CL2013003717A1 - Dispositivo para la transformacion de energia solar concentrada que comprende un dispositivo laser que comprende a su vez: un medio activo para la absorcion total o parcial del espectro solar, un primer espejo reflectante, un segundo espejo reflectante, un primer revestimiento del nucleo, un segundo revestimiento, donde en el dispositivo laser el medio activo es un nucleo que contiene una seccion dopada, el primer espejo reflectante es transparente con sustancias capaces de absorber el espectro solar. - Google Patents

Dispositivo para la transformacion de energia solar concentrada que comprende un dispositivo laser que comprende a su vez: un medio activo para la absorcion total o parcial del espectro solar, un primer espejo reflectante, un segundo espejo reflectante, un primer revestimiento del nucleo, un segundo revestimiento, donde en el dispositivo laser el medio activo es un nucleo que contiene una seccion dopada, el primer espejo reflectante es transparente con sustancias capaces de absorber el espectro solar.

Info

Publication number
CL2013003717A1
CL2013003717A1 CL2013003717A CL2013003717A CL2013003717A1 CL 2013003717 A1 CL2013003717 A1 CL 2013003717A1 CL 2013003717 A CL2013003717 A CL 2013003717A CL 2013003717 A CL2013003717 A CL 2013003717A CL 2013003717 A1 CL2013003717 A1 CL 2013003717A1
Authority
CL
Chile
Prior art keywords
reflective mirror
laser device
coating
solar spectrum
nucleus
Prior art date
Application number
CL2013003717A
Other languages
English (en)
Inventor
Bootello Juan Pablo Nuñez
Torreira Manuel Gallas
Original Assignee
Abengoa Solar New Tech Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abengoa Solar New Tech Sa filed Critical Abengoa Solar New Tech Sa
Publication of CL2013003717A1 publication Critical patent/CL2013003717A1/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
    • H01S3/06729—Peculiar transverse fibre profile
    • H01S3/06741—Photonic crystal fibre, i.e. the fibre having a photonic bandgap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/0915—Processes or apparatus for excitation, e.g. pumping using optical pumping by incoherent light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • G02B6/02295—Microstructured optical fibre
    • G02B6/02314—Plurality of longitudinal structures extending along optical fibre axis, e.g. holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/005—Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06704—Housings; Packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
CL2013003717A 2011-07-05 2013-12-26 Dispositivo para la transformacion de energia solar concentrada que comprende un dispositivo laser que comprende a su vez: un medio activo para la absorcion total o parcial del espectro solar, un primer espejo reflectante, un segundo espejo reflectante, un primer revestimiento del nucleo, un segundo revestimiento, donde en el dispositivo laser el medio activo es un nucleo que contiene una seccion dopada, el primer espejo reflectante es transparente con sustancias capaces de absorber el espectro solar. CL2013003717A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
ES201131140A ES2396109B1 (es) 2011-07-05 2011-07-05 Dispositivo para la transformación de energía solar concentrada.

Publications (1)

Publication Number Publication Date
CL2013003717A1 true CL2013003717A1 (es) 2014-08-08

Family

ID=47436563

Family Applications (1)

Application Number Title Priority Date Filing Date
CL2013003717A CL2013003717A1 (es) 2011-07-05 2013-12-26 Dispositivo para la transformacion de energia solar concentrada que comprende un dispositivo laser que comprende a su vez: un medio activo para la absorcion total o parcial del espectro solar, un primer espejo reflectante, un segundo espejo reflectante, un primer revestimiento del nucleo, un segundo revestimiento, donde en el dispositivo laser el medio activo es un nucleo que contiene una seccion dopada, el primer espejo reflectante es transparente con sustancias capaces de absorber el espectro solar.

Country Status (8)

Country Link
US (1) US8937983B2 (es)
EP (1) EP2731209A4 (es)
CN (1) CN103797663A (es)
CL (1) CL2013003717A1 (es)
ES (1) ES2396109B1 (es)
MX (1) MX2014000164A (es)
WO (1) WO2013004868A1 (es)
ZA (1) ZA201400206B (es)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105099358B (zh) * 2015-07-28 2018-06-05 深圳扑浪创新科技有限公司 一种量子点掺杂型太阳能荧光聚光发电系统的制造方法
US11038073B2 (en) * 2018-07-02 2021-06-15 Suk Man BAE Solar power generation unit and system
US11604323B2 (en) 2020-05-21 2023-03-14 Saudi Arabian Oil Company Methods to harvest electromagnetic energy during subsurface high power laser transmission

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2414209A1 (de) * 1974-03-25 1975-10-09 Max Planck Gesellschaft Laseranordnung fuer hochdotierte optische verstaerkerelemente, insbesondere aus ultraphosphatbasis
US4281294A (en) * 1979-04-16 1981-07-28 Volkin Howard C Direct solar pumped laser
DE59207440D1 (de) * 1991-05-31 1996-11-28 Sel Alcatel Ag Optisch steuerbarer halbleiterlaser
US5428634A (en) * 1992-11-05 1995-06-27 The United States Of America As Represented By The United States Department Of Energy Visible light emitting vertical cavity surface emitting lasers
GB2371405B (en) 2001-01-23 2003-10-15 Univ Glasgow Improvements in or relating to semiconductor lasers
JP2005039162A (ja) * 2003-07-18 2005-02-10 Etsuo Fujiwara レーザーパワー給電装置
US7715455B2 (en) * 2005-03-18 2010-05-11 Tokyo Institute Of Technology Solar light pumped laser and cooling method of solar light pumped laser
JP2008103389A (ja) * 2006-10-17 2008-05-01 Kawasaki Heavy Ind Ltd アクティブミラー構造体
US20080158864A1 (en) * 2006-12-28 2008-07-03 Higher Way Electronic Co., Ltd. Monolithic photo-chip with solar device and light-emitting device and manufacturing method thereof
CN201018430Y (zh) 2007-03-21 2008-02-06 万志强 太阳能聚光激光发电装置
CN101237196A (zh) 2007-10-10 2008-08-06 万志强 太阳能聚光激光发电装置
JP2011023377A (ja) * 2008-04-17 2011-02-03 Takashi Yabe 太陽光励起のレーザー発振装置

Also Published As

Publication number Publication date
CN103797663A (zh) 2014-05-14
US20140153604A1 (en) 2014-06-05
WO2013004868A1 (es) 2013-01-10
EP2731209A1 (en) 2014-05-14
MX2014000164A (es) 2014-05-14
ZA201400206B (en) 2014-10-29
US8937983B2 (en) 2015-01-20
ES2396109B1 (es) 2013-12-27
EP2731209A4 (en) 2015-07-08
ES2396109A1 (es) 2013-02-19

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