CH579827A5 - - Google Patents

Info

Publication number
CH579827A5
CH579827A5 CH1471874A CH1471874A CH579827A5 CH 579827 A5 CH579827 A5 CH 579827A5 CH 1471874 A CH1471874 A CH 1471874A CH 1471874 A CH1471874 A CH 1471874A CH 579827 A5 CH579827 A5 CH 579827A5
Authority
CH
Switzerland
Application number
CH1471874A
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH1471874A priority Critical patent/CH579827A5/xx
Priority to DE19742456438 priority patent/DE2456438A1/de
Priority to JP50131340A priority patent/JPS5168765A/ja
Priority to FR7533448A priority patent/FR2290035A1/fr
Priority to US05/628,842 priority patent/US4046608A/en
Publication of CH579827A5 publication Critical patent/CH579827A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
CH1471874A 1974-11-04 1974-11-04 CH579827A5 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CH1471874A CH579827A5 (ja) 1974-11-04 1974-11-04
DE19742456438 DE2456438A1 (de) 1974-11-04 1974-11-29 Verfahren zur herstellung von halbleiterbauelementen
JP50131340A JPS5168765A (en) 1974-11-04 1975-10-31 Handotaisoshino seizoho
FR7533448A FR2290035A1 (fr) 1974-11-04 1975-10-31 Procede de production de composants a semi-conducteurs
US05/628,842 US4046608A (en) 1974-11-04 1975-11-04 Method of producing semiconductor components and product thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1471874A CH579827A5 (ja) 1974-11-04 1974-11-04

Publications (1)

Publication Number Publication Date
CH579827A5 true CH579827A5 (ja) 1976-09-15

Family

ID=4403272

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1471874A CH579827A5 (ja) 1974-11-04 1974-11-04

Country Status (5)

Country Link
US (1) US4046608A (ja)
JP (1) JPS5168765A (ja)
CH (1) CH579827A5 (ja)
DE (1) DE2456438A1 (ja)
FR (1) FR2290035A1 (ja)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4138280A (en) * 1978-02-02 1979-02-06 International Rectifier Corporation Method of manufacture of zener diodes
US4278476A (en) * 1979-12-05 1981-07-14 Westinghouse Electric Corp. Method of making ion implanted reverse-conducting thyristor
JP3562588B2 (ja) * 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
US6997985B1 (en) 1993-02-15 2006-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JP3193803B2 (ja) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法
CN102117839B (zh) * 2010-01-05 2013-07-24 比亚迪股份有限公司 一种包含pn结的半导体电子器件

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2827436A (en) * 1956-01-16 1958-03-18 Bell Telephone Labor Inc Method of improving the minority carrier lifetime in a single crystal silicon body
NL296231A (ja) * 1962-08-03
US3356543A (en) * 1964-12-07 1967-12-05 Rca Corp Method of decreasing the minority carrier lifetime by diffusion
DE1816082A1 (de) * 1968-12-20 1970-06-25 Siemens Ag Verfahren zum Herstellen von diffundierten Halbleiterbauelementen aus Silicium
US3914138A (en) * 1974-08-16 1975-10-21 Westinghouse Electric Corp Method of making semiconductor devices by single step diffusion

Also Published As

Publication number Publication date
FR2290035A1 (fr) 1976-05-28
FR2290035B1 (ja) 1979-07-06
JPS5168765A (en) 1976-06-14
US4046608A (en) 1977-09-06
DE2456438A1 (de) 1976-05-06

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Legal Events

Date Code Title Description
PL Patent ceased
PL Patent ceased