CH598695A5 - - Google Patents

Info

Publication number
CH598695A5
CH598695A5 CH12676A CH12676A CH598695A5 CH 598695 A5 CH598695 A5 CH 598695A5 CH 12676 A CH12676 A CH 12676A CH 12676 A CH12676 A CH 12676A CH 598695 A5 CH598695 A5 CH 598695A5
Authority
CH
Switzerland
Application number
CH12676A
Inventor
Alfred Charles Ipri
John Carl Sarace
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of CH598695A5 publication Critical patent/CH598695A5/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)
CH12676A 1975-01-13 1976-01-07 CH598695A5 (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54044375A 1975-01-13 1975-01-13

Publications (1)

Publication Number Publication Date
CH598695A5 true CH598695A5 (sv) 1978-05-12

Family

ID=24155496

Family Applications (1)

Application Number Title Priority Date Filing Date
CH12676A CH598695A5 (sv) 1975-01-13 1976-01-07

Country Status (11)

Country Link
JP (1) JPS5346701B2 (sv)
BE (1) BE837382A (sv)
CA (1) CA1040320A (sv)
CH (1) CH598695A5 (sv)
DE (1) DE2600221B2 (sv)
FR (1) FR2297496A1 (sv)
GB (1) GB1509949A (sv)
IN (1) IN144889B (sv)
IT (1) IT1049016B (sv)
NL (1) NL7600259A (sv)
SE (1) SE408508B (sv)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3219441A1 (de) * 1981-05-25 1982-12-16 Mitsubishi Denki K.K., Tokyo Verfahren zur herstellung von halbleitervorrichtungen

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7282409B2 (en) * 2004-06-23 2007-10-16 Micron Technology, Inc. Isolation structure for a memory cell using Al2O3 dielectric
JP2011119397A (ja) * 2009-12-02 2011-06-16 Canon Inc 半導体装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3219441A1 (de) * 1981-05-25 1982-12-16 Mitsubishi Denki K.K., Tokyo Verfahren zur herstellung von halbleitervorrichtungen
DE3219441C2 (sv) * 1981-05-25 1989-07-20 Mitsubishi Denki K.K., Tokio/Tokyo, Jp

Also Published As

Publication number Publication date
SE7600122L (sv) 1976-07-14
BE837382A (nl) 1976-05-03
CA1040320A (en) 1978-10-10
SE408508B (sv) 1979-06-11
JPS5195785A (sv) 1976-08-21
DE2600221A1 (de) 1976-07-15
DE2600221B2 (de) 1978-09-07
FR2297496A1 (fr) 1976-08-06
IT1049016B (it) 1981-01-20
IN144889B (sv) 1978-07-22
GB1509949A (en) 1978-05-10
JPS5346701B2 (sv) 1978-12-15
NL7600259A (nl) 1976-07-15

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Legal Events

Date Code Title Description
PL Patent ceased