CH557094A - Photodetektor mit einem halbleiterkoerper und einer elektrisch isolierenden schicht. - Google Patents

Photodetektor mit einem halbleiterkoerper und einer elektrisch isolierenden schicht.

Info

Publication number
CH557094A
CH557094A CH993573A CH993573A CH557094A CH 557094 A CH557094 A CH 557094A CH 993573 A CH993573 A CH 993573A CH 993573 A CH993573 A CH 993573A CH 557094 A CH557094 A CH 557094A
Authority
CH
Switzerland
Prior art keywords
photodetector
insulating layer
electrically insulating
semiconductor body
semiconductor
Prior art date
Application number
CH993573A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH557094A publication Critical patent/CH557094A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866Surface Channel CCD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
CH993573A 1972-08-16 1973-07-09 Photodetektor mit einem halbleiterkoerper und einer elektrisch isolierenden schicht. CH557094A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19722240177 DE2240177A1 (de) 1972-08-16 1972-08-16 Ladungsverschiebeanordnung als photodetektor

Publications (1)

Publication Number Publication Date
CH557094A true CH557094A (de) 1974-12-13

Family

ID=5853673

Family Applications (1)

Application Number Title Priority Date Filing Date
CH993573A CH557094A (de) 1972-08-16 1973-07-09 Photodetektor mit einem halbleiterkoerper und einer elektrisch isolierenden schicht.

Country Status (11)

Country Link
JP (1) JPS4960579A (ja)
AT (1) AT336711B (ja)
BE (1) BE803591A (ja)
CH (1) CH557094A (ja)
DE (1) DE2240177A1 (ja)
FR (1) FR2196524B1 (ja)
GB (1) GB1432985A (ja)
IT (1) IT992873B (ja)
LU (1) LU68230A1 (ja)
NL (1) NL7311203A (ja)
SE (1) SE390468B (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49122284A (ja) * 1973-03-22 1974-11-22
JPS5135296A (ja) * 1974-09-20 1976-03-25 Nippon Electric Co
JPS57124484A (en) * 1981-01-26 1982-08-03 Oki Electric Ind Co Ltd Optical reading sensor

Also Published As

Publication number Publication date
AT336711B (de) 1977-05-25
SE390468B (sv) 1976-12-20
ATA639573A (de) 1976-09-15
FR2196524A1 (ja) 1974-03-15
FR2196524B1 (ja) 1977-02-25
IT992873B (it) 1975-09-30
DE2240177A1 (de) 1974-02-21
JPS4960579A (ja) 1974-06-12
LU68230A1 (ja) 1974-02-21
BE803591A (fr) 1974-02-14
GB1432985A (en) 1976-04-22
NL7311203A (ja) 1974-02-19

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Legal Events

Date Code Title Description
PL Patent ceased