CH557094A - Photodetektor mit einem halbleiterkoerper und einer elektrisch isolierenden schicht. - Google Patents

Photodetektor mit einem halbleiterkoerper und einer elektrisch isolierenden schicht.

Info

Publication number
CH557094A
CH557094A CH993573A CH993573A CH557094A CH 557094 A CH557094 A CH 557094A CH 993573 A CH993573 A CH 993573A CH 993573 A CH993573 A CH 993573A CH 557094 A CH557094 A CH 557094A
Authority
CH
Switzerland
Prior art keywords
photodetector
insulating layer
electrically insulating
semiconductor body
semiconductor
Prior art date
Application number
CH993573A
Other languages
German (de)
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH557094A publication Critical patent/CH557094A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/15Charge-coupled device [CCD] image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/472Surface-channel CCD
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
CH993573A 1972-08-16 1973-07-09 Photodetektor mit einem halbleiterkoerper und einer elektrisch isolierenden schicht. CH557094A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2240177A DE2240177A1 (de) 1972-08-16 1972-08-16 Ladungsverschiebeanordnung als photodetektor

Publications (1)

Publication Number Publication Date
CH557094A true CH557094A (de) 1974-12-13

Family

ID=5853673

Family Applications (1)

Application Number Title Priority Date Filing Date
CH993573A CH557094A (de) 1972-08-16 1973-07-09 Photodetektor mit einem halbleiterkoerper und einer elektrisch isolierenden schicht.

Country Status (11)

Country Link
JP (1) JPS4960579A (en, 2012)
AT (1) AT336711B (en, 2012)
BE (1) BE803591A (en, 2012)
CH (1) CH557094A (en, 2012)
DE (1) DE2240177A1 (en, 2012)
FR (1) FR2196524B1 (en, 2012)
GB (1) GB1432985A (en, 2012)
IT (1) IT992873B (en, 2012)
LU (1) LU68230A1 (en, 2012)
NL (1) NL7311203A (en, 2012)
SE (1) SE390468B (en, 2012)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49122284A (en, 2012) * 1973-03-22 1974-11-22
JPS5135296A (en, 2012) * 1974-09-20 1976-03-25 Nippon Electric Co
JPS57124484A (en) * 1981-01-26 1982-08-03 Oki Electric Ind Co Ltd Optical reading sensor

Also Published As

Publication number Publication date
FR2196524A1 (en, 2012) 1974-03-15
GB1432985A (en) 1976-04-22
ATA639573A (de) 1976-09-15
IT992873B (it) 1975-09-30
LU68230A1 (en, 2012) 1974-02-21
FR2196524B1 (en, 2012) 1977-02-25
JPS4960579A (en, 2012) 1974-06-12
BE803591A (fr) 1974-02-14
AT336711B (de) 1977-05-25
SE390468B (sv) 1976-12-20
DE2240177A1 (de) 1974-02-21
NL7311203A (en, 2012) 1974-02-19

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Legal Events

Date Code Title Description
PL Patent ceased