126A CN 200410000212 A CN200410000212 A CN 200410000212A CN 100338746 C CN100338746 C CN 100338746C
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- conduction
- hitching post
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Abstract
The present invention discloses a method for forming a conductive bolt. A liquid blasting method is used for spraying and printing a solvent with the capacity of dissolving insulating materials and a solution of conductive materials to form the conductive bolt. The obtained conductive bolt has the characteristic of low resistivity and can be used for the electrical connection of an upper conductor layer and a lower conductor layer. The manufacturing method can simultaneously achieve the three purposes of deposition, picturization and etching, and manufacturing processes are obviously simplifies.
Description
Technical field
The present invention relates to a kind of method that forms the conduction hitching post, particularly relate to and a kind ofly carry out etching and deposition simultaneously and form and conduct electricity the manufacture method of hitching post with liquid ejecting method (inkjet).
Background technology
Deposition (deposition)-photoetching (lithography)-etching (etching), for from traditional circuit-board, semiconductor subassembly, flat-panel screens, to integrated circuit (IC) etc., three basic technologies of Shi Yonging for a long time.At first in depositing operation, with vapour deposition method (evaporator) or sputtering method physical property vapour deposition process (physical vapor deposition such as (sputter), be called for short PVD), or various chemical vapour deposition technique (chemical vapor deposition, abbreviation CVD) carries out comprehensive deposition (blanketdeposition) earlier, utilize optical exposure (exposure) and photoresist developing (photoresist develop) to carry out patterning (patterning) again, stay wish to get pattern photoresist in the surface, arrange in pairs or groups various membranous wet etchings (wet etching) or dry etching (dry etching) are finished the membranous result that desire obtains various patterns again.
This technology notion, the long-term use in IC makes with flat-panel screens, the finishing an of product, often need ten surplus time repeated deposition-photoetching-etching, last electrical and rerum natura is no doubt reliable, has but paid the manufacturing equipment cost of great number.In recent years, there is the method for multiple printing (printing) notion under development, attempt to utilize the printout patterned deposition to go out the film of being wanted, especially at large-sized thin-film transistor (thin-film transistor, be called for short TFT) comparatively common, for example people such as H.Gleskova with electro-photographic (electronics sensitization) printing carbon dust material on photoresist to get the exposure of band tradition, also have people such as W.S.Wang with ultrasonic wave ink-jet method (acoustic inkjet) spray printing wax material to replace photoetching, the most direct simplification person is people such as C.M.Hong directly make TFT with ink-jet copper particulate (copper inkjet) conductor material source electrode and drain electrode (source/drain), with ink-jet method spray printing gold, silver, particulates such as copper, people such as S.B.Fuller even utilize the particulate (nano particle) of nano-scale to make the lead etc. of little brake (actuator) is the study subject of very hot in recent years door.
Yet because of the analytic ability of jet printing technique or technology live width meticulous not as general photoetching technique (lithography), no matter be to be applied to TFT or printed circuit board (PCB) (printed circuit board, be called for short PCB), maximum purpose reduces equipment and manufacturing cost exactly, so technology need be more simple and easy.General lead spray printing is comparatively universal and easy, but when the PCB of tool multi-layer conductor leads (multilevel interconnect) or TFT manufacturing process, then comparatively complicated for linking the required connecting hole (via hole) of different conductor interlayer or separating the baffle area spray printing of different layers lead, the method of making at present multi-layer conductor leads in the document has and is the polyketone resin (polyketone resin) at two layer conductor spray printings, one thick 40 μ m at two: one, to intercept first and second conductor layers, conductive layer is silver-colored particulate solution; Second covers first conductive layer as people such as Takeo Kawase with the PVP (poly-vinyl pheonl) that is coated with about 500nm comprehensively, solvent with liquid ejecting method spray printing one solubilized PVP etches connecting hole again, spray printing second conductive layer again, because of its first and second conductive layer is the organic conductive macromolecule material, resistance is far above silver-colored particulate, and the contact resistance of connecting hole is up to 0.5M Ω level simultaneously.
Summary of the invention
Technical problem to be solved by this invention provides a kind of method that forms the conduction hitching post, solves the complex process of prior art, and the unfavorable problem of the conductivity of conductive layer.
For achieving the above object, the invention provides a kind of method that forms the conduction hitching post, its characteristics are, comprise following steps:
One base material is provided;
Form one first conductive layer on this base material;
Form an organic insulator on this first conductive layer;
In the upper surface of this organic insulator, this solution has a solvent and an electric conducting material with liquid ejecting method spray printing one solution, forms perforation by this this organic insulator of solvent etching;
Remove this solvent, solidify again after electric conducting material and the dissolving of this organic insulator and form the conduction hitching post; And
Form one second conductive layer on this organic insulator and this conduction hitching post, form the electric connection of this first conductive layer and this second conductive layer by this conductive plugs post.
In order to realize that better purpose of the present invention, the present invention provide a kind of method that forms the conduction hitching post again, its characteristics are, comprise following steps:
One base material is provided;
Form a grid on this base material;
Form an organic insulator on this base material and this grid;
In the upper surface of this insulating barrier, this solution has a solvent and an electric conducting material with liquid ejecting method spray printing one solution, forms perforation by this this organic insulator of solvent etching, and this etch-stop is in this grid;
Remove this solvent, solidify again after electric conducting material and the dissolving of this organic insulator and form the conduction hitching post; And
Form an one source pole and a drain electrode and cover the semiconductor material on this organic insulator, form the electric connection of this grid and this source electrode and this grid and this drain electrode by this conductive plugs post.
The method of above-mentioned formation conduction hitching post, its characteristics are, form a grid after the step on this base material, also comprise the step of a covering metal film, to improve the surface smoothness of grid.
The method of above-mentioned formation conduction hitching post, its characteristics are that this organic insulator is by covering an organic solution on this first conductive layer, being formed by the organic solid material that this organic solution comprised.
The method of above-mentioned formation conduction hitching post, its characteristics are that the resistivity of this insulating barrier is more than 10 times of resistivity of this first conductive layer.
The method of above-mentioned formation conduction hitching post, its characteristics be, this electric conducting material is less than or equal to 5 microns electrically conductive particles by diameter and mixes.
The method of above-mentioned formation conduction hitching post, its characteristics are, after the step of the upper surface of this insulating barrier, also comprise the step of this solution of heated baking at this solution of spray printing, make this solution solidify to form this conduction hitching post.
The method of above-mentioned formation conduction hitching post, its characteristics are that the resistivity of this insulating barrier is more than 10 times of resistivity of this conduction hitching post.
Technique effect of the present invention is: the method for formation conduction hitching post of the present invention, only be about 5～10 times of aluminium block material because of the resistivity (resistivity) of metal particle spray printing, far below organic conductive macromolecule material and the PVP connecting hole integrated process that previous document proposed, so can form a low-resistance multi-layer conductor leads, this method can be integrated and be used for above PCB of micron order or the big live width manufacture process of TFT, because of once replacing deposition-photoetching-etching three processing procedures, processing procedure is comparatively simple and easy, and can reach the conductivity of preferable multi-layer conductor leads structure.
Further describe specific embodiments of the invention below in conjunction with accompanying drawing.
Description of drawings
Fig. 1 to Fig. 5 is a schematic flow sheet of making the multi-layer conductor leads structure with the SED legal system of the present invention;
Fig. 6 to Figure 10 is a schematic flow sheet of making thin-film transistor with the SED legal system of the present invention;
Figure 11 is a flow chart of making the multi-layer conductor leads structure with the SED legal system of the present invention; And
Figure 12 is a flow chart of making thin-film transistor with the SED legal system of the present invention.
Wherein, drawing reference numeral is described as follows:
11-base material 12-first conductive layer
The 14-second conductive layer 20-insulating barrier
30-solution 32-conducts electricity hitching post
40-contains and conducts electricity the two-layer conductor structure 50-thin-film transistor of hitching post
60-base material 62-grid 64-source electrode
66-drain electrode 70-insulating barrier
80-solution 82-conducts electricity hitching post
90 semi-conducting materials
Step 160 forms second conductive layer, by conducting electricity hitching post as electric connection
Step 210 provides base material
Step 220 forms grid on base material
Step 230 forms insulating barrier on base material and grid
Step 240 spray printing solution, etching isolation layer forms perforation
Step 250 is removed solvent, forms the conduction hitching post
Step 260 forms source electrode and also covers semi-conducting material with drain electrode, by conduct electricity hitching post as
The property connection
Embodiment
The present invention proposes a kind of utilization and has the solvent of dissolving insulating material ability and the solution that electrically conductive particles mixes; this solution is done conduction hitching post place with the liquid ejecting method spray printing in desire; solvent is with the insulating material eating thrown in this solution; left electrically conductive particles forms the hitching post of a tool conductivity after the while solution drying; more than be synchronous spontaneous etching deposit method, hereinafter to be referred as SED method (spontaneously-etched deposition).
Please refer to Figure 11, it makes the flow chart of a multi-layer conductor leads structure 40 for of the present invention with the SED method, and comprise the following step: step 110 provides base material; Step 120 forms first conductive layer on base material; Step 130 forms insulating barrier on first conductive layer; Step 140, spray printing solution, etching isolation layer forms perforation; Step 150 is removed solvent, forms the conduction hitching post; Step 160 forms second conductive layer, by conducting electricity hitching post as electric connection.
Below describe in detail at each step respectively.
At first provide base material: as shown in Figure 1, provide a silicon semiconductor substrate 10.
Form first conductive layer on the base material: on this base material 10, use the aqueous solution of silver-colored particulate (silver particles) metal wire to go out first conductive layer 12, form with 230 ℃ of bakings again with the direct spray printing of hot bubble type ink jet method (thermal bubble-jet printing).
Form insulating barrier on first conductive layer: as shown in Figure 2, be covered on first conductive layer 10 in photoacryl (sensitization acryl) organic solution utilization spin coating (spin coating) mode, form insulating barrier 20 again through 90～120 ℃ of soft bakings of 5 minutes (soft bake).Wherein insulating barrier 20 is formed by the organic solid material that organic solution comprised, and its resistivity is more than 10 times of resistivity of first conductive layer 12.
Spray printing solution, etching isolation layer forms perforation: as shown in Figure 3, form perforation by the solution 30 that organic solvent and electric conducting material mix in the upper surface of insulating barrier 20 with the liquid ejecting method spray printing.Wherein organic solvent is acetone (acetone) and methoxybenzene (anisole), its purpose is the insulating barrier 20 that material forms for being etched with photoacryl (sensitization acryl) organic solution, and electric conducting material then is no more than 5 microns silver-colored particulate (the nano-paste Ag of Harima company silver particulate) by diameter and mixes.
Remove solvent, form the conduction hitching post: as shown in Figure 4, be the solution 30 of eating thrown insulation material 20, after 230 ℃ of main bakings in 1 hour, form by the material that solidifies again after electric conducting material and the insulating barrier dissolving and to conduct electricity hitching post 32.Wherein the resistivity of insulating barrier 20 is more than 10 times of resistivity of conduction hitching post 32.
Step 160, form second conductive layer, by the conduction hitching post as electric connection: as shown in Figure 5, above insulating barrier 20 and conduction hitching post 32, use aqueous solution ink-jet method spray printing second conductive layer 14 of silver-colored particulate (silver particles) metal wire, finish a two-layer conductor structure 40, and by the electric connection of conduction hitching post 32 as upper and lower conductive layers.
Please refer to Figure 12, it makes the flow chart of a thin-film transistor 50 for of the present invention with the SED method, and comprise the following step: step 210 provides base material; Step 220 forms grid on base material; Step 230 forms insulating barrier on base material and grid; Step 240, spray printing solution, etching isolation layer forms perforation; Step 250 is removed solvent, forms the conduction hitching post; Step 260 forms source electrode and drain electrode and covers semi-conducting material, by conducting electricity hitching post as electric connection.
Below describe in detail at each step respectively.
At first provide base material: as shown in Figure 6, at first provide a silicon semiconductor substrate 60.
Form grid on base material: the surface at base material 60 forms grid 62, and (electroless plating chrome is Cr) to improve the surface smoothness of grid 62 to make electroless plating chromium.Wherein grid is the solution spray printing with tetrachloro-palladium acid sodium (sodium tetrachloro-palladate), and the purpose that adopts tetrachloro-palladium acid sodium is the catalyst as electroless plating chromium.
Form insulating barrier on base material and grid: as shown in Figure 7, coat on base material 60 and the grid 62 with photoacryl organic solution utilization spin rubbing method more comprehensively, and do 90～120 ℃ of soft bakings of 5 minutes and form insulating barrier 70.The optimum thickness of insulating barrier 70 is 6000～20000 (1 =10
-10M).
Spray printing solution, etching isolation layer forms perforation: as shown in Figure 8, form perforation by the solution 80 that organic solvent and electric conducting material mix in the upper surface of insulating barrier 70 with the liquid ejecting method spray printing, etch-stop is in grid 62.Wherein organic solvent is acetone (acetone) and methoxybenzene (anisole), its purpose is that to be etched with photoacryl organic solution be the insulating barrier 70 that material forms, and electric conducting material then is no more than 5 microns silver-colored particulate (the nano-paste Ag of Harima company silver particulate) by diameter and mixes.
Step 250 is removed solvent, forms the conduction hitching post: as shown in Figure 9, be the solution 80 of eating thrown insulation material 70, after 230 ℃ of main bakings in 1 hour, formed by the material that solidifies again after electric conducting material and the insulating barrier dissolving and to conduct electricity hitching post 82.Wherein the resistivity of insulating barrier 70 is more than 10 times of resistivity of conduction hitching post 82.
Step 260, form source electrode and drain electrode and cover semi-conducting material, by the conduction hitching post as electric connection: as shown in figure 10, make source electrode 64 and drain electrode 66 at last, deposited semiconductor material 90 again, finish a thin-film transistor 50, and by the electric connection of conduction hitching post 82 as grid 62 and source electrode 64 and grid 62 and drain electrode 66.
Though preferred embodiment of the present invention discloses as above; but it is not in order to limit practical range of the present invention; any those of ordinary skill in the art; without departing from the spirit and scope of the present invention; certainly can do suitable change and modification, so protection scope of the present invention must be as the criterion with the scope that claim of the present invention was defined.
Claims (12)
1, a kind of method that forms the conduction hitching post is characterized in that, comprises following steps:
One base material is provided;
Form one first conductive layer on this base material;
Form an organic insulator on this first conductive layer;
In the upper surface of this organic insulator, this solution has a solvent and an electric conducting material with liquid ejecting method spray printing one solution, forms perforation by this this organic insulator of solvent etching;
Remove this solvent, solidify again after electric conducting material and the dissolving of this organic insulator and form the conduction hitching post; And
Form one second conductive layer on this organic insulator and this conduction hitching post, form the electric connection of this first conductive layer and this second conductive layer by this conductive plugs post.
2, the method for formation conduction hitching post according to claim 1 is characterized in that this organic insulator is by covering an organic solution on this first conductive layer, being formed by the organic solid material that this organic solution comprised.
3, the method for formation conduction hitching post according to claim 1 is characterized in that the resistivity of this insulating barrier is more than 10 times of resistivity of this first conductive layer.
4, the method for formation according to claim 1 conduction hitching post is characterized in that, this electric conducting material is less than or equal to 5 microns electrically conductive particles by diameter and mixes.
5, the method for formation conduction hitching post according to claim 1 is characterized in that, after the step of the upper surface of this insulating barrier, also comprises the step of this solution of heated baking at this solution of spray printing, makes this solution solidify to form this conduction hitching post.
6, the method for formation conduction hitching post according to claim 5 is characterized in that, the resistivity of this insulating barrier is more than 10 times of resistivity of this conduction hitching post.
7, a kind of method that forms the conduction hitching post is characterized in that, comprises following steps:
One base material is provided;
Form a grid on this base material;
Form an organic insulator on this base material and this grid;
In the upper surface of this organic insulator, this solution has a solvent and an electric conducting material with liquid ejecting method spray printing one solution, forms perforation by this this organic insulator of solvent etching, and this etch-stop is in this grid;
Remove this solvent, solidify again after electric conducting material and the dissolving of this organic insulator and form the conduction hitching post; And
Form an one source pole and a drain electrode and cover the semiconductor material on this organic insulator, form the electric connection of this grid and this source electrode and this grid and this drain electrode by this conductive plugs post.
8, the method for formation conduction hitching post according to claim 7 is characterized in that, forms a grid after the step on this base material, also comprises the step of a covering metal film, to improve the surface smoothness of grid.
9, the method for formation conduction hitching post according to claim 7 is characterized in that this organic insulator is by covering an organic solution on this base material and this grid, being formed by the organic solid material that this organic solution comprised.
10, the method for formation according to claim 7 conduction hitching post is characterized in that, this electric conducting material is less than or equal to 5 microns electrically conductive particles by diameter and mixes.
11, the method for formation conduction hitching post according to claim 7 is characterized in that, after the step of the upper surface of this insulating barrier, also comprises the step of this solution of heated baking at this solution of spray printing, makes this solution solidify to form this conduction hitching post.
12, the method for formation conduction hitching post according to claim 11 is characterized in that, the resistivity of this insulating barrier is more than 10 times of resistivity of this conduction hitching post.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100002126A CN100338746C (en) | 2004-01-05 | 2004-01-05 | Method for forming conductive bolt |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100002126A CN100338746C (en) | 2004-01-05 | 2004-01-05 | Method for forming conductive bolt |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1641842A CN1641842A (en) | 2005-07-20 |
| CN100338746C true CN100338746C (en) | 2007-09-19 |
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ID=34866678
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100002126A Expired - Fee Related CN100338746C (en) | 2004-01-05 | 2004-01-05 | Method for forming conductive bolt |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100338746C (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001121834A (en) * | 1999-10-29 | 2001-05-08 | Hitachi Koki Co Ltd | Recording material of printing plate and method for forming printing plate |
| CN1404625A (en) * | 2000-10-16 | 2003-03-19 | 精工爱普生株式会社 | Etching process |
| US6602791B2 (en) * | 2001-04-27 | 2003-08-05 | Dalsa Semiconductor Inc. | Manufacture of integrated fluidic devices |
-
2004
- 2004-01-05 CN CNB2004100002126A patent/CN100338746C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001121834A (en) * | 1999-10-29 | 2001-05-08 | Hitachi Koki Co Ltd | Recording material of printing plate and method for forming printing plate |
| CN1404625A (en) * | 2000-10-16 | 2003-03-19 | 精工爱普生株式会社 | Etching process |
| US6602791B2 (en) * | 2001-04-27 | 2003-08-05 | Dalsa Semiconductor Inc. | Manufacture of integrated fluidic devices |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1641842A (en) | 2005-07-20 |
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