CH572985A5 - - Google Patents

Info

Publication number
CH572985A5
CH572985A5 CH1801771A CH1801771A CH572985A5 CH 572985 A5 CH572985 A5 CH 572985A5 CH 1801771 A CH1801771 A CH 1801771A CH 1801771 A CH1801771 A CH 1801771A CH 572985 A5 CH572985 A5 CH 572985A5
Authority
CH
Switzerland
Application number
CH1801771A
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Priority to CH1801771A priority Critical patent/CH572985A5/xx
Priority to FR7240425A priority patent/FR2162373B1/fr
Priority to DE2255508A priority patent/DE2255508A1/de
Priority to GB5366772A priority patent/GB1372610A/en
Priority to JP47119485A priority patent/JPS4866773A/ja
Publication of CH572985A5 publication Critical patent/CH572985A5/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
CH1801771A 1971-12-10 1971-12-10 CH572985A5 (enExample)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CH1801771A CH572985A5 (enExample) 1971-12-10 1971-12-10
FR7240425A FR2162373B1 (enExample) 1971-12-10 1972-11-08
DE2255508A DE2255508A1 (de) 1971-12-10 1972-11-13 Verfahren zum epitaktischen aufwachsen einer duennen, gut leitenden halbleiterschicht
GB5366772A GB1372610A (en) 1971-12-10 1972-11-21 Field effect transistor
JP47119485A JPS4866773A (enExample) 1971-12-10 1972-11-30

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1801771A CH572985A5 (enExample) 1971-12-10 1971-12-10

Publications (1)

Publication Number Publication Date
CH572985A5 true CH572985A5 (enExample) 1976-02-27

Family

ID=4429804

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1801771A CH572985A5 (enExample) 1971-12-10 1971-12-10

Country Status (5)

Country Link
JP (1) JPS4866773A (enExample)
CH (1) CH572985A5 (enExample)
DE (1) DE2255508A1 (enExample)
FR (1) FR2162373B1 (enExample)
GB (1) GB1372610A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5154366A (ja) * 1974-11-06 1976-05-13 Mitsubishi Electric Corp Handotaiepitakishiaruehaa
JPS5264272A (en) * 1975-11-22 1977-05-27 Fujitsu Ltd Semiconductor crystal
FR2447612A1 (fr) * 1979-01-26 1980-08-22 Thomson Csf Composant semi-conducteur a heterojonction
JPS61158185A (ja) * 1984-12-28 1986-07-17 Hosiden Electronics Co Ltd 薄膜トランジスタ
JP2762919B2 (ja) * 1994-03-24 1998-06-11 日本電気株式会社 半導体素子

Also Published As

Publication number Publication date
GB1372610A (en) 1974-10-30
FR2162373A1 (enExample) 1973-07-20
DE2255508A1 (de) 1973-06-20
FR2162373B1 (enExample) 1978-03-03
JPS4866773A (enExample) 1973-09-12

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Legal Events

Date Code Title Description
PL Patent ceased
PL Patent ceased