CH496369A - Elektronische Relaisschaltungsanordnung - Google Patents
Elektronische RelaisschaltungsanordnungInfo
- Publication number
- CH496369A CH496369A CH1660667A CH1660667A CH496369A CH 496369 A CH496369 A CH 496369A CH 1660667 A CH1660667 A CH 1660667A CH 1660667 A CH1660667 A CH 1660667A CH 496369 A CH496369 A CH 496369A
- Authority
- CH
- Switzerland
- Prior art keywords
- electronic relay
- relay circuitry
- circuitry
- electronic
- relay
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1027—Thyristors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6616834A NL6616834A (xx) | 1966-11-30 | 1966-11-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH496369A true CH496369A (de) | 1970-09-15 |
Family
ID=19798345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH1660667A CH496369A (de) | 1966-11-30 | 1967-11-27 | Elektronische Relaisschaltungsanordnung |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US3564291A (xx) |
| JP (1) | JPS4828468B1 (xx) |
| AT (1) | AT284250B (xx) |
| BE (1) | BE707216A (xx) |
| CH (1) | CH496369A (xx) |
| DE (1) | DE1286098B (xx) |
| DK (1) | DK119413B (xx) |
| GB (1) | GB1213636A (xx) |
| NL (1) | NL6616834A (xx) |
| SE (1) | SE326730B (xx) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL6908332A (xx) * | 1969-05-30 | 1970-12-02 | ||
| US3826873A (en) * | 1971-10-12 | 1974-07-30 | Gte Sylvania Inc | Switching circuit employing latching type semiconductor devices and associated control transistors |
| US3819867A (en) * | 1971-10-12 | 1974-06-25 | Gte Laboratories Inc | Matrix employing semiconductor switching circuit |
| US3737588A (en) * | 1971-10-12 | 1973-06-05 | Gte Sylvania Inc | High speed semiconductor switching circuit |
| CH543178A (de) * | 1972-03-27 | 1973-10-15 | Bbc Brown Boveri & Cie | Kontinuierlich steuerbares Leistungshalbleiterbauelement |
| US4200772A (en) * | 1973-08-29 | 1980-04-29 | Graphic Scanning Corp. | Computer controlled telephone answering system |
| US4001867A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Semiconductive devices with integrated circuit switches |
| US4001866A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Monolithic, junction isolated photrac |
| JPS5759717B2 (xx) * | 1974-12-27 | 1982-12-16 | Hitachi Ltd | |
| SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
| JPS5356865U (xx) * | 1976-10-18 | 1978-05-15 | ||
| JPS5391569U (xx) * | 1976-12-24 | 1978-07-26 | ||
| IL68659A0 (en) * | 1983-05-11 | 1983-09-30 | Tadiran Israel Elect Ind Ltd | Rf power switches |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3189783A (en) * | 1963-03-25 | 1965-06-15 | Zenith Radio Corp | Switching arrangement for fast on-off switching of high amplitude current |
| US3299334A (en) * | 1963-11-14 | 1967-01-17 | Zenith Radio Corp | Remote control system using a pair of semiconductor switches to effect bidirectionalcurrent flow in a control device |
-
1966
- 1966-11-30 NL NL6616834A patent/NL6616834A/xx unknown
-
1967
- 1967-11-08 DE DEN31566A patent/DE1286098B/de not_active Withdrawn
- 1967-11-20 US US684240A patent/US3564291A/en not_active Expired - Lifetime
- 1967-11-27 DK DK592267AA patent/DK119413B/da unknown
- 1967-11-27 AT AT1067867A patent/AT284250B/de not_active IP Right Cessation
- 1967-11-27 SE SE16251/67A patent/SE326730B/xx unknown
- 1967-11-27 CH CH1660667A patent/CH496369A/de not_active IP Right Cessation
- 1967-11-27 GB GB53819/67A patent/GB1213636A/en not_active Expired
- 1967-11-28 BE BE707216D patent/BE707216A/xx unknown
- 1967-11-30 JP JP42076687A patent/JPS4828468B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US3564291A (en) | 1971-02-16 |
| DE1286098B (de) | 1969-01-02 |
| AT284250B (de) | 1970-09-10 |
| GB1213636A (en) | 1970-11-25 |
| JPS4828468B1 (xx) | 1973-09-01 |
| SE326730B (xx) | 1970-08-03 |
| NL6616834A (xx) | 1968-05-31 |
| DK119413B (da) | 1970-12-28 |
| BE707216A (xx) | 1968-05-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PL | Patent ceased | ||
| PL | Patent ceased |