CL2021002751A1 - Pulverización catódica con magnetrón rotatorio con campo magnético ajustable individualmente - Google Patents

Pulverización catódica con magnetrón rotatorio con campo magnético ajustable individualmente

Info

Publication number
CL2021002751A1
CL2021002751A1 CL2021002751A CL2021002751A CL2021002751A1 CL 2021002751 A1 CL2021002751 A1 CL 2021002751A1 CL 2021002751 A CL2021002751 A CL 2021002751A CL 2021002751 A CL2021002751 A CL 2021002751A CL 2021002751 A1 CL2021002751 A1 CL 2021002751A1
Authority
CL
Chile
Prior art keywords
magnetron sputtering
magnetic field
individually adjustable
adjustable magnetic
rotating magnetron
Prior art date
Application number
CL2021002751A
Other languages
English (en)
Inventor
Alexander Polle
Dominik Wagner
Original Assignee
Interpane Entw Und Beratungsgesellschaft Mbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interpane Entw Und Beratungsgesellschaft Mbh filed Critical Interpane Entw Und Beratungsgesellschaft Mbh
Publication of CL2021002751A1 publication Critical patent/CL2021002751A1/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/342—Hollow targets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Se proporciona un conjunto de magnetrón (202) para la pulverización catódica de magnetrón con sistemas de cátodo rotatorio. El conjunto de magnetrón (202) comprende una pluralidad de imanes (205) unidos a una pluralidad de yugos (206) y una pluralidad de módulos de accionamiento (207), cada uno de los cuales comprende un mecanismo de accionamiento (208) acoplado operativamente a al menos uno de la pluralidad de yugos (206).
CL2021002751A 2019-04-29 2021-10-20 Pulverización catódica con magnetrón rotatorio con campo magnético ajustable individualmente CL2021002751A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP19171486.4A EP3734643A1 (en) 2019-04-29 2019-04-29 Rotary magnetron sputtering with individually adjustable magnetic field

Publications (1)

Publication Number Publication Date
CL2021002751A1 true CL2021002751A1 (es) 2022-07-01

Family

ID=66323706

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2021002751A CL2021002751A1 (es) 2019-04-29 2021-10-20 Pulverización catódica con magnetrón rotatorio con campo magnético ajustable individualmente

Country Status (7)

Country Link
US (1) US20220028672A1 (es)
EP (2) EP3734643A1 (es)
KR (1) KR20220002299A (es)
CN (1) CN113748486A (es)
CA (1) CA3137359A1 (es)
CL (1) CL2021002751A1 (es)
WO (1) WO2020221557A1 (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115125498A (zh) * 2021-03-24 2022-09-30 株式会社新柯隆 磁控溅射源及其溅射成膜装置
CN114883171A (zh) * 2022-04-27 2022-08-09 北京北方华创微电子装备有限公司 半导体工艺腔室及其上电极结构
CN114774877A (zh) * 2022-05-10 2022-07-22 苏州迈为科技股份有限公司 一种提高旋转靶材利用率的溅射方法及溅射设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8137519B2 (en) * 2008-03-13 2012-03-20 Canon Anelva Corporation Sputtering cathode, sputtering apparatus provided with sputtering cathode, film-forming method, and method for manufacturing electronic device
US9312108B2 (en) 2013-03-01 2016-04-12 Sputtering Components, Inc. Sputtering apparatus
DE102014110001A1 (de) * 2014-07-16 2016-01-21 Von Ardenne Gmbh Magnetron-Anordnung, Verfahren zum Codieren und Übertragen von Information in einer Magnetron-Anordnung und Verwendung einer Magnetron- Anordnung
CN108149209B (zh) * 2017-12-26 2019-12-20 中国科学院电工研究所 一种复合式磁控溅射阴极
EP3734642A1 (en) * 2019-04-29 2020-11-04 INTERPANE Entwicklungs-und Beratungsgesellschaft mbH Method and system for adjustable coating using magnetron sputtering systems

Also Published As

Publication number Publication date
WO2020221557A1 (en) 2020-11-05
EP3734643A1 (en) 2020-11-04
EP3963621A1 (en) 2022-03-09
CA3137359A1 (en) 2020-11-05
KR20220002299A (ko) 2022-01-06
CN113748486A (zh) 2021-12-03
EP3963621B1 (en) 2024-03-06
US20220028672A1 (en) 2022-01-27

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