CH485867A - Method and device for depositing a refractory metal on a substrate - Google Patents

Method and device for depositing a refractory metal on a substrate

Info

Publication number
CH485867A
CH485867A CH874767A CH874767A CH485867A CH 485867 A CH485867 A CH 485867A CH 874767 A CH874767 A CH 874767A CH 874767 A CH874767 A CH 874767A CH 485867 A CH485867 A CH 485867A
Authority
CH
Switzerland
Prior art keywords
depositing
substrate
refractory metal
refractory
metal
Prior art date
Application number
CH874767A
Other languages
German (de)
Inventor
Inoue Morio
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of CH485867A publication Critical patent/CH485867A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CH874767A 1966-06-20 1967-06-20 Method and device for depositing a refractory metal on a substrate CH485867A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4089566 1966-06-20

Publications (1)

Publication Number Publication Date
CH485867A true CH485867A (en) 1970-02-15

Family

ID=12593229

Family Applications (1)

Application Number Title Priority Date Filing Date
CH874767A CH485867A (en) 1966-06-20 1967-06-20 Method and device for depositing a refractory metal on a substrate

Country Status (4)

Country Link
BE (1) BE700185A (en)
CH (1) CH485867A (en)
GB (1) GB1189344A (en)
NL (1) NL149232B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0241155A1 (en) * 1986-03-31 1987-10-14 Unisys Corporation Depositing vanadium underlayer for magnetic films

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2196019A (en) * 1986-10-07 1988-04-20 Cambridge Instr Ltd Metalorganic chemical vapour deposition
US4997677A (en) * 1987-08-31 1991-03-05 Massachusetts Institute Of Technology Vapor phase reactor for making multilayer structures
WO1990010092A1 (en) * 1989-02-24 1990-09-07 Massachusetts Institute Of Technology A modified stagnation flow apparatus for chemical vapor deposition providing excellent control of the deposition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0241155A1 (en) * 1986-03-31 1987-10-14 Unisys Corporation Depositing vanadium underlayer for magnetic films

Also Published As

Publication number Publication date
BE700185A (en) 1967-12-01
NL149232B (en) 1976-04-15
GB1189344A (en) 1970-04-22
DE1621289B2 (en) 1972-08-17
NL6708168A (en) 1967-12-21
DE1621289A1 (en) 1971-05-13

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Legal Events

Date Code Title Description
PL Patent ceased