AT336711B - Ladungsverschiebeanordnung als photodetektor - Google Patents
Ladungsverschiebeanordnung als photodetektorInfo
- Publication number
- AT336711B AT336711B AT639573A AT639573A AT336711B AT 336711 B AT336711 B AT 336711B AT 639573 A AT639573 A AT 639573A AT 639573 A AT639573 A AT 639573A AT 336711 B AT336711 B AT 336711B
- Authority
- AT
- Austria
- Prior art keywords
- photodetector
- shifting arrangement
- charge shifting
- charge
- arrangement
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76866—Surface Channel CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19722240177 DE2240177A1 (de) | 1972-08-16 | 1972-08-16 | Ladungsverschiebeanordnung als photodetektor |
Publications (2)
Publication Number | Publication Date |
---|---|
ATA639573A ATA639573A (de) | 1976-09-15 |
AT336711B true AT336711B (de) | 1977-05-25 |
Family
ID=5853673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT639573A AT336711B (de) | 1972-08-16 | 1973-07-19 | Ladungsverschiebeanordnung als photodetektor |
Country Status (11)
Country | Link |
---|---|
JP (1) | JPS4960579A (de) |
AT (1) | AT336711B (de) |
BE (1) | BE803591A (de) |
CH (1) | CH557094A (de) |
DE (1) | DE2240177A1 (de) |
FR (1) | FR2196524B1 (de) |
GB (1) | GB1432985A (de) |
IT (1) | IT992873B (de) |
LU (1) | LU68230A1 (de) |
NL (1) | NL7311203A (de) |
SE (1) | SE390468B (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS49122284A (de) * | 1973-03-22 | 1974-11-22 | ||
JPS5135296A (de) * | 1974-09-20 | 1976-03-25 | Nippon Electric Co | |
JPS57124484A (en) * | 1981-01-26 | 1982-08-03 | Oki Electric Ind Co Ltd | Optical reading sensor |
-
1972
- 1972-08-16 DE DE19722240177 patent/DE2240177A1/de not_active Ceased
-
1973
- 1973-07-09 CH CH993573A patent/CH557094A/de not_active IP Right Cessation
- 1973-07-11 GB GB3305073A patent/GB1432985A/en not_active Expired
- 1973-07-19 AT AT639573A patent/AT336711B/de not_active IP Right Cessation
- 1973-08-08 IT IT2765373A patent/IT992873B/it active
- 1973-08-14 BE BE134560A patent/BE803591A/xx unknown
- 1973-08-14 FR FR7329666A patent/FR2196524B1/fr not_active Expired
- 1973-08-14 LU LU68230D patent/LU68230A1/xx unknown
- 1973-08-14 NL NL7311203A patent/NL7311203A/xx not_active Application Discontinuation
- 1973-08-14 SE SE7311086A patent/SE390468B/xx unknown
- 1973-08-16 JP JP48091365A patent/JPS4960579A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
SE390468B (sv) | 1976-12-20 |
ATA639573A (de) | 1976-09-15 |
FR2196524A1 (de) | 1974-03-15 |
CH557094A (de) | 1974-12-13 |
FR2196524B1 (de) | 1977-02-25 |
IT992873B (it) | 1975-09-30 |
DE2240177A1 (de) | 1974-02-21 |
JPS4960579A (de) | 1974-06-12 |
LU68230A1 (de) | 1974-02-21 |
BE803591A (fr) | 1974-02-14 |
GB1432985A (en) | 1976-04-22 |
NL7311203A (de) | 1974-02-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ELJ | Ceased due to non-payment of the annual fee |