GB1203211A - Improvements in the formation of layers on silicon - Google Patents

Improvements in the formation of layers on silicon

Info

Publication number
GB1203211A
GB1203211A GB28176/66A GB2817666A GB1203211A GB 1203211 A GB1203211 A GB 1203211A GB 28176/66 A GB28176/66 A GB 28176/66A GB 2817666 A GB2817666 A GB 2817666A GB 1203211 A GB1203211 A GB 1203211A
Authority
GB
United Kingdom
Prior art keywords
silicon
furnace
ammonia
nitride layer
autoclave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB28176/66A
Inventor
John George Wilkes
Stanley Edwin Bradshaw
Frank Robert Babcock
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASSOCIATED SEMICONDUCTOR MFT
Original Assignee
ASSOCIATED SEMICONDUCTOR MFT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASSOCIATED SEMICONDUCTOR MFT filed Critical ASSOCIATED SEMICONDUCTOR MFT
Priority to GB28176/66A priority Critical patent/GB1203211A/en
Priority to NL6708533A priority patent/NL6708533A/xx
Priority to DE19671621300 priority patent/DE1621300A1/en
Priority to CH874067A priority patent/CH490514A/en
Priority to FR111449A priority patent/FR1535579A/en
Publication of GB1203211A publication Critical patent/GB1203211A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)

Abstract

1,203,211. Silicon nitride layer on silicon. ASSOCIATED SEMICONDUCTOR MFRS. Ltd. 14 Nov., 1967 [23 Aug., 1966], No. 28176/66. Heading CIA. [Also in Division H1] A silicon nitride layer is grown on the surface of a silicon substrate by heating the substrate in an ammonia-containing atmosphere at a pressure of at least 20 lb./sq. inch at a temperature above 500‹ C., preferably from 800‹ to 1200‹ C. In one embodiment nested vessels 12 of silica containing the silicon strip 14 are placed in the base 1 of a dried autoclave which is then sealed and connected to a vacuum system by tube 9. After filling with ammonia to the required pressure the autoclave is lowered into a furnace and heated. For temperatures above 800‹ C. a low heat capacity furnace is used such as a resistance furnace, the whole assembly being surrounded by a stainless steel container.
GB28176/66A 1966-08-23 1966-08-23 Improvements in the formation of layers on silicon Expired GB1203211A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB28176/66A GB1203211A (en) 1966-08-23 1966-08-23 Improvements in the formation of layers on silicon
NL6708533A NL6708533A (en) 1966-08-23 1967-06-20
DE19671621300 DE1621300A1 (en) 1966-08-23 1967-06-20 Process for the production of silicon nitride layers
CH874067A CH490514A (en) 1966-08-23 1967-06-20 Process for the production of silicon nitride layers
FR111449A FR1535579A (en) 1966-08-23 1967-06-22 Method of forming a silicon nitride layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB28176/66A GB1203211A (en) 1966-08-23 1966-08-23 Improvements in the formation of layers on silicon

Publications (1)

Publication Number Publication Date
GB1203211A true GB1203211A (en) 1970-08-26

Family

ID=10271494

Family Applications (1)

Application Number Title Priority Date Filing Date
GB28176/66A Expired GB1203211A (en) 1966-08-23 1966-08-23 Improvements in the formation of layers on silicon

Country Status (4)

Country Link
CH (1) CH490514A (en)
DE (1) DE1621300A1 (en)
GB (1) GB1203211A (en)
NL (1) NL6708533A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5845177B2 (en) * 1979-03-09 1983-10-07 富士通株式会社 Method for forming semiconductor surface insulating film

Also Published As

Publication number Publication date
DE1621300A1 (en) 1971-06-24
NL6708533A (en) 1967-12-27
CH490514A (en) 1970-05-15

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees