CH496815A - Verfahren zur Herstellung einer Halbleiteranordnung mit mindestens einem Halbleiterkörper, der mit einem oder mehreren starren Leitern versehen ist, Vorrichtung zur Ausführung des Verfahrens und nach dem Verfahren hergestellte Halbleiteranordnung - Google Patents
Verfahren zur Herstellung einer Halbleiteranordnung mit mindestens einem Halbleiterkörper, der mit einem oder mehreren starren Leitern versehen ist, Vorrichtung zur Ausführung des Verfahrens und nach dem Verfahren hergestellte HalbleiteranordnungInfo
- Publication number
- CH496815A CH496815A CH199369A CH199369A CH496815A CH 496815 A CH496815 A CH 496815A CH 199369 A CH199369 A CH 199369A CH 199369 A CH199369 A CH 199369A CH 496815 A CH496815 A CH 496815A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor
- semiconductor arrangement
- producing
- carrying
- rigid conductors
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H01L2924/01006—Carbon [C]
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- H01L2924/01013—Aluminum [Al]
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- H01L2924/01024—Chromium [Cr]
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- H01L2924/01029—Copper [Cu]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01033—Arsenic [As]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01072—Hafnium [Hf]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01074—Tungsten [W]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01079—Gold [Au]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Die Bonding (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL6802060A NL6802060A (no) | 1968-02-13 | 1968-02-13 | |
NL6802061A NL6802061A (no) | 1968-02-13 | 1968-02-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH496815A true CH496815A (de) | 1970-09-30 |
Family
ID=26644295
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH199469A CH491499A (de) | 1968-02-13 | 1969-02-10 | Halbleiteranordnung mit mindestens einem Halbleiterkörper, der mit einem oder mehreren starren Leitern versehen ist |
CH199369A CH496815A (de) | 1968-02-13 | 1969-02-10 | Verfahren zur Herstellung einer Halbleiteranordnung mit mindestens einem Halbleiterkörper, der mit einem oder mehreren starren Leitern versehen ist, Vorrichtung zur Ausführung des Verfahrens und nach dem Verfahren hergestellte Halbleiteranordnung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH199469A CH491499A (de) | 1968-02-13 | 1969-02-10 | Halbleiteranordnung mit mindestens einem Halbleiterkörper, der mit einem oder mehreren starren Leitern versehen ist |
Country Status (5)
Country | Link |
---|---|
BE (2) | BE728374A (no) |
CH (2) | CH491499A (no) |
DE (2) | DE1906726A1 (no) |
FR (2) | FR2001820A1 (no) |
GB (2) | GB1251757A (no) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2482329A (en) * | 1946-05-27 | 1949-09-20 | Rca Corp | Apparatus for selective vapor coating |
US3007028A (en) * | 1955-06-28 | 1961-10-31 | Nat Presto Ind | Electrically heated device with plug-in thermostat |
GB839081A (en) * | 1957-12-13 | 1960-06-29 | Westinghouse Electric Corp | Improvements in or relating to evaporation processes for the deposition of metals, particularly for use in the making of semi-conductor devices |
FR1497294A (fr) * | 1965-10-22 | 1967-10-06 | Motorola Inc | Procédé pour la métallisation des semi-conducteurs et semi-conducteurs formes par ce procédé |
FR1536321A (fr) * | 1966-06-30 | 1968-08-10 | Texas Instruments Inc | Contacts ohmiques pour des dispositifs à semi-conducteurs |
-
1969
- 1969-02-10 CH CH199469A patent/CH491499A/de not_active IP Right Cessation
- 1969-02-10 CH CH199369A patent/CH496815A/de not_active IP Right Cessation
- 1969-02-10 GB GB1251757D patent/GB1251757A/en not_active Expired
- 1969-02-10 GB GB1258942D patent/GB1258942A/en not_active Expired
- 1969-02-11 DE DE19691906726 patent/DE1906726A1/de active Pending
- 1969-02-11 DE DE19691906727 patent/DE1906727A1/de active Pending
- 1969-02-13 BE BE728374D patent/BE728374A/xx unknown
- 1969-02-13 BE BE728375D patent/BE728375A/xx unknown
- 1969-02-13 FR FR6903433A patent/FR2001820A1/fr not_active Withdrawn
- 1969-02-13 FR FR6903432A patent/FR2001819A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
BE728375A (no) | 1969-08-13 |
BE728374A (no) | 1969-08-13 |
FR2001820A1 (fr) | 1969-10-03 |
GB1251757A (no) | 1971-10-27 |
CH491499A (de) | 1970-05-31 |
FR2001819A1 (fr) | 1969-10-03 |
DE1906727A1 (de) | 1969-09-25 |
DE1906726A1 (de) | 1969-09-18 |
GB1258942A (no) | 1971-12-30 |
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CH496815A (de) | Verfahren zur Herstellung einer Halbleiteranordnung mit mindestens einem Halbleiterkörper, der mit einem oder mehreren starren Leitern versehen ist, Vorrichtung zur Ausführung des Verfahrens und nach dem Verfahren hergestellte Halbleiteranordnung |
Legal Events
Date | Code | Title | Description |
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PL | Patent ceased |