CH483278A - Verfahren zur Herstellung von spannungsfreien und rissefreien Stäben aus hochreinem kristallinem Bor aus der Schmelze - Google Patents

Verfahren zur Herstellung von spannungsfreien und rissefreien Stäben aus hochreinem kristallinem Bor aus der Schmelze

Info

Publication number
CH483278A
CH483278A CH775265A CH775265A CH483278A CH 483278 A CH483278 A CH 483278A CH 775265 A CH775265 A CH 775265A CH 775265 A CH775265 A CH 775265A CH 483278 A CH483278 A CH 483278A
Authority
CH
Switzerland
Prior art keywords
free
crack
melt
stress
production
Prior art date
Application number
CH775265A
Other languages
English (en)
Inventor
Wirth Heinz Dr Dipl-Ing
Helmberger Hermann
Hans Dipl Ing Herrmann
Original Assignee
Consortium Elektrochem Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consortium Elektrochem Ind filed Critical Consortium Elektrochem Ind
Publication of CH483278A publication Critical patent/CH483278A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides
    • C01B35/023—Boron
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Manufacture And Refinement Of Metals (AREA)
CH775265A 1964-06-04 1965-06-03 Verfahren zur Herstellung von spannungsfreien und rissefreien Stäben aus hochreinem kristallinem Bor aus der Schmelze CH483278A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEC33044A DE1238450B (de) 1964-06-04 1964-06-04 Verfahren zum Herstellen von spannungsfreien und rissefreien Staeben aus hochreinem Bor aus der Schmelze

Publications (1)

Publication Number Publication Date
CH483278A true CH483278A (de) 1969-12-31

Family

ID=7020628

Family Applications (1)

Application Number Title Priority Date Filing Date
CH775265A CH483278A (de) 1964-06-04 1965-06-03 Verfahren zur Herstellung von spannungsfreien und rissefreien Stäben aus hochreinem kristallinem Bor aus der Schmelze

Country Status (8)

Country Link
US (1) US3434803A (de)
AT (1) AT258589B (de)
BE (1) BE664953A (de)
CH (1) CH483278A (de)
DE (1) DE1238450B (de)
GB (1) GB1106011A (de)
NL (1) NL6507080A (de)
SE (1) SE330375B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101222968B (zh) * 2005-05-17 2012-08-22 马普科技促进协会 通过基于氢的等离子体进行处理的材料净化

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1134967B (de) * 1954-03-02 1962-08-23 Siemens Ag Verfahren zum Ziehen eines stabfoermigen kristallinen Halbleiterkoerpers
BE548761A (de) * 1955-07-06 1900-01-01
NL103477C (de) * 1956-11-28
US2990261A (en) * 1958-12-11 1961-06-27 Bell Telephone Labor Inc Processing of boron compact
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt
US3154384A (en) * 1960-04-13 1964-10-27 Texas Instruments Inc Apparatus for growing compound semiconductor crystal
US3228756A (en) * 1960-05-20 1966-01-11 Transitron Electronic Corp Method of growing single crystal silicon carbide
DE1198322B (de) * 1961-05-12 1965-08-12 Intermetall Verfahren zum Herstellen von Einkristallen

Also Published As

Publication number Publication date
NL6507080A (de) 1965-12-06
AT258589B (de) 1967-12-11
DE1238450B (de) 1967-04-13
BE664953A (de) 1965-12-06
SE330375B (de) 1970-11-16
GB1106011A (en) 1968-03-13
US3434803A (en) 1969-03-25

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Legal Events

Date Code Title Description
PL Patent ceased