CH523573A - Storage matrix - Google Patents
Storage matrixInfo
- Publication number
- CH523573A CH523573A CH378370A CH378370A CH523573A CH 523573 A CH523573 A CH 523573A CH 378370 A CH378370 A CH 378370A CH 378370 A CH378370 A CH 378370A CH 523573 A CH523573 A CH 523573A
- Authority
- CH
- Switzerland
- Prior art keywords
- storage matrix
- matrix
- storage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
- H10B63/32—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the bipolar type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/72—Array wherein the access device being a diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80699469A | 1969-03-13 | 1969-03-13 | |
US88707669A | 1969-12-22 | 1969-12-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH523573A true CH523573A (en) | 1972-05-31 |
Family
ID=27122944
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH378370A CH523573A (en) | 1969-03-13 | 1970-03-13 | Storage matrix |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE747342A (en) |
CH (1) | CH523573A (en) |
DE (1) | DE2011851C3 (en) |
FR (1) | FR2037195B1 (en) |
GB (1) | GB1308711A (en) |
NL (1) | NL170201C (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004019860B4 (en) | 2004-04-23 | 2006-03-02 | Infineon Technologies Ag | Method and apparatus for programming CBRAM memory cells |
CN111123046B (en) * | 2019-12-03 | 2022-06-10 | 国网河南省电力公司鹤壁供电公司 | Device for rapidly measuring cable insulation strength |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL284730A (en) * | 1960-03-23 | 1900-01-01 | ||
NL294168A (en) * | 1963-06-17 | |||
DE1212155B (en) * | 1964-02-05 | 1966-03-10 | Danfoss As | Electric storage |
US3383472A (en) * | 1964-07-24 | 1968-05-14 | Ericsson Telefon Ab L M | Coordinate switch and telecommunication system comprising bilateral semiconductor switch means |
SE313078B (en) * | 1964-08-07 | 1969-08-04 | Ericsson Telefon Ab L M | |
US3493932A (en) * | 1966-01-17 | 1970-02-03 | Ibm | Integrated switching matrix comprising field-effect devices |
FR1533269A (en) * | 1966-05-19 | 1968-07-19 | Philips Nv | Matrix read memory in semiconductor material |
FR1526736A (en) * | 1966-08-22 | 1968-05-24 | Fairchild Camera Instr Co | Permanent memory with optical programming |
US3629863A (en) * | 1968-11-04 | 1971-12-21 | Energy Conversion Devices Inc | Film deposited circuits and devices therefor |
US3573757A (en) * | 1968-11-04 | 1971-04-06 | Energy Conversion Devices Inc | Memory matrix having serially connected threshold and memory switch devices at each cross-over point |
-
1970
- 1970-03-11 GB GB1165270A patent/GB1308711A/en not_active Expired
- 1970-03-12 FR FR7008944A patent/FR2037195B1/fr not_active Expired
- 1970-03-12 DE DE2011851A patent/DE2011851C3/en not_active Expired
- 1970-03-13 NL NLAANVRAGE7003605,A patent/NL170201C/en not_active IP Right Cessation
- 1970-03-13 BE BE747342D patent/BE747342A/en unknown
- 1970-03-13 CH CH378370A patent/CH523573A/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
GB1308711A (en) | 1973-03-07 |
NL170201B (en) | 1982-05-03 |
NL7003605A (en) | 1970-09-15 |
FR2037195A1 (en) | 1970-12-31 |
DE2011851B2 (en) | 1976-03-25 |
DE2011851A1 (en) | 1970-10-08 |
DE2011851C3 (en) | 1981-03-12 |
FR2037195B1 (en) | 1974-05-03 |
BE747342A (en) | 1970-08-17 |
NL170201C (en) | 1982-10-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |