NL170201C - MATRIX OF MEMORY ELEMENTS APPLIED IN AN INSULATING LAYER TO A COMMON SEMI-CONDUCTOR BODY, EACH OF MEMORY ELEMENTS CONTAINING A FIRST AND A SECOND ELECTRODE AND A STAGE OF MONTHLY STAGES OF METAL STAGE OF TWO STEPS. - Google Patents

MATRIX OF MEMORY ELEMENTS APPLIED IN AN INSULATING LAYER TO A COMMON SEMI-CONDUCTOR BODY, EACH OF MEMORY ELEMENTS CONTAINING A FIRST AND A SECOND ELECTRODE AND A STAGE OF MONTHLY STAGES OF METAL STAGE OF TWO STEPS.

Info

Publication number
NL170201C
NL170201C NLAANVRAGE7003605,A NL7003605A NL170201C NL 170201 C NL170201 C NL 170201C NL 7003605 A NL7003605 A NL 7003605A NL 170201 C NL170201 C NL 170201C
Authority
NL
Netherlands
Prior art keywords
memory elements
stage
monthly
stages
matrix
Prior art date
Application number
NLAANVRAGE7003605,A
Other languages
Dutch (nl)
Other versions
NL170201B (en
NL7003605A (en
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of NL7003605A publication Critical patent/NL7003605A/xx
Publication of NL170201B publication Critical patent/NL170201B/en
Application granted granted Critical
Publication of NL170201C publication Critical patent/NL170201C/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H10B63/32—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the bipolar type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
NLAANVRAGE7003605,A 1969-03-13 1970-03-13 MATRIX OF MEMORY ELEMENTS APPLIED IN AN INSULATING LAYER TO A COMMON SEMI-CONDUCTOR BODY, EACH OF MEMORY ELEMENTS CONTAINING A FIRST AND A SECOND ELECTRODE AND A STAGE OF MONTHLY STAGES OF METAL STAGE OF TWO STEPS. NL170201C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US80699469A 1969-03-13 1969-03-13
US88707669A 1969-12-22 1969-12-22

Publications (3)

Publication Number Publication Date
NL7003605A NL7003605A (en) 1970-09-15
NL170201B NL170201B (en) 1982-05-03
NL170201C true NL170201C (en) 1982-10-01

Family

ID=27122944

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7003605,A NL170201C (en) 1969-03-13 1970-03-13 MATRIX OF MEMORY ELEMENTS APPLIED IN AN INSULATING LAYER TO A COMMON SEMI-CONDUCTOR BODY, EACH OF MEMORY ELEMENTS CONTAINING A FIRST AND A SECOND ELECTRODE AND A STAGE OF MONTHLY STAGES OF METAL STAGE OF TWO STEPS.

Country Status (6)

Country Link
BE (1) BE747342A (en)
CH (1) CH523573A (en)
DE (1) DE2011851C3 (en)
FR (1) FR2037195B1 (en)
GB (1) GB1308711A (en)
NL (1) NL170201C (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004019860B4 (en) 2004-04-23 2006-03-02 Infineon Technologies Ag Method and apparatus for programming CBRAM memory cells
CN111123046B (en) * 2019-12-03 2022-06-10 国网河南省电力公司鹤壁供电公司 Device for rapidly measuring cable insulation strength

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL284730A (en) * 1960-03-23 1900-01-01
NL294168A (en) * 1963-06-17
DE1212155B (en) * 1964-02-05 1966-03-10 Danfoss As Electric storage
US3383472A (en) * 1964-07-24 1968-05-14 Ericsson Telefon Ab L M Coordinate switch and telecommunication system comprising bilateral semiconductor switch means
SE313078B (en) * 1964-08-07 1969-08-04 Ericsson Telefon Ab L M
US3493932A (en) * 1966-01-17 1970-02-03 Ibm Integrated switching matrix comprising field-effect devices
FR1533269A (en) * 1966-05-19 1968-07-19 Philips Nv Matrix read memory in semiconductor material
FR1526736A (en) * 1966-08-22 1968-05-24 Fairchild Camera Instr Co Permanent memory with optical programming
US3629863A (en) * 1968-11-04 1971-12-21 Energy Conversion Devices Inc Film deposited circuits and devices therefor
US3573757A (en) * 1968-11-04 1971-04-06 Energy Conversion Devices Inc Memory matrix having serially connected threshold and memory switch devices at each cross-over point

Also Published As

Publication number Publication date
GB1308711A (en) 1973-03-07
NL170201B (en) 1982-05-03
CH523573A (en) 1972-05-31
NL7003605A (en) 1970-09-15
FR2037195A1 (en) 1970-12-31
DE2011851B2 (en) 1976-03-25
DE2011851A1 (en) 1970-10-08
DE2011851C3 (en) 1981-03-12
FR2037195B1 (en) 1974-05-03
BE747342A (en) 1970-08-17

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Legal Events

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