CH490514A - Verfahren zur Herstellung von Siliziumnitridschichten - Google Patents

Verfahren zur Herstellung von Siliziumnitridschichten

Info

Publication number
CH490514A
CH490514A CH874067A CH874067A CH490514A CH 490514 A CH490514 A CH 490514A CH 874067 A CH874067 A CH 874067A CH 874067 A CH874067 A CH 874067A CH 490514 A CH490514 A CH 490514A
Authority
CH
Switzerland
Prior art keywords
production
silicon nitride
nitride layers
layers
silicon
Prior art date
Application number
CH874067A
Other languages
English (en)
Inventor
George Wilkes John
Edwin Bradshaw Stanley
Robert Badcock Frank
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH490514A publication Critical patent/CH490514A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Formation Of Insulating Films (AREA)
CH874067A 1966-08-23 1967-06-20 Verfahren zur Herstellung von Siliziumnitridschichten CH490514A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB28176/66A GB1203211A (en) 1966-08-23 1966-08-23 Improvements in the formation of layers on silicon

Publications (1)

Publication Number Publication Date
CH490514A true CH490514A (de) 1970-05-15

Family

ID=10271494

Family Applications (1)

Application Number Title Priority Date Filing Date
CH874067A CH490514A (de) 1966-08-23 1967-06-20 Verfahren zur Herstellung von Siliziumnitridschichten

Country Status (4)

Country Link
CH (1) CH490514A (de)
DE (1) DE1621300A1 (de)
GB (1) GB1203211A (de)
NL (1) NL6708533A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015694A2 (de) * 1979-03-09 1980-09-17 Fujitsu Limited Verfahren zur Herstellung eines isolierenden Films auf der Oberfläche eines Halbleiterkörpers

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0015694A2 (de) * 1979-03-09 1980-09-17 Fujitsu Limited Verfahren zur Herstellung eines isolierenden Films auf der Oberfläche eines Halbleiterkörpers
EP0015694A3 (en) * 1979-03-09 1980-11-12 Fujitsu Limited Method for forming an insulating film on a semiconductor substrate surface

Also Published As

Publication number Publication date
DE1621300A1 (de) 1971-06-24
NL6708533A (de) 1967-12-27
GB1203211A (en) 1970-08-26

Similar Documents

Publication Publication Date Title
AT284439B (de) Verfahren zur Herstellung von Silanpolykondensaten
AT278040B (de) Verfahren zur Herstellung von Organosiliziumverbindungen
CH473837A (de) Verfahren zur Herstellung von Penicillinen
CH490271A (de) Verfahren zur Herstellung von hexagonalem Bornitrid
AT297659B (de) Verfahren zur Herstellung von Siliziumkarbidkristallen
AT306201B (de) Verfahren zur Herstellung von Waschmitteln
CH529085A (de) Verfahren zur Herstellung von Prostaglandinen
AT277161B (de) Verfahren zur Herstellung von Siliziumkarbidkristallen
AT277947B (de) Verfahren zur Herstellung von Monoolefinen
AT266219B (de) Verfahren zur Herstellung von Halbleiteranordnungen
CH495924A (de) Verfahren zur Herstellung von Zement
AT291193B (de) Verfahren zur Herstellung von kristallinem Siliciumcarbid
CH468801A (de) Verfahren zur Herstellung von Reissverschlüssen
AT258249B (de) Verfahren zur Herstellung von Aluminiumnitrid
AT266810B (de) Verfahren zur Herstellung von ɛ-Caprolacton
CH455054A (de) Verfahren zur Herstellung von Planartransistoren
AT289090B (de) Verfahren zur Herstellung von Rhodanverbindungen
CH488809A (de) Verfahren zur Herstellung von Beryllium-Aluminiumwerkstoffen
AT269056B (de) Verfahren zur Herstellung gebundener Faservliese
CH490514A (de) Verfahren zur Herstellung von Siliziumnitridschichten
CH494065A (de) Verfahren zur Herstellung von Halbleiterkristallen
AT281281B (de) Verfahren zur Herstellung von Penicillinen
CH483388A (de) Verfahren zur Herstellung von Tritylaminen
AT269807B (de) Verfahren zur Herstellung von Germanium-(II)-phosphit
CH513770A (de) Verfahren zur Herstellung von isotropem Bornitrid

Legal Events

Date Code Title Description
PL Patent ceased