CH584966A5 - - Google Patents
Info
- Publication number
- CH584966A5 CH584966A5 CH1558674A CH1558674A CH584966A5 CH 584966 A5 CH584966 A5 CH 584966A5 CH 1558674 A CH1558674 A CH 1558674A CH 1558674 A CH1558674 A CH 1558674A CH 584966 A5 CH584966 A5 CH 584966A5
- Authority
- CH
- Switzerland
- Prior art keywords
- chromium
- alloy
- pages
- vol
- interval
- Prior art date
Links
- 239000000463 material Substances 0.000 claims description 13
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 10
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 239000011572 manganese Substances 0.000 claims description 6
- 229910000914 Mn alloy Inorganic materials 0.000 claims description 5
- 230000005298 paramagnetic effect Effects 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 2
- XCNJCXWPYFLAGR-UHFFFAOYSA-N chromium manganese Chemical compound [Cr].[Mn].[Mn].[Mn] XCNJCXWPYFLAGR-UHFFFAOYSA-N 0.000 claims description 2
- HBXWYZMULLEJSG-UHFFFAOYSA-N chromium vanadium Chemical compound [V][Cr][V][Cr] HBXWYZMULLEJSG-UHFFFAOYSA-N 0.000 claims description 2
- 239000003381 stabilizer Substances 0.000 claims description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000005291 magnetic effect Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 238000000844 transformation Methods 0.000 description 2
- 108010053481 Antifreeze Proteins Proteins 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005307 ferromagnetism Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021652 non-ferrous alloy Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- XOFYZVNMUHMLCC-ZPOLXVRWSA-N prednisone Chemical compound O=C1C=C[C@]2(C)[C@H]3C(=O)C[C@](C)([C@@](CC4)(O)C(=O)CO)[C@@H]4[C@@H]3CCC2=C1 XOFYZVNMUHMLCC-ZPOLXVRWSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T83/00—Cutting
- Y10T83/202—With product handling means
- Y10T83/2092—Means to move, guide, or permit free fall or flight of product
- Y10T83/2183—Product mover including gripper means
- Y10T83/2185—Suction gripper
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Folding Of Thin Sheet-Like Materials, Special Discharging Devices, And Others (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Die Bonding (AREA)
- Soft Magnetic Materials (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5464473A GB1449212A (en) | 1973-11-24 | 1973-11-24 | Manufacture of supports for semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH584966A5 true CH584966A5 (de) | 1977-02-15 |
Family
ID=10471663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1558674A CH584966A5 (de) | 1973-11-24 | 1974-11-22 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3958742A (de) |
| JP (1) | JPS5342667B2 (de) |
| CH (1) | CH584966A5 (de) |
| DE (1) | DE2454578B2 (de) |
| GB (1) | GB1449212A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4181249A (en) * | 1977-08-26 | 1980-01-01 | Hughes Aircraft Company | Eutectic die attachment method for integrated circuits |
| JPS5568025U (de) * | 1978-11-02 | 1980-05-10 | ||
| US4944446A (en) * | 1989-11-02 | 1990-07-31 | Micron Technology, Inc. | Automatic preform dispenser |
| CN114453773B (zh) * | 2022-04-12 | 2022-06-24 | 广州志橙半导体有限公司 | 一种碳化硅晶圆激光切割设备 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1589176A (en) * | 1924-06-24 | 1926-06-15 | William Hubbard And Fred A Ray | Attachment for dieing-out machines |
| NL229943A (de) * | 1957-08-01 | |||
| US3585711A (en) * | 1968-09-06 | 1971-06-22 | Us Navy | Gold-silicon bonding process |
| US3667331A (en) * | 1969-02-20 | 1972-06-06 | Sylvania Electric Prod | Apparatus for cutting, transferring and depositing self-supporting strip material |
-
1973
- 1973-11-24 GB GB5464473A patent/GB1449212A/en not_active Expired
-
1974
- 1974-11-18 DE DE2454578A patent/DE2454578B2/de not_active Withdrawn
- 1974-11-19 US US05/525,201 patent/US3958742A/en not_active Expired - Lifetime
- 1974-11-22 CH CH1558674A patent/CH584966A5/fr not_active IP Right Cessation
- 1974-11-22 JP JP13375174A patent/JPS5342667B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2454578A1 (de) | 1975-06-19 |
| JPS5342667B2 (de) | 1978-11-14 |
| JPS5086275A (de) | 1975-07-11 |
| US3958742A (en) | 1976-05-25 |
| DE2454578B2 (de) | 1980-08-28 |
| GB1449212A (en) | 1976-09-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Fawcett | Spin-density-wave antiferromagnetism in chromium | |
| Craciunescu et al. | Martensitic transformation in Co2NiGa ferromagnetic shape memory alloys | |
| Asano et al. | Magnetism and crystal structure of Laves phase compounds | |
| Ren et al. | Understanding the martensitic transformations in TiNi-based alloys by elastic constants measurement | |
| Liu et al. | Martensitic transformation and magnetic properties in Ni–Fe–Ga–Co magnetic shape memory alloys | |
| JP2004037240A (ja) | 磁歪式トルクセンサシャフトおよびその製造方法 | |
| Heczko et al. | Temperature dependence of elastic properties in austenite and martensite of Ni-Mn-Ga epitaxial films | |
| CH584966A5 (de) | ||
| Lockwood et al. | One-and two-magnon excitations in NiO | |
| Azcoı̈tia et al. | Magnetomechanical damping in Fe–Cr alloys and effect of Al and Mo addition | |
| Umetsu et al. | Effects of the antiferromagnetic anti-phase domain boundary on the magnetization processes in Ni2Mn (Ga0. 5Al0. 5) Heusler alloy | |
| Hirose et al. | Perpendicular magnetic anisotropy in ferrimagnetic Mn4N films grown on (LaAlO3) 0.3 (Sr2TaAlO6) 0.7 (0 0 1) substrates by molecular beam epitaxy | |
| Yamada et al. | Negative mode-mode coupling among spin fluctuations and the magneto-volume effect in an itinerant-electron ferromagnet | |
| Pathak et al. | The effect of partial substitution of In by X= Si, Ge and Al on the crystal structure, magnetic properties and resistivity of Ni50Mn35In15 Heusler alloys | |
| Sharma et al. | Temperature and magnetic field induced strain in Ni50Mn34In16 alloy | |
| Ghebouli et al. | Structural and magnetic properties of evaporated Fe thin films on Si (1 1 1), Si (1 0 0) and glass substrates | |
| CH488244A (fr) | Elément thermocompensé pour dispositif élasto-mécanique | |
| Wang et al. | Annealing and thickness effects on magnetic properties of Co2FeAl alloy films | |
| Van Petegem et al. | Yield point phenomenon during strain rate change in nanocrystalline Ni–Fe | |
| Yamasaki et al. | Nearly antiferromagnetic metal with linear spin chains: LaMn4Al8 | |
| Chernenko et al. | Effect of high hydrostatic pressure on premartensitic transition in Ni2MnGa | |
| Czaja et al. | Mechanical response during bending of Ni–Mn–Ga-based melt-spun ribbons | |
| Rao et al. | Phase coexistence, microstructure and magnetism in Ni–Mn–Sb alloys | |
| CH501954A (fr) | Spiral de montre de coefficient thermique nul | |
| Matsumoto et al. | Continuous evolution of Fermi surface properties above metamagnetic transitions in CexLa1− xRu2Si2 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |