CN100336095C - 主动矩阵型显示装置 - Google Patents
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Abstract
本发明提供一种主动矩阵型显示装置,其目的在于谋求各像素开口率的提升,并且确保保持电容的电容值。其中,藉由将驱动电源线23叠置于各像素的保持电容线22上,俾缩小驱动电源线23的形成面积。此外,以沿着配列于列方向的多个像素选择TFT11而一面以锯齿状折曲一面延伸的方式配置保持电容线22,从而谋求像素面积的有效活用。此外,将连接像素选择TFT11的源极11s和驱动TFT12的栅极12g间的接点的纵向方向以平行于保持电容线22的方式配置。
Description
技术领域
本发明有关一种主动矩阵型显示装置,尤有关一种主动矩阵型显示装置的像素布局。
背景技术
近年来,使用有机电激发光(Organic Electro Luminescence,以下简称有机EL)组件的有机EL显示装置作为替代CRT和LCD的显示装置而受到瞩目。特别是,目前正在发展一种具备有薄膜晶体管(ThinFilm Transistor,以下简称TFT),并将薄膜晶体管当作用以使有机EL组件驱动的开关组件的主动矩阵型有机EL显示装置。
目前,当作平面显示器使用的主动矩阵型有机EL显示装置的彩色显示已被实用化,而在此种彩色有机EL显示装置中,将以矩阵状配置于玻璃基板上的多个像素分配成例如R(红色)、G(绿色)、B(蓝色)的任一颜色。
在实现此种主动矩阵型彩色有机EL显示装置时,像素的布局型态已知有,将同色像素于行方向以条状并列的条状配列,以及,将同色像素于行方向中以每行偏移预定间距的方式并列的三角状配列。由于该三角状配列能够以更佳的高分辨率显示影像,因此适合做为彩色有机EL显示装置的像素布局。
在下述的专利文献1中记载有使用三角状配列的主动矩阵型彩色有机EL显示装置。
专利文献1:日本国专利公开第2003-108032号公报
发明内容
发明欲解决的问题
发明的目的为,在使用三角状配列的主动矩阵型彩色有机EL显示装置中,提供一种像素布局,用以谋求各像素的开口率的提升,并且可确保保持电容的电容值。
解决问题的手段
本发明的主动矩阵型显示装置具有以矩阵状配置的多个像素,而各像素具备有:被供给像素选择信号的像素选择线;被供给显示资料的资料线;对应前述像素选择信号而将前述显示资料取入像素中的像素选择晶体管;由与前述像素选择晶体管的源极形成一体的第1电极以及隔着电容绝缘膜与该第1电极相对向的前述保持电容线所构成,以保持前述显示资料的保持电容;显示组件;以及对应前述保持电容中所保持的显示数据而从驱动电源线供给电流或电压至前述显示组件的驱动晶体管;同时,前述驱动电源线以延伸于前述保持电容线上的方式,一面折曲一面延伸于行方向;前述各像素对应于红色、绿色、蓝色的任一者,而对应于红色、绿色、蓝色的各色像素的保持电容的图案形状各自不同。
此外,除了上述构造之外,保持电容线横跨过配置于列方向的多个像素,并沿着前述像素选择晶体管一面以锯齿状折曲一面延伸。
再者,除了上述构造之外,前述像素选择晶体管的源极和前述驱动晶体管的栅极间以接点构造加以连接,而该接点构造由连接前述像素选择晶体管的源极和金属层的第1接点,以及连接前述金属层和前述驱动晶体管的栅极的第2接点所构成,并且将前述第1及第2接点与前述保持电容线平行配置。
发明效果
依据本发明,可谋求各像素的开口率的提升,并且能够确保保持电容的电容值。
附图说明
第1图为显示本发明实施型态的主动矩阵型彩色有机EL显示装置的像素布局的示意图;
第2(a)图及第2(b)图为对应于第1图的虚线所围住的区域的平面模式图;
第3图为对应于第1图的虚线所围住的区域的平面模式图;以及
第4图为沿着第2图的X-X线的剖视图(第4(a)图),以及沿着Y-Y线的剖视图(第4(b)图)。
主要组件符号说明
10 有机EL组件 11 像素选择TFT
11s 源极 11d 漏极
12 驱动TFT 12d 漏极
12g 栅极 12g 栅极
13 保持电容 20 像素选择线
21R,21G,21B 资料线
22 保持电容线 23 驱动电源线
30 绝缘性基板 31 栅极绝缘膜
32 层间绝缘膜 33 平坦化绝缘膜
34 铝层 40 接点
41 凹部 42 主动层
43 第1电极 44 电容绝缘膜
Vpp 正驱动电压 CV 负电压
C1 第1接触孔 C2 第2接触孔
具体实施方式
以下参照图式说明用以实施本发明的最佳型态(以下称为实施型态)。
第1图为显示本发明实施型态的主动矩阵型彩色有机EL显示装置的像素布局的示意图。在第1图中虽然仅显示2列3行的像素配列,但实际上在行方向以及列方向反复此像素配列,而构成n列m行的矩阵状像素区域。
在第1图中,一个像素为由点虚线所围住的区域,而在第1行中配列有对应于R、G、B的像素,在第2行中则配列有仅偏移预定间距(在第1图中约为1.5像素)的R、G、B像素,而构成三角状配列。此外,对应于R、G、B的各像素的间距彼此不同。
各像素具备有机EL组件10、像素选择TFT11(TFT为薄膜晶体管的简称)、用以驱动有机EL组件10的驱动TFT12、以及保持电容13。
举例而言,在像素选择TFT11中,是将系为像素选择线的栅极线20连接至以N信道型形成并以双栅极形成的栅极,并且将保持电容13连接至源极11s。此外,在对应于R的像素中,将供给R的显示资料的资料线21R连接至像素选择TFT11的漏极11d,而在对应于G的像素中,将供给G的显示资料的资料线21G连接至像素选择TFT11的漏极11d,而在对应于B的像素中,将供给B的显示资料的资料线21B连接至像素选择TFT11的漏极11d。
保持电容13由与像素选择TFT的源极11s形成一体的第1电极,以及隔着该第1电极及电容绝缘膜而对向配置于其上方的保持电容线22所构成。
此外,将像素选择TFT11的源极11s连接至例如以P信道型形成的驱动TFT12的栅极。将供给正驱动电压Vpp的驱动电源线23连接至驱动TFT12的源极12s,并将有机EL组件10的阳极连接至驱动TFT12的漏极12d。将负电压CV供给至有机EL组件的阴极。阳极和阴极间则形成有机EL发光层。
在主动矩阵型彩色有机EL显示装置中,主要藉由形成于各像素的阳极的形成区域来界定各像素的发光区域。其余的像素选择TFT11、驱动TFT12、保持电容13则无助于发光。于此,为了提高在像素面积中所占的发光面积的比例,亦即开口率,而必须尽可能地提高发光区域的面积,并尽可能地缩小其余的像素选择TFT11等的形成面积。
因此,在本实施型态中,特别采用以下的像素布局。(1)藉由在各像素的保持电容线22上叠置驱动电源线23,而缩小驱动电源线23的形成面积。(2)藉由以沿着配列于列方向的多个像素选择TFT11而一面以锯齿状折曲一面延伸的方式配置保持电容线22,从而谋求像素面积的有效活用。(3)将连接像素选择TFT11的源极11s和驱动TFT12的栅极12g间的接点的纵向方向以平行于保持电容线22的方式配置。
以下参照第1图、第2图以及第3图具体地进行说明。第2图为对应于第1图的虚线所围住的区域的平面模式图,而为了易于了解图式内容,在第2(a)图中,以斜线表示形成有像素选择TFT11的源极11s、漏极11d的主动层区域,而在第2(b)图中,以斜线表示驱动电源线23。
以下对上述第(1)点进行说明。在第1图中,若以于行方向邻接配列的像素RB、像素LG为目标进行说明的话,则驱动电源线23沿着像素LG的左边延伸,于该路径途中和驱动TFT12的源极12s连接,然后折曲而横切过像素LG,然后沿着像素RB的右边延伸。于此,在驱动电源线23横切过像素LG的位置,驱动电源线23以叠置于保持电容线22上的方式延伸。
其次,对上述第(2)点进行说明。保持电容线22沿着第2图中的3个像素选择TFT11,而一面以锯齿状折曲一面延伸。亦即,保持电容线22在邻接的像素选择TFT11、11的双栅极之间,以接近栅极线20的方式折曲,然后,以通过双栅极前端的方式折曲,然后,在其次的双栅极之间以接近栅极线20的方式折曲。像素选择TFT11的源极11s则对向配置于保持电容线22的下层,并于此部分形成保持电容13,而有效活用狭小的面积,确保适当的电容值。
保持电容13的电容值由像素选择TFT11的源极11s和栅极线20叠置的部分的面积来加以界定。在本实施型态中,虽然该叠置部分的形状在对应于R、G、B的各像素中不同,但将其面积设计成相等。
其次,对上述第(3)点进行说明。将保持电容线22以锯齿状折曲而配置时,在保持电容线22中便会形成平面视的凹凸部。因此,连接像素选择TFT11的源极11s和驱动TFT12的栅极12g的接点40的纵向方向与保持电容线22平行配置,并以在保持电容线的凹部41中收容接点40一部份的方式配置接点40。藉此,由于能够节省各像素的上下方向的面积,因而能够确保提高发光区域,因此能够提升开口率。
以下,参照第4图对接点40的构造进行详细说明,其中,驱动电源线23叠置于保持电容线22上而延伸。第4图为沿着第2图的X-X线的剖视图(第4(a)图),以及沿着Y-Y线的剖视图(第4(b)图)。
如第4(a)图所示,在玻璃基板等的绝缘性基板30上形成有主动层42。主动层42使用藉由雷射退火处理而将非晶硅(Amorphous Silicon)予以多结晶化所得到的多晶硅。在主动层42中形成有像素选择TFT11的源极11s、漏极11d、与源极11s为一体的保持电容13的第1电极43。在主动层42上则形成有栅极绝缘膜31,以及与栅极绝缘膜31为一体且与栅极绝缘膜31同时形成的电容绝缘膜44。
在栅极绝缘膜31上形成作为像素选择TFT11的栅极的栅极线20,而在电容绝缘膜44上形成作为第2电极的保持电容线22。栅极线20例如以铬(chrome)层形成。此外,在栅极线20、保持电容线22上形成层间绝缘膜32。另外,驱动电源线23隔着层间绝缘膜32在保持电容线22上延伸。在驱动电源线23上则形成有平坦化绝缘膜33。
此外,第4(b)图显示接点40的构造,在绝缘性基板30上形成有像素选择晶体管11的源极11s的延伸部分,并且透过形成于栅极绝缘膜44和层间绝缘膜32中的第1接触孔C1,将铝(Al)层34连接于源极11s的延伸部分。此外,将驱动TFT12的栅极12g邻接源极11s配置,并且透过形成于层间绝缘膜32中的第2接触孔C2,将铝层34连接于驱动TFT12的栅极12g。
如此,依据本实施型态,由于能够将有机EL组件10的发光区域以外的部分的面积予以缩小,因此能够提升对应于R、G、B的各像素的开口率。另外,在本实施型态中,对应于R、G、B的各像素即使颜色相同开口率也不相同。举例而言,虽然第1图的像素RB和像素LB两者皆为绿色的像素,但其开口率却不同。
另外,虽然以主动矩阵型彩色有机EL显示装置为例说明本实施型态,但本发明也能够广泛地应用于具有像素选择TFT和保持电容的一般主动矩阵型显示装置,例如,主动矩阵型LCD显示装置等。
Claims (6)
1.一种主动矩阵型显示装置,具有以矩阵状配置的多个像素,而各像素具备有:
被供给像素选择信号的像素选择线;
被供给显示资料的资料线;
对应前述像素选择信号而将前述显示资料取入像素中的像素选择晶体管;
由与前述像素选择晶体管的源极形成一体的第1电极以及隔着电容绝缘膜与该第1电极相对向的前述保持电容线所构成,以保持前述显示资料的保持电容;
显示组件;以及
对应前述保持电容中所保持的显示数据而从驱动电源线供给电流或电压至前述显示组件的驱动晶体管;同时
前述驱动电源线以延伸于前述保持电容线上的方式,一面折曲一面延伸于行方向;
前述各像素对应于红色、绿色、蓝色的任一者,而对应于红色、绿色、蓝色的各色像素的保持电容的图案形状各自不同。
2.如权利要求1所述的主动矩阵型显示装置,其中,前述保持电容线横跨过配置于列方向的多个像素,并沿着前述像素选择晶体管一面以锯齿状折曲一面延伸。
3.如权利要求第1项或第2项所述的主动矩阵型显示装置,其中,前述像素选择晶体管的源极和前述驱动晶体管的栅极间以接点构造加以连接,前述接点构造是由第1接点与第2接点构成,前述第1接点用以连接前述像素选择晶体管的源极和形成在前述保持电容线上的金属层,前述第2接点用以连接前述金属层和前述驱动晶体管的栅极,前述第1及第2接点与前述保持电容线平行配置。
4.如权利要求1所述的主动矩阵型显示装置,其中,前述对应于红色、绿色、蓝色的保持电容的电容值彼此相等。
5.如权利要求1所述的主动矩阵型显示装置,其中,前述红色、绿色、蓝色的各色像素的间距互不相同。
6.如权利要求5所述的主动矩阵型显示装置,其中,前述红色、绿色、蓝色的各色像素即使颜色相同,开口率也不相同。
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KR100636503B1 (ko) * | 2004-06-25 | 2006-10-18 | 삼성에스디아이 주식회사 | 발광 표시장치와 그의 제조방법 |
KR20070067308A (ko) * | 2005-12-23 | 2007-06-28 | 삼성전자주식회사 | 유기 발광 다이오드 및 그 제조 방법, 상기 유기 발광다이오드를 포함하는 유기 발광 표시 장치 |
KR101293568B1 (ko) | 2006-02-23 | 2013-08-06 | 삼성디스플레이 주식회사 | 표시 장치 |
US7863612B2 (en) * | 2006-07-21 | 2011-01-04 | Semiconductor Energy Laboratory Co., Ltd. | Display device and semiconductor device |
JP2008241784A (ja) * | 2007-03-26 | 2008-10-09 | Sony Corp | 表示装置及びその製造方法 |
KR100897902B1 (ko) * | 2008-01-03 | 2009-05-18 | 고려대학교 산학협력단 | 유기발광표시장치 |
KR100926635B1 (ko) | 2008-05-28 | 2009-11-13 | 삼성모바일디스플레이주식회사 | 유기전계발광 표시장치 및 그의 구동방법 |
JP5439912B2 (ja) * | 2009-04-01 | 2014-03-12 | セイコーエプソン株式会社 | 電気光学装置及びその駆動方法並びに電子機器 |
CN103137054B (zh) * | 2011-11-30 | 2015-09-23 | 上海中航光电子有限公司 | 双栅极横向像素反转驱动方法 |
KR101949675B1 (ko) * | 2012-11-14 | 2019-04-22 | 엘지디스플레이 주식회사 | 유기발광 표시장치 및 이의 제조방법 |
KR101996438B1 (ko) * | 2012-12-13 | 2019-07-05 | 삼성디스플레이 주식회사 | 표시 장치용 기판, 이를 포함한 표시 장치 및 표시 장치의 제조 방법 |
JP6372084B2 (ja) * | 2014-01-22 | 2018-08-15 | セイコーエプソン株式会社 | 発光装置、及び電子機器 |
CN108899339B (zh) * | 2018-05-07 | 2021-04-30 | 武汉天马微电子有限公司 | 显示面板和显示装置 |
JP7256622B2 (ja) | 2018-09-26 | 2023-04-12 | 株式会社ジャパンディスプレイ | 表示装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1058310A2 (en) * | 1999-06-02 | 2000-12-06 | Sel Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2001048822A2 (en) * | 1999-12-28 | 2001-07-05 | Sarnoff Corporation | Thin-film transistor circuitry |
WO2001082273A1 (fr) * | 2000-04-21 | 2001-11-01 | Seiko Epson Corporation | Dispositif electro-optique |
CN1379276A (zh) * | 2001-03-30 | 2002-11-13 | 三洋电机株式会社 | 在各像素具备补助电容的动态矩阵型显示装置 |
CN1410962A (zh) * | 2001-09-28 | 2003-04-16 | 三洋电机株式会社 | 动态矩阵型显示装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4925528B2 (ja) * | 2000-09-29 | 2012-04-25 | 三洋電機株式会社 | 表示装置 |
JP3797877B2 (ja) | 2001-02-05 | 2006-07-19 | シャープ株式会社 | アクティブマトリックス駆動型有機led表示装置 |
JP4027614B2 (ja) * | 2001-03-28 | 2007-12-26 | 株式会社日立製作所 | 表示装置 |
JP3612494B2 (ja) * | 2001-03-28 | 2005-01-19 | 株式会社日立製作所 | 表示装置 |
KR100461634B1 (ko) * | 2002-04-15 | 2004-12-14 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광소자와 그 제조방법 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1058310A2 (en) * | 1999-06-02 | 2000-12-06 | Sel Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
WO2001048822A2 (en) * | 1999-12-28 | 2001-07-05 | Sarnoff Corporation | Thin-film transistor circuitry |
WO2001082273A1 (fr) * | 2000-04-21 | 2001-11-01 | Seiko Epson Corporation | Dispositif electro-optique |
CN1379276A (zh) * | 2001-03-30 | 2002-11-13 | 三洋电机株式会社 | 在各像素具备补助电容的动态矩阵型显示装置 |
CN1410962A (zh) * | 2001-09-28 | 2003-04-16 | 三洋电机株式会社 | 动态矩阵型显示装置 |
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KR100689913B1 (ko) | 2007-03-09 |
CN1604169A (zh) | 2005-04-06 |
US20050110421A1 (en) | 2005-05-26 |
JP4446707B2 (ja) | 2010-04-07 |
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US7129937B2 (en) | 2006-10-31 |
JP2005107168A (ja) | 2005-04-21 |
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