CH560463A5 - - Google Patents
Info
- Publication number
- CH560463A5 CH560463A5 CH1098873A CH1098873A CH560463A5 CH 560463 A5 CH560463 A5 CH 560463A5 CH 1098873 A CH1098873 A CH 1098873A CH 1098873 A CH1098873 A CH 1098873A CH 560463 A5 CH560463 A5 CH 560463A5
- Authority
- CH
- Switzerland
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722247183 DE2247183C3 (de) | 1972-09-26 | Verfahren zur Herstellung von Schaltungen mit wenigstens einem Feldeffekttransistor mit einer Source-, einer Drain- und einer Gateelektrode und mit mindestens einem ohmschen > Schichtwiderstand auf einem gemeinsamen Substrat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH560463A5 true CH560463A5 (US07847105-20101207-C00016.png) | 1975-03-27 |
Family
ID=5857423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1098873A CH560463A5 (US07847105-20101207-C00016.png) | 1972-09-26 | 1973-07-27 |
Country Status (11)
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5138990A (en) * | 1974-09-30 | 1976-03-31 | Suwa Seikosha Kk | Handotaisochino seizohoho |
| JPS51103780A (ja) * | 1975-03-10 | 1976-09-13 | Tokyo Shibaura Electric Co | Handotaisoshi |
| JPS5267532A (en) * | 1975-12-03 | 1977-06-04 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory unit |
| US4295264A (en) * | 1975-12-29 | 1981-10-20 | Texas Instruments Incorporated | Method of making integrated circuit MOS capacitor using implanted region to change threshold |
| US4212083A (en) * | 1976-05-28 | 1980-07-08 | Texas Instruments Incorporated | MOS Integrated with implanted resistor elements |
| US4246692A (en) * | 1976-05-28 | 1981-01-27 | Texas Instruments Incorporated | MOS Integrated circuits with implanted resistor elements |
| US4114255A (en) * | 1976-08-16 | 1978-09-19 | Intel Corporation | Floating gate storage device and method of fabrication |
| US4187602A (en) * | 1976-12-27 | 1980-02-12 | Texas Instruments Incorporated | Static memory cell using field implanted resistance |
| US4228451A (en) * | 1978-07-21 | 1980-10-14 | Monolithic Memories, Inc. | High resistivity semiconductor resistor device |
| US4212684A (en) * | 1978-11-20 | 1980-07-15 | Ncr Corporation | CISFET Processing including simultaneous doping of silicon components and FET channels |
| US4210465A (en) * | 1978-11-20 | 1980-07-01 | Ncr Corporation | CISFET Processing including simultaneous implantation of spaced polycrystalline silicon regions and non-memory FET channel |
| US4468857A (en) * | 1983-06-27 | 1984-09-04 | Teletype Corporation | Method of manufacturing an integrated circuit device |
| US4485553A (en) * | 1983-06-27 | 1984-12-04 | Teletype Corporation | Method for manufacturing an integrated circuit device |
| US4472875A (en) * | 1983-06-27 | 1984-09-25 | Teletype Corporation | Method for manufacturing an integrated circuit device |
| JPS6097659A (ja) * | 1983-11-01 | 1985-05-31 | Matsushita Electronics Corp | 半導体集積回路 |
| JPS61113269A (ja) * | 1984-11-08 | 1986-05-31 | Rohm Co Ltd | 半導体装置 |
| KR940005293B1 (ko) * | 1991-05-23 | 1994-06-15 | 삼성전자 주식회사 | 게이트와 드레인이 중첩된 모오스 트랜지스터의 제조방법 및 그 구조 |
| JP2919379B2 (ja) * | 1996-08-29 | 1999-07-12 | 九州日本電気株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6713666A (US07847105-20101207-C00016.png) * | 1967-10-07 | 1969-04-09 | ||
| US3655457A (en) * | 1968-08-06 | 1972-04-11 | Ibm | Method of making or modifying a pn-junction by ion implantation |
| US3679492A (en) * | 1970-03-23 | 1972-07-25 | Ibm | Process for making mosfet's |
| US3789504A (en) * | 1971-10-12 | 1974-02-05 | Gte Laboratories Inc | Method of manufacturing an n-channel mos field-effect transistor |
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1973
- 1973-07-27 CH CH1098873A patent/CH560463A5/xx not_active IP Right Cessation
- 1973-07-30 GB GB3613373A patent/GB1447236A/en not_active Expired
- 1973-09-14 US US397402A patent/US3889358A/en not_active Expired - Lifetime
- 1973-09-20 SE SE7312822A patent/SE390085B/xx unknown
- 1973-09-20 JP JP48106414A patent/JPS4973086A/ja active Pending
- 1973-09-21 NL NL7313070A patent/NL7313070A/xx not_active Application Discontinuation
- 1973-09-24 LU LU68478A patent/LU68478A1/xx unknown
- 1973-09-24 FR FR7334108A patent/FR2200624B1/fr not_active Expired
- 1973-09-25 CA CA181,829A patent/CA1004373A/en not_active Expired
- 1973-09-25 IT IT29330/73A patent/IT993410B/it active
- 1973-09-26 BE BE136071A patent/BE805346A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE805346A (fr) | 1974-01-16 |
| FR2200624B1 (US07847105-20101207-C00016.png) | 1977-09-09 |
| SE390085B (sv) | 1976-11-29 |
| JPS4973086A (US07847105-20101207-C00016.png) | 1974-07-15 |
| LU68478A1 (US07847105-20101207-C00016.png) | 1973-12-07 |
| DE2247183B2 (de) | 1977-02-10 |
| FR2200624A1 (US07847105-20101207-C00016.png) | 1974-04-19 |
| US3889358A (en) | 1975-06-17 |
| IT993410B (it) | 1975-09-30 |
| CA1004373A (en) | 1977-01-25 |
| DE2247183A1 (de) | 1974-04-25 |
| GB1447236A (en) | 1976-08-25 |
| NL7313070A (US07847105-20101207-C00016.png) | 1974-03-28 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased |