CH531988A - Boron nitride with wurtzite lattice used as - abrasive - Google Patents

Boron nitride with wurtzite lattice used as - abrasive

Info

Publication number
CH531988A
CH531988A CH686169A CH686169A CH531988A CH 531988 A CH531988 A CH 531988A CH 686169 A CH686169 A CH 686169A CH 686169 A CH686169 A CH 686169A CH 531988 A CH531988 A CH 531988A
Authority
CH
Switzerland
Prior art keywords
boron nitride
wurtzite
hardness
lattice
diamond
Prior art date
Application number
CH686169A
Other languages
German (de)
Inventor
Pittit Bundy Francis
Henry Wentorf Robert
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US191782A external-priority patent/US3212851A/en
Priority claimed from US218800A external-priority patent/US3212852A/en
Application filed by Gen Electric filed Critical Gen Electric
Publication of CH531988A publication Critical patent/CH531988A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
    • C04B35/5831—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride based on cubic boron nitrides or Wurtzitic boron nitrides, including crystal structure transformation of powder
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/77—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by unit-cell parameters, atom positions or structure diagrams
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/10—Solid density
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/60—Optical properties, e.g. expressed in CIELAB-values

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Ceramic Products (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

Boron nitride with Wurtzite lattice used as abrasive. This gas lattice constants of 2.55A and 4.20 A at 25 degrees C and the hardness of diamond. Spec. basic material contg. B and N are subjected to pressures of 110 kilobar in the absence of a catalyst under conditions above the equilibrium line between hexagonal and cubic boron nitride.

Description

  

  
 



  Neue Kristallform von Bornitrid mit grösserer Dichte
Die Erfindung betrifft eine neue Kristallform von Bornitrid, die eine grössere Dichte als das bisher   bekann-    te graphitartig-hexagonale Bornitrid aufweist und die aus einer Quelle für Bor und einer Quelle für Stickstoff durch Anwendung hoher Drucke und gewünschtenfalls hoher Temperaturen erhältlich ist.



   Die Herstellung dieser neuen Kristallform ist in der schweizerischen Patentschrift Nr. 480263 ausführlich beschrieben.



   Die bisherige Herstellung einer dichten Form von Bornitrid bestand gewöhnlich darin, dass eine hexagonale Form von Bornitrid in Gegenwart oder gemeinsam mit einem speziellen Zusatzstoff sehr hohen Drucken und Temperaturen im Stabilitätsbereich von kubischem Bornitrid des Phasendiagrammes von Bornitrid ausgesetzt wurde. Nach Aufhebung des hohen Druckes und der hohen Temperaturen wurde kubisches Bornitrid gewonnen.



   Demgegenüber ist in der schweizerischen Patentschrift Nr. 480 263 ein verbessertes Verfahren zur Herstellung dichterer Formen von Bornitrid beschrieben. Das genannte Verfahren besteht darin, dass man ein Bor und Stickstoff enthaltendes Material in Abwesenheit eines Katalysators Drucken und Temperaturen aussetzt, die im Bornitrid-Phasendiagramm im Stabilitätsbereich von   Bomitrid    mit   kubischem    Kristallgitter bzw. Wurtzitgitter liegen. Dabei kann neben kubischem Bornitrid auch ein Bornitrid mit Wurtzitgitter erhalten werden.



   Das erfindungsgemässe Bornitrid ist dadurch gekennzeichnet, dass es Wurtzit-Kristallstruktur mit Gitterkonstanten bei 250C entsprechend aO von 2,55 Angström und   cO    von 4,20 Angström aufweist, wobei das Bornitrid eine Härte aufweist, die der Härte von Diamant praktisch gleich ist.



   Das Vorliegen der Wurtzit-Struktur wurde durch Röntgenuntersuchung bewiesen. Aus den Werten der Röntgenanalyse und durch Berechnung wurde die Dichte dieses Materials zu etwa 3,43 Gramm/cm3 ermittelt.



  Der Brechungsindex für rotes Licht beträgt etwa 2,22 (doppelbrechend) und die Härte ist etwa gleich wie die von Diamant, d.h. etwa 10 Grad nach Mohs. Die Gitterkonstanten für die Wurtzit-Struktur sind 2,55 A,   c0    = 4,20 A   (250C).   



   Dieses Bornitrid mit Wurtzit-Struktur ist für technische Zwecke in weitem Umfang und in gleicher Weise verwendbar wie natürlicher Diamant, z.B. als Schleifoder Schneidmittel. Es können auch verschiedene Bindemittel oder elektrisch leitfähige Mittel wie Metalle mit dem als Ausgangsmaterial verwendeten Bornitrid gemischt werden, so dass sich eine elektrische Leitfähigkeit ergibt; diese kann bei Verwendung bestimmter Reaktionsgefässe bei der Herstellung zweckmässig bzw. erforderlich sein.

 

   PATENTANSPRUCH



   Bornitrid in einer Kristallform mit grösserer Dichte als der von graphitartig-hexagonalem Bornitrid, dadurch gekennzeichnet, dass das Bornitrid die Wurtzit-Kristallstruktur mit Gitterkonstanten bei 250C entsprechend ao von 2,55 Angström und   cO    von 4,20 Angström aufweist, wobei das Bornitrid eine Härte aufweist, die der Härte von Diamant praktisch gleich ist.

**WARNUNG** Ende DESC Feld konnte Anfang CLMS uberlappen**.



   



  
 



  New crystal form of boron nitride with greater density
The invention relates to a new crystal form of boron nitride which has a greater density than the previously known graphite-like hexagonal boron nitride and which can be obtained from a source for boron and a source for nitrogen by using high pressures and, if desired, high temperatures.



   The production of this new crystal form is described in detail in Swiss Patent No. 480263.



   The previous production of a dense form of boron nitride usually consisted of exposing a hexagonal form of boron nitride in the presence or together with a special additive to very high pressures and temperatures in the stability range of cubic boron nitride in the phase diagram of boron nitride. After releasing the high pressure and high temperatures, cubic boron nitride was obtained.



   In contrast, Swiss Patent No. 480 263 describes an improved process for producing denser forms of boron nitride. The process mentioned consists in exposing a material containing boron and nitrogen in the absence of a catalyst to pressures and temperatures which, in the boron nitride phase diagram, are in the stability range of boron nitride with a cubic crystal lattice or wurtzite lattice. In addition to cubic boron nitride, a boron nitride with a wurtzite lattice can also be obtained.



   The boron nitride according to the invention is characterized in that it has a wurtzite crystal structure with lattice constants at 250C corresponding to aO of 2.55 Angstroms and cO of 4.20 Angstroms, the boron nitride having a hardness that is practically the same as the hardness of diamond.



   The existence of the wurtzite structure was proven by X-ray examination. The density of this material was determined to be approximately 3.43 grams / cm3 from the values of the X-ray analysis and by calculation.



  The index of refraction for red light is about 2.22 (birefringent) and the hardness is about the same as that of diamond, i.e. about 10 degrees after Mohs. The lattice constants for the wurtzite structure are 2.55 A, c0 = 4.20 A (250C).



   This boron nitride with a wurtzite structure can be used for technical purposes to a large extent and in the same way as natural diamond, e.g. as a grinding or cutting agent. Various binders or electrically conductive agents such as metals can also be mixed with the boron nitride used as the starting material, so that electrical conductivity results; this can be useful or necessary when using certain reaction vessels during manufacture.

 

   PATENT CLAIM



   Boron nitride in a crystal form with a greater density than that of graphite-like hexagonal boron nitride, characterized in that the boron nitride has the wurtzite crystal structure with lattice constants at 250C corresponding to ao of 2.55 Angstrom and cO of 4.20 Angstrom, the boron nitride having a hardness which is practically the same as the hardness of diamond.

** WARNING ** End of DESC field could overlap beginning of CLMS **.

Claims (1)

**WARNUNG** Anfang CLMS Feld konnte Ende DESC uberlappen **. ** WARNING ** Beginning of CLMS field could overlap end of DESC **. Neue Kristallform von Bornitrid mit grösserer Dichte Die Erfindung betrifft eine neue Kristallform von Bornitrid, die eine grössere Dichte als das bisher bekann- te graphitartig-hexagonale Bornitrid aufweist und die aus einer Quelle für Bor und einer Quelle für Stickstoff durch Anwendung hoher Drucke und gewünschtenfalls hoher Temperaturen erhältlich ist. New crystal form of boron nitride with greater density The invention relates to a new crystal form of boron nitride which has a greater density than the previously known graphite-like hexagonal boron nitride and which can be obtained from a source for boron and a source for nitrogen by using high pressures and, if desired, high temperatures. Die Herstellung dieser neuen Kristallform ist in der schweizerischen Patentschrift Nr. 480263 ausführlich beschrieben. The production of this new crystal form is described in detail in Swiss Patent No. 480263. Die bisherige Herstellung einer dichten Form von Bornitrid bestand gewöhnlich darin, dass eine hexagonale Form von Bornitrid in Gegenwart oder gemeinsam mit einem speziellen Zusatzstoff sehr hohen Drucken und Temperaturen im Stabilitätsbereich von kubischem Bornitrid des Phasendiagrammes von Bornitrid ausgesetzt wurde. Nach Aufhebung des hohen Druckes und der hohen Temperaturen wurde kubisches Bornitrid gewonnen. The previous production of a dense form of boron nitride usually consisted of exposing a hexagonal form of boron nitride in the presence or together with a special additive to very high pressures and temperatures in the stability range of cubic boron nitride in the phase diagram of boron nitride. After releasing the high pressure and high temperatures, cubic boron nitride was obtained. Demgegenüber ist in der schweizerischen Patentschrift Nr. 480 263 ein verbessertes Verfahren zur Herstellung dichterer Formen von Bornitrid beschrieben. Das genannte Verfahren besteht darin, dass man ein Bor und Stickstoff enthaltendes Material in Abwesenheit eines Katalysators Drucken und Temperaturen aussetzt, die im Bornitrid-Phasendiagramm im Stabilitätsbereich von Bomitrid mit kubischem Kristallgitter bzw. Wurtzitgitter liegen. Dabei kann neben kubischem Bornitrid auch ein Bornitrid mit Wurtzitgitter erhalten werden. In contrast, Swiss Patent No. 480 263 describes an improved process for producing denser forms of boron nitride. The process mentioned consists in exposing a material containing boron and nitrogen in the absence of a catalyst to pressures and temperatures which, in the boron nitride phase diagram, are in the stability range of boron nitride with a cubic crystal lattice or wurtzite lattice. In addition to cubic boron nitride, a boron nitride with a wurtzite lattice can also be obtained. Das erfindungsgemässe Bornitrid ist dadurch gekennzeichnet, dass es Wurtzit-Kristallstruktur mit Gitterkonstanten bei 250C entsprechend aO von 2,55 Angström und cO von 4,20 Angström aufweist, wobei das Bornitrid eine Härte aufweist, die der Härte von Diamant praktisch gleich ist. The boron nitride according to the invention is characterized in that it has a wurtzite crystal structure with lattice constants at 250C corresponding to aO of 2.55 Angstroms and cO of 4.20 Angstroms, the boron nitride having a hardness that is practically the same as the hardness of diamond. Das Vorliegen der Wurtzit-Struktur wurde durch Röntgenuntersuchung bewiesen. Aus den Werten der Röntgenanalyse und durch Berechnung wurde die Dichte dieses Materials zu etwa 3,43 Gramm/cm3 ermittelt. The existence of the wurtzite structure was proven by X-ray examination. The density of this material was determined to be approximately 3.43 grams / cm3 from the values of the X-ray analysis and by calculation. Der Brechungsindex für rotes Licht beträgt etwa 2,22 (doppelbrechend) und die Härte ist etwa gleich wie die von Diamant, d.h. etwa 10 Grad nach Mohs. Die Gitterkonstanten für die Wurtzit-Struktur sind 2,55 A, c0 = 4,20 A (250C). The index of refraction for red light is about 2.22 (birefringent) and the hardness is about the same as that of diamond, i.e. about 10 degrees after Mohs. The lattice constants for the wurtzite structure are 2.55 A, c0 = 4.20 A (250C). Dieses Bornitrid mit Wurtzit-Struktur ist für technische Zwecke in weitem Umfang und in gleicher Weise verwendbar wie natürlicher Diamant, z.B. als Schleifoder Schneidmittel. Es können auch verschiedene Bindemittel oder elektrisch leitfähige Mittel wie Metalle mit dem als Ausgangsmaterial verwendeten Bornitrid gemischt werden, so dass sich eine elektrische Leitfähigkeit ergibt; diese kann bei Verwendung bestimmter Reaktionsgefässe bei der Herstellung zweckmässig bzw. erforderlich sein. This boron nitride with a wurtzite structure can be used for technical purposes to a large extent and in the same way as natural diamond, e.g. as a grinding or cutting agent. Various binders or electrically conductive agents such as metals can also be mixed with the boron nitride used as the starting material, so that electrical conductivity results; this can be useful or necessary when using certain reaction vessels during manufacture. PATENTANSPRUCH PATENT CLAIM Bornitrid in einer Kristallform mit grösserer Dichte als der von graphitartig-hexagonalem Bornitrid, dadurch gekennzeichnet, dass das Bornitrid die Wurtzit-Kristallstruktur mit Gitterkonstanten bei 250C entsprechend ao von 2,55 Angström und cO von 4,20 Angström aufweist, wobei das Bornitrid eine Härte aufweist, die der Härte von Diamant praktisch gleich ist. Boron nitride in a crystal form with a greater density than that of graphite-like hexagonal boron nitride, characterized in that the boron nitride has the wurtzite crystal structure with lattice constants at 250C corresponding to ao of 2.55 Angstrom and cO of 4.20 Angstrom, the boron nitride having a hardness which is practically the same as the hardness of diamond.
CH686169A 1962-05-02 1963-05-01 Boron nitride with wurtzite lattice used as - abrasive CH531988A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19191362A 1962-05-02 1962-05-02
US191782A US3212851A (en) 1962-05-02 1962-05-02 Boron nitride having a new structure
US218800A US3212852A (en) 1962-07-30 1962-07-30 Method for converting hexagonal boron nitride to a new structure

Publications (1)

Publication Number Publication Date
CH531988A true CH531988A (en) 1972-12-31

Family

ID=27392949

Family Applications (2)

Application Number Title Priority Date Filing Date
CH547663A CH480263A (en) 1962-05-02 1963-05-01 Process for the production of high density boron nitride
CH686169A CH531988A (en) 1962-05-02 1963-05-01 Boron nitride with wurtzite lattice used as - abrasive

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CH547663A CH480263A (en) 1962-05-02 1963-05-01 Process for the production of high density boron nitride

Country Status (7)

Country Link
BE (1) BE631829A (en)
CH (2) CH480263A (en)
DE (2) DE1467050A1 (en)
ES (1) ES287489A1 (en)
GB (1) GB1048973A (en)
NL (1) NL292253A (en)
SE (1) SE314969B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5116589A (en) * 1990-06-18 1992-05-26 The United States Of America As Represented By The United States Department Of Energy High density hexagonal boron nitride prepared by hot isostatic pressing in refractory metal containers
US5240691A (en) * 1990-06-18 1993-08-31 Regents Of The University Of California High density crystalline boron prepared by hot isostatic pressing in refractory metal containers

Also Published As

Publication number Publication date
CH480263A (en) 1969-10-31
DE1467050A1 (en) 1969-01-23
DE1792696C2 (en) 1982-07-08
SE314969B (en) 1969-09-22
DE1792696A1 (en) 1971-11-25
BE631829A (en) 1963-09-02
NL292253A (en)
GB1048973A (en) 1966-11-23
ES287489A1 (en) 1963-11-16

Similar Documents

Publication Publication Date Title
DE857043C (en) Process for converting carbon monoxide with hydrogen
CH459159A (en) Catalyst for reforming hydrocarbons, process for its production and use of the catalyst
DE729290C (en) Process for converting carbon monoxide and hydrogen
DE735276C (en) Process for the production of knock-proof petrol
CH531988A (en) Boron nitride with wurtzite lattice used as - abrasive
DE1542612A1 (en) Process for the production of a diamond-containing material
DE706868C (en) Process for the production of hydrogen
DE484337C (en) Process for the catalytic production of multi-membered paraffinic hydrocarbons from carbon oxides and hydrogen
DE2027001C3 (en) Process for the production of a catalyst carrier based on zirconium dioxide
DE678133C (en) Process for the production of sulfur by reducing sulfur dioxide
DE887802C (en) Process for the production of hydrogen and carbon dioxide by reacting hydrocarbon gases with water vapor or carbon dioxide
DE695276C (en) Process for the production of hydrocarbons from solid carbonaceous substances
DE1259863B (en) Process for the production of boron carbide
DE585420C (en) Production of hydrogen or hydrogen-nitrogen mixtures
DE525556C (en) Production of hydrogen and carbon monoxide from methane
DE767852C (en) Process for the preparation of shaped catalysts containing iron as a main component
DE747896C (en) Method for generating a constant flow of oxygen
DE435724C (en) Drawing nozzle for drawing wire
DE565944C (en) Process for the production of acetone
DE1567720C (en) Process for the catalytic reduction of sulfur dioxide with hydrocarbons to sulfur
DE405234C (en) Process for the production of light fire cement
AT119038B (en) Process for the preparation of paraffinic hydrocarbons.
AT149657B (en) Process for the production of hydrogen by reacting carbon oxide or gas mixtures containing carbon oxide with water vapor.
DE372193C (en) Process for the preparation of addition compounds from acetylene and chlorine
DE575086C (en) Process for the enrichment of methane in gas mixtures containing hydrogen and methane

Legal Events

Date Code Title Description
PL Patent ceased