CH600578A5 - - Google Patents

Info

Publication number
CH600578A5
CH600578A5 CH1208274A CH1208274A CH600578A5 CH 600578 A5 CH600578 A5 CH 600578A5 CH 1208274 A CH1208274 A CH 1208274A CH 1208274 A CH1208274 A CH 1208274A CH 600578 A5 CH600578 A5 CH 600578A5
Authority
CH
Switzerland
Application number
CH1208274A
Inventor
Francis Porret
Original Assignee
Centre Electron Horloger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Electron Horloger filed Critical Centre Electron Horloger
Priority to CH1208274A priority Critical patent/CH600578A5/xx
Priority to US05/607,922 priority patent/US4038580A/en
Priority to DE2538248A priority patent/DE2538248B2/de
Priority to JP10755975A priority patent/JPS5152290A/ja
Publication of CH600578A5 publication Critical patent/CH600578A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
CH1208274A 1974-09-05 1974-09-05 CH600578A5 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CH1208274A CH600578A5 (fr) 1974-09-05 1974-09-05
US05/607,922 US4038580A (en) 1974-09-05 1975-08-26 Electro-luminescent diode
DE2538248A DE2538248B2 (de) 1974-09-05 1975-08-28 Elektrolumineszenz-Diode und Verfahren zu ihrer Herstellung
JP10755975A JPS5152290A (fr) 1974-09-05 1975-09-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1208274A CH600578A5 (fr) 1974-09-05 1974-09-05

Publications (1)

Publication Number Publication Date
CH600578A5 true CH600578A5 (fr) 1978-06-15

Family

ID=4379672

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1208274A CH600578A5 (fr) 1974-09-05 1974-09-05

Country Status (4)

Country Link
US (1) US4038580A (fr)
JP (1) JPS5152290A (fr)
CH (1) CH600578A5 (fr)
DE (1) DE2538248B2 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5376692A (en) * 1976-12-18 1978-07-07 Mitsubishi Electric Corp Semiconductor light emitting device
DE2755433C2 (de) * 1977-12-13 1986-09-25 Telefunken electronic GmbH, 7100 Heilbronn Strahlungsemittierende Halbleiterdiode
JPS6038036B2 (ja) * 1979-04-23 1985-08-29 松下電器産業株式会社 電場発光素子
DE2949245A1 (de) * 1979-12-07 1981-06-11 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Lichtemittierende diode
US4782028A (en) * 1987-08-27 1988-11-01 Santa Barbara Research Center Process methodology for two-sided fabrication of devices on thinned silicon
US5633176A (en) * 1992-08-19 1997-05-27 Seiko Instruments Inc. Method of producing a semiconductor device for a light valve
JP3526058B2 (ja) 1992-08-19 2004-05-10 セイコーインスツルメンツ株式会社 光弁用半導体装置
US6177969B1 (en) * 1997-03-21 2001-01-23 Canon Kabushiki Kaisha Matrix substrate and liquid crystal display device utilizing the same in which a conductive film in an aperture region opposes the side the switching elements are on
US6429460B1 (en) 2000-09-28 2002-08-06 United Epitaxy Company, Ltd. Highly luminous light emitting device
DE10054966A1 (de) 2000-11-06 2002-05-16 Osram Opto Semiconductors Gmbh Bauelement für die Optoelektronik
US6657237B2 (en) * 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
JP3910817B2 (ja) * 2000-12-19 2007-04-25 ユーディナデバイス株式会社 半導体受光装置
US7233028B2 (en) * 2001-02-23 2007-06-19 Nitronex Corporation Gallium nitride material devices and methods of forming the same
CN105940505A (zh) * 2014-02-06 2016-09-14 皇家飞利浦有限公司 具有结构化衬底的发光二极管

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3283207A (en) * 1963-05-27 1966-11-01 Ibm Light-emitting transistor system
US3667117A (en) * 1969-02-28 1972-06-06 Corning Glass Works Electroluminescent diode configuration and method of forming the same
JPS5310840B2 (fr) * 1972-05-04 1978-04-17
JPS5114439B2 (fr) * 1972-05-15 1976-05-10
US3774021A (en) * 1972-05-25 1973-11-20 Bell Telephone Labor Inc Light emitting device
US3780357A (en) * 1973-02-16 1973-12-18 Hewlett Packard Co Electroluminescent semiconductor display apparatus and method of fabricating the same
US3936855A (en) * 1974-08-08 1976-02-03 International Telephone And Telegraph Corporation Light-emitting diode fabrication process

Also Published As

Publication number Publication date
JPS5152290A (fr) 1976-05-08
DE2538248B2 (de) 1978-09-21
US4038580A (en) 1977-07-26
DE2538248A1 (de) 1976-03-25

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Legal Events

Date Code Title Description
PL Patent ceased