CL2020000647A1 - Escritura persistente para memoria no volátil. - Google Patents

Escritura persistente para memoria no volátil.

Info

Publication number
CL2020000647A1
CL2020000647A1 CL2020000647A CL2020000647A CL2020000647A1 CL 2020000647 A1 CL2020000647 A1 CL 2020000647A1 CL 2020000647 A CL2020000647 A CL 2020000647A CL 2020000647 A CL2020000647 A CL 2020000647A CL 2020000647 A1 CL2020000647 A1 CL 2020000647A1
Authority
CL
Chile
Prior art keywords
persistent
memory system
volatile memory
server
command
Prior art date
Application number
CL2020000647A
Other languages
English (en)
Spanish (es)
Inventor
Kuljit Singh Bains
Liyong Wang
Wesley Queen
Raj Ramanujan
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CL2020000647A1 publication Critical patent/CL2020000647A1/es

Links

Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0673—Single storage device
    • G06F3/068—Hybrid storage device
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14—Error detection or correction of the data by redundancy in operation
    • G06F11/1402—Saving, restoring, recovering or retrying
    • G06F11/1471—Saving, restoring, recovering or retrying involving logging of persistent data for recovery
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0804—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with main memory updating
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0862—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches with prefetch
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0866—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches for peripheral storage systems, e.g. disk cache
    • G06F12/0868—Data transfer between cache memory and other subsystems, e.g. storage devices or host systems
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/20—Employing a main memory using a specific memory technology
    • G06F2212/202—Non-volatile memory
    • G06F2212/2024—Rewritable memory not requiring erasing, e.g. resistive or ferroelectric RAM
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7203—Temporary buffering, e.g. using volatile buffer or dedicated buffer blocks

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Quality & Reliability (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • Solid-Sorbent Or Filter-Aiding Compositions (AREA)
  • Memory System (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Retry When Errors Occur (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
CL2020000647A 2017-09-15 2020-03-12 Escritura persistente para memoria no volátil. CL2020000647A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15/706,530 US11194524B2 (en) 2017-09-15 2017-09-15 Apparatus and method for performing persistent write operations using a persistent write command

Publications (1)

Publication Number Publication Date
CL2020000647A1 true CL2020000647A1 (es) 2020-08-28

Family

ID=63449690

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2020000647A CL2020000647A1 (es) 2017-09-15 2020-03-12 Escritura persistente para memoria no volátil.

Country Status (24)

Country Link
US (2) US11194524B2 (enExample)
EP (1) EP3682331B1 (enExample)
JP (1) JP7123129B2 (enExample)
KR (1) KR102425287B1 (enExample)
CN (1) CN111095224B (enExample)
AU (1) AU2018334452B2 (enExample)
CA (1) CA3073686C (enExample)
CL (1) CL2020000647A1 (enExample)
CO (1) CO2020002863A2 (enExample)
DK (1) DK3682331T3 (enExample)
ES (1) ES2971138T3 (enExample)
FI (1) FI3682331T3 (enExample)
HU (1) HUE065310T2 (enExample)
IL (1) IL272795B (enExample)
MX (1) MX2020002897A (enExample)
MY (1) MY203256A (enExample)
NZ (1) NZ761924A (enExample)
PH (1) PH12020500384A1 (enExample)
PT (1) PT3682331T (enExample)
SA (1) SA520411521B1 (enExample)
SG (1) SG11202001491YA (enExample)
SI (1) SI3682331T1 (enExample)
TW (1) TWI779082B (enExample)
WO (1) WO2019055164A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10534540B2 (en) * 2016-06-06 2020-01-14 Micron Technology, Inc. Memory protocol
US11194524B2 (en) 2017-09-15 2021-12-07 Qualcomm Incorporated Apparatus and method for performing persistent write operations using a persistent write command
US10996888B2 (en) * 2017-10-31 2021-05-04 Qualcomm Incorporated Write credits management for non-volatile memory
KR102426107B1 (ko) * 2017-12-20 2022-07-28 에스케이하이닉스 주식회사 메모리 시스템 및 그것의 동작 방법
KR20190088790A (ko) * 2018-01-19 2019-07-29 에스케이하이닉스 주식회사 메모리 시스템 및 그것의 동작 방법
US11048645B2 (en) * 2018-02-01 2021-06-29 Samsung Electronics Co., Ltd. Memory module, operation method therof, and operation method of host
US10990321B2 (en) * 2019-02-20 2021-04-27 Micron Technology, Inc. Memory sub-system for supporting deterministic and non-deterministic commands based on command expiration and the state of the intermediate command queue
US11709774B2 (en) * 2019-08-07 2023-07-25 Intel Corporation Data consistency and durability over distributed persistent memory systems
US11656967B2 (en) * 2020-02-13 2023-05-23 MemRay Corporation Method and apparatus for supporting persistence and computing device
US11886744B2 (en) * 2021-12-15 2024-01-30 Nvidia Corporation Systems, methods, and apparatuses for making writes to persistent memory

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CN1326562A (zh) 1998-10-02 2001-12-12 世界空间管理公司 用于为用户提供积极和被动访问高速缓存内容的系统
US7139885B2 (en) 2001-12-27 2006-11-21 Hitachi, Ltd. Method and apparatus for managing storage based replication
US7139864B2 (en) 2003-12-30 2006-11-21 Sandisk Corporation Non-volatile memory and method with block management system
US8250329B2 (en) * 2007-10-24 2012-08-21 International Business Machines Corporation Preemptive write-inhibition for thin provisioning storage subsystem
US7930361B2 (en) 2008-09-15 2011-04-19 Dell Products L.P. System and method for management of remotely shared data
US8700842B2 (en) * 2010-04-12 2014-04-15 Sandisk Enterprise Ip Llc Minimizing write operations to a flash memory-based object store
US20130138915A1 (en) * 2010-08-11 2013-05-30 Nec Corporation Data processing system, data processing method, and program
US10817421B2 (en) * 2010-12-13 2020-10-27 Sandisk Technologies Llc Persistent data structures
US8656130B2 (en) * 2011-12-23 2014-02-18 International Business Machines Corporation Low latency and persistent data storage
US10102170B2 (en) * 2012-05-18 2018-10-16 Dell Products, Lp System and method for providing input/output functionality by an I/O complex switch
US9081606B2 (en) * 2012-11-13 2015-07-14 International Business Machines Corporation Asynchronous persistent stores for transactions
US9501398B2 (en) * 2012-12-26 2016-11-22 Sandisk Technologies Llc Persistent storage device with NVRAM for staging writes
CN105283857B (zh) 2013-03-14 2018-09-11 慧与发展有限责任合伙企业 用于持久性存储器的多版本化非易失性存储器层级
US9477557B2 (en) * 2013-03-28 2016-10-25 Microsoft Technology Licensing, Llc Transaction processing using torn write detection
RU2623801C1 (ru) 2013-07-26 2017-06-29 Интел Корпорейшн Интерфейс энергонезависимой памяти
US9389976B2 (en) 2014-04-09 2016-07-12 Intel Corporation Distributed persistent memory using asynchronous streaming of log records
US10061719B2 (en) * 2014-12-25 2018-08-28 Intel Corporation Packed write completions
US9886194B2 (en) * 2015-07-13 2018-02-06 Samsung Electronics Co., Ltd. NVDIMM adaptive access mode and smart partition mechanism
US9946492B2 (en) * 2015-10-30 2018-04-17 Arm Limited Controlling persistent writes to non-volatile memory based on persist buffer data and a persist barrier within a sequence of program instructions
US10719236B2 (en) 2015-11-20 2020-07-21 Arm Ltd. Memory controller with non-volatile buffer for persistent memory operations
US10691553B2 (en) 2015-12-16 2020-06-23 Netapp, Inc. Persistent memory based distributed-journal file system
US10970175B2 (en) * 2016-06-15 2021-04-06 Sap Se Flexible per-request data durability in databases and other data stores
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US11175853B2 (en) * 2017-05-09 2021-11-16 Samsung Electronics Co., Ltd. Systems and methods for write and flush support in hybrid memory
CN109729730B (zh) * 2017-08-31 2020-09-04 华为技术有限公司 写入信息的方法和装置
US11194524B2 (en) 2017-09-15 2021-12-07 Qualcomm Incorporated Apparatus and method for performing persistent write operations using a persistent write command
US11016669B2 (en) * 2018-05-01 2021-05-25 Qualcomm Incorporated Persistent write data for energy-backed memory

Also Published As

Publication number Publication date
MY203256A (en) 2024-06-20
WO2019055164A1 (en) 2019-03-21
HUE065310T2 (hu) 2024-05-28
US20220050600A1 (en) 2022-02-17
TW201933106A (zh) 2019-08-16
US20190087096A1 (en) 2019-03-21
SA520411521B1 (ar) 2022-08-02
FI3682331T3 (fi) 2024-01-25
CA3073686C (en) 2023-10-03
JP2020534598A (ja) 2020-11-26
PH12020500384A1 (en) 2020-12-07
NZ761924A (en) 2022-05-27
SI3682331T1 (sl) 2024-03-29
AU2018334452B2 (en) 2023-03-16
US11194524B2 (en) 2021-12-07
US11650765B2 (en) 2023-05-16
AU2018334452A1 (en) 2020-03-19
RU2020110130A3 (enExample) 2022-03-29
KR20200051624A (ko) 2020-05-13
DK3682331T3 (da) 2024-01-29
CN111095224A (zh) 2020-05-01
CN111095224B (zh) 2023-11-14
IL272795A (en) 2020-04-30
CA3073686A1 (en) 2019-03-21
EP3682331A1 (en) 2020-07-22
ES2971138T3 (es) 2024-06-03
RU2020110130A (ru) 2021-10-15
CO2020002863A2 (es) 2020-04-13
BR112020004936A2 (pt) 2020-09-15
IL272795B (en) 2022-08-01
KR102425287B1 (ko) 2022-07-25
SG11202001491YA (en) 2020-03-30
JP7123129B2 (ja) 2022-08-22
EP3682331B1 (en) 2023-12-27
MX2020002897A (es) 2020-07-22
TWI779082B (zh) 2022-10-01
PT3682331T (pt) 2024-01-26

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