CN100336936C - Process for reducing particles in low pressure chemical vapor deposition equipment - Google Patents
Process for reducing particles in low pressure chemical vapor deposition equipment Download PDFInfo
- Publication number
- CN100336936C CN100336936C CNB2003101226882A CN200310122688A CN100336936C CN 100336936 C CN100336936 C CN 100336936C CN B2003101226882 A CNB2003101226882 A CN B2003101226882A CN 200310122688 A CN200310122688 A CN 200310122688A CN 100336936 C CN100336936 C CN 100336936C
- Authority
- CN
- China
- Prior art keywords
- vapor deposition
- chemical vapor
- low pressure
- pressure chemical
- carry out
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The present invention relates to a method for reducing particles, which is applied to a device for low pressure chemical vapor deposition. The method comprises: firstly, a charging procedure is carried out to set the state of the device for low pressure chemical vapor deposition, wherein the charging procedure comprises a first cleaning procedure; secondly, a processing procedure is carried out for chemical vapor deposition; finally, a discharging procedure is carried out to revert the state of the device for low pressure chemical vapor deposition, wherein the discharging procedure comprises a second cleaning procedure. The method is capable of reducing the harm to the device by particles and increasing the utilization factor of the device.
Description
Technical field
The present invention relates to reduce in a kind of low pressure chemical vapor deposition equipment the method for particulate, reduce the method for particulate in particularly a kind of boiler tube formula low pressure chemical vapor deposition equipment.
Background technology
Chemical vapour deposition (Chemical Vapor Deposition, CVD) development of process many decades, become film deposition tool most important and main in the manufacture of semiconductor, the film that all semiconductor subassemblies are required, no matter be conductor, semi-conductor or dielectric materials, all can be configured by the CVD method.The kind of CVD is quite numerous and diverse, with atmospheric pressure cvd, low pressure chemical vapor deposition, i.e. three kinds of CVD designs such as electricity slurry CVD, is used as main division foundation usually.
With the example that is designed to of low pressure chemical vapor deposition, along with the use of 6 o'clock and 8 o'clock wafers, common in the past batch (batchtype) LPCVD design, the designing institute of gradually at every turn only being handled the one chip formula (single wafer) of a wafer replaces.The batch design of unique reservation then is boiler tube formula (tubular type) LPCVD of outward appearance and diffusion furnace (diffusion furnace) and oxidized still (oxidation furnace) fairly similar.Boiler tube formula LPCVD is the reactor of a kind of hot wall type (hot wall).Reactor itself is constituted with the quartz after tempered.Gas is sent in the boiler tube from the front end of boiler tube usually.The chip that is deposited then places equally with on the made brilliant boat of quartz (boat), and along with brilliant boat is put into the appropriate location of boiler tube, so that deposit.Carry out sedimentary material with boiler tube formula LPCVD at present, mainly contain polysilicon, silicon-dioxide, reach silicon nitride etc.The temperature that processing procedure is controlled, greatly about about 400 ℃ to 850 ℃, pressure then at several Torr between the 100m Torr.Because the entire reaction chamber of this CVD is all under temperature of reaction, so tube wall also has the deposition of equity, so boiler tube must be cleaned termly.On the other hand, even the design of one chip formula LPCVD though the deposition thickness that the reaction chamber locular wall is born is less than boiler tube formula LPCVD widely, is cleaned termly but get.
Generally speaking, the clean operation of LPCVD reaction chamber, can carry out between the deposition between the successive two plates, after it is usually directed to on-line wafer shifted out reaction chamber, carry out clean operation again, but so step arrangement must spend the considerable time to keep the cleaning of reaction chamber, increases the sedimentary time of whole execution.Some way can utilize the mode process chamber of vacuum cleaning, yet a small amount of fragment of reaction chamber still might cause extra pollution under the situation that does not shift out on-line wafer, and the cost of importing vacuum cleaning is still relatively very high.Therefore, the clean operation of carrying out the LPCVD reaction chamber as the mode of full blast how is one of very important problem.
Summary of the invention
For the problems referred to above, desire reduces the particulate in the boiler tube, the invention provides the method for a kind of minimizing particulate (particle), is applied in the low pressure chemical vapor deposition equipment, carries out clear program in the charging/discharge stage, can reduce the particulate in the boiler tube.
One of another object of the present invention, the method that is to provide a kind of increase boiler tube rate of utilization (up time) and prolongs preventive maintenance (preventing maintain), be applied in the boiler tube formula low pressure chemical vapor deposition equipment, in carrying out sedimentary the treatment stage, wafer do not carry out clear program, but boiler tube equipment is kept the state that an executed is removed, awaited orders, can increase the rate of utilization of equipment, and prolong preventive maintenance.
According to above-mentioned, the invention provides the method for a kind of minimizing particulate (particle), be applied in the low pressure chemical vapor deposition equipment.At first carry out charging (loading) program,, wherein comprise one in the charging procedure and clean (purge) program for the first time in order to set the state of low pressure chemical vapor deposition equipment.Secondly, promptly carry out one and handle (processing) program, in order to carry out chemical vapour deposition.Afterwards, carry out a discharge (unloading) program, in order to reply the state of low pressure chemical vapor deposition equipment, wherein the discharge program comprises a wash procedure for the second time.
Description of drawings
Fig. 1 is the present invention's the program synoptic diagram that is implemented on low-pressure chemical vapor deposition.
Illustration
10 charging stages
The treatment stage of 12
14 discharge stages
The program of 16 normal pressure backfills
18 charging stage programs
The program that 20 switches leak hunting and check
The program of 22 vacuum removings
Embodiment
The invention provides a kind of method that reduces particulate, be applied in the boiler tube of a low pressure chemical vapor deposition equipment.At first, carry out the boiler tube of the wash procedure first time in an atmospheric pressure state.Afterwards, carry out a handling procedure, be used to carry out in the boiler tube chemical vapour deposition.Then, carry out the boiler tube of the wash procedure second time in a vacuum state.So can omit the wash procedure in the handling procedure, improve the rate of utilization of equipment.
Fig. 1 is the present invention's the program synoptic diagram that is implemented on low-pressure chemical vapor deposition.In one of the present invention embodiment, the program of low-pressure chemical vapor deposition mainly is divided into charging (loading) stage 10, handles (processing) stage 12, reaches discharge (unloading) stage 14.For boiler tube formula low pressure chemical vapor deposition equipment, the charging stage carry out to be handled the preposition preparation work in (processing) stage, for example the self-correction of the reading of the program (recipe) set of environmental parameter, board with confirm or the like.Treatment stage, comprises and inserts brilliant boat (boat-up) and move brilliant boat, pre-deposition (pre-deposition), chemical vapour deposition, removing (purge), backfill (back-fill) in boiler tube, in boiler tube, shift out brilliant boat (boat-down) or the like.The discharge stage comprises the answer of ambient condition, for example exhaust, cooling or the like.
One of feature of the present invention is to add in the charging stage to carry out for the first time to remove.When the charging stage (also being called P-charge), call out the required clear program first time, carry out this clear program for the first time, promptly allow non-pressurized reaction chamber (chamber ATM) carry out the program 16 and charging stage program 18 of a normal pressure backfill simultaneously.The detailed step of clear program for the first time comprises the step of three backfills and normal pressure inspection (ATM check), wherein the normal pressure inspection comprise open switch (shutter open), with removing (purge) step.One of advantage of the present invention, be in the charging stage, carry out the program and charging stage program of a backfill simultaneously, before making that reaction chamber is not the treatment stage beginning to be performed one, promptly through removing for the first time, and this removes and carries out charging stage program for the first time and carries out simultaneously, does not therefore increase many extra times.
Afterwards, the treatment stage of beginning to carry out to carry out the deposition work on the wafer.Be understandable that, the treatment stage in, in order to ensure the cleaning in the reaction chamber, between chemical vapour deposition step and backfill step, being still can loop cleaning.But in the present invention's embodiment,, therefore can reduce owing to carry out clear program for the first time in the charging stage, the removing step in the treatment stage of even the need.
When the treatment stage be finished, after brilliant boat shifted out from boiler tube, low pressure chemical vapor deposition equipment is just carried out the discharge stage.One of feature of the present invention is that discharge adds execution and removes for the second time in the stage.When the discharge stage (also being called P-discharge), call out the required clear program second time, carry out this clear program for the second time, promptly allow cleaning reaction chamber (chamber purge) carry out a switch the leak hunting program 20 of (shutter leak check) and the program 22 of vacuum removing (vacuum-purge) simultaneously.The detailed step of clear program for the second time, comprise vacuum 1, remove 1, vacuum 2, remove 2, vacuum 3, with remove 3.One of advantage of the present invention is in discharge in the stage, carries out secondary clear program simultaneously, the equipment that makes (stand-by) state that keeps at any time awaiting orders.Need cooperate with traditional method, the treatment stage of just carrying out three times once loop cleaning in comparison, it is about 25% that the inventive method can improve the rate of utilization of boiler tube formula low pressure chemical vapor deposition equipment, prolongs the problem of preventive maintenance (PM) and particle defects widely.
Above-described embodiment only is used to illustrate technological thought of the present invention and characteristics, its purpose makes those skilled in the art can understand content of the present invention and is implementing according to this, therefore can not only limit claim of the present invention with present embodiment, be all equal variation or modifications of doing according to disclosed spirit, still drop in the claim of the present invention.
Claims (3)
1. method that reduces particulate is applied to comprise in the low pressure chemical vapor deposition equipment:
Carry out a charging procedure, in order to set the state of low pressure chemical vapor deposition equipment, wherein comprise in this charging procedure and carry out a wash procedure for the first time, described first time, wash procedure comprised: carry out a backfill program; Open a switch in the low pressure chemical vapor deposition equipment; And one of carry out in the low pressure chemical vapor deposition equipment normal pressure wash procedure;
Carry out a handling procedure, in order to carry out chemical vapour deposition; And
Carry out a discharge program, in order to reply the state of low pressure chemical vapor deposition equipment, wherein this discharge program comprises a wash procedure for the second time, and described second time, wash procedure comprised: the program of leaking hunting of one of carrying out in the low pressure chemical vapor deposition equipment switch; And one of carry out in the low pressure chemical vapor deposition equipment vacuum cleaned program.
2. the method for minimizing particulate according to claim 1 wherein comprises the program of call environment parameter setting in this charging procedure.
3. the method for minimizing particulate according to claim 1, wherein carry out this handling procedure and comprise:
Insert a brilliant boat in one of low pressure chemical vapor deposition equipment boiler tube;
Carry out a vapor deposition step; And
From the boiler tube of low pressure chemical vapor deposition equipment, shift out brilliant boat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101226882A CN100336936C (en) | 2003-12-24 | 2003-12-24 | Process for reducing particles in low pressure chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101226882A CN100336936C (en) | 2003-12-24 | 2003-12-24 | Process for reducing particles in low pressure chemical vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1632164A CN1632164A (en) | 2005-06-29 |
| CN100336936C true CN100336936C (en) | 2007-09-12 |
Family
ID=34844583
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101226882A Expired - Fee Related CN100336936C (en) | 2003-12-24 | 2003-12-24 | Process for reducing particles in low pressure chemical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100336936C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101391258B (en) * | 2007-09-17 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Precleaning method of reaction system |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560428A (en) * | 2012-03-09 | 2012-07-11 | 上海宏力半导体制造有限公司 | Chemical vapor deposition machine station |
| CN103540909B (en) * | 2012-07-13 | 2016-05-11 | 无锡华润上华科技有限公司 | A kind of method of LPCVD deposit spathic silicon |
| CN103839768B (en) * | 2012-11-20 | 2016-09-07 | 上海华虹宏力半导体制造有限公司 | Reduce the method for granule foreign in tetraethyl orthosilicate body of heater |
| CN104805418B (en) * | 2014-01-23 | 2018-05-08 | 北京北方华创微电子装备有限公司 | Process control method and system in Films Prepared by APCVD |
| CN110943003B (en) * | 2018-09-21 | 2023-08-18 | 北京北方华创微电子装备有限公司 | Process gas purging method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5888579A (en) * | 1996-07-29 | 1999-03-30 | Texas Instruments-Acer Incorporated | Method and apparatus for preventing particle contamination in a process chamber |
| US5902494A (en) * | 1996-02-09 | 1999-05-11 | Applied Materials, Inc. | Method and apparatus for reducing particle generation by limiting DC bias spike |
| JP2003273188A (en) * | 2002-03-13 | 2003-09-26 | Nec Kansai Ltd | Semiconductor manufacturing device |
-
2003
- 2003-12-24 CN CNB2003101226882A patent/CN100336936C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5902494A (en) * | 1996-02-09 | 1999-05-11 | Applied Materials, Inc. | Method and apparatus for reducing particle generation by limiting DC bias spike |
| US5888579A (en) * | 1996-07-29 | 1999-03-30 | Texas Instruments-Acer Incorporated | Method and apparatus for preventing particle contamination in a process chamber |
| JP2003273188A (en) * | 2002-03-13 | 2003-09-26 | Nec Kansai Ltd | Semiconductor manufacturing device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101391258B (en) * | 2007-09-17 | 2010-06-09 | 中芯国际集成电路制造(上海)有限公司 | Precleaning method of reaction system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1632164A (en) | 2005-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1958878B (en) | Method of using film formation apparatus | |
| KR20190139770A (en) | Etching method and etching apparatus | |
| CN100336936C (en) | Process for reducing particles in low pressure chemical vapor deposition equipment | |
| CN103219227A (en) | Plasma cleaning method | |
| CN107706093A (en) | A kind of manufacture method of aluminium pad | |
| US6468903B2 (en) | Pre-treatment of reactor parts for chemical vapor deposition reactors | |
| CN109750274B (en) | Semiconductor production equipment and semiconductor process method | |
| EP2650913A1 (en) | Dry cleaning method | |
| CN109659254B (en) | Method for processing object to be processed | |
| CN101593667B (en) | Method for improving consistency of thickness of dielectric layers deposited on different substrates | |
| JP7342695B2 (en) | Epitaxial wafer manufacturing system and manufacturing method | |
| CN106929822A (en) | A kind of membrane deposition method | |
| CN201162044Y (en) | Air-injection device and low-pressure chemical vapor deposition equipment | |
| CN113261082A (en) | Method for removing deposit and method for forming film | |
| CN100378922C (en) | Wafer washing method and grid structure mfg. method | |
| JP4258000B2 (en) | Processing method using multi-chamber system | |
| US20070031596A1 (en) | Method for reducing particle contamination in a low pressure CVD apparatus | |
| CN103243308A (en) | Air extractor, low-pressure chemical vapor deposition equipment and chemical vapor deposition method | |
| CN113529057B (en) | Semiconductor manufacturing method and multi-sheet type deposition apparatus | |
| US20230064100A1 (en) | Process and apparatus to remove metal-containing films from a chamber | |
| US11515200B2 (en) | Selective tungsten deposition within trench structures | |
| JP4961064B2 (en) | Process and vacuum processing reactor apparatus for dry etching | |
| CN114959642B (en) | Method for reducing metal ion content in CVD machine, storage medium and terminal | |
| US20230193463A1 (en) | Gas Distribution Apparatuses | |
| CN100494999C (en) | Method for monitoring CVD front cavity cleanness |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070912 Termination date: 20100125 |