CH470761A - Halbleiteranordnung, insbesondere Transistor - Google Patents

Halbleiteranordnung, insbesondere Transistor

Info

Publication number
CH470761A
CH470761A CH1088765A CH1088765A CH470761A CH 470761 A CH470761 A CH 470761A CH 1088765 A CH1088765 A CH 1088765A CH 1088765 A CH1088765 A CH 1088765A CH 470761 A CH470761 A CH 470761A
Authority
CH
Switzerland
Prior art keywords
semiconductor arrangement
especially transistor
transistor
semiconductor
arrangement
Prior art date
Application number
CH1088765A
Other languages
English (en)
Inventor
Juergen Dr Schuetze Hans
Klaus Dr Hennings
Original Assignee
Telefunken Patent
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patent filed Critical Telefunken Patent
Publication of CH470761A publication Critical patent/CH470761A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
CH1088765A 1964-12-19 1965-08-03 Halbleiteranordnung, insbesondere Transistor CH470761A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1964T0027659 DE1439760B2 (de) 1964-12-19 1964-12-19 Transistor und verfahren zu seiner herstellung

Publications (1)

Publication Number Publication Date
CH470761A true CH470761A (de) 1969-03-31

Family

ID=7553643

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1088765A CH470761A (de) 1964-12-19 1965-08-03 Halbleiteranordnung, insbesondere Transistor

Country Status (5)

Country Link
US (1) US3947869A (de)
CH (1) CH470761A (de)
DE (1) DE1439760B2 (de)
GB (1) GB1133344A (de)
SE (1) SE334195B (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4396933A (en) * 1971-06-18 1983-08-02 International Business Machines Corporation Dielectrically isolated semiconductor devices

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2953730A (en) * 1952-11-07 1960-09-20 Rca Corp High frequency semiconductor devices
US3114663A (en) * 1960-03-29 1963-12-17 Rca Corp Method of providing semiconductor wafers with protective and masking coatings
US3159780A (en) * 1961-06-19 1964-12-01 Tektronix Inc Semiconductor bridge rectifier
US3220896A (en) * 1961-07-17 1965-11-30 Raytheon Co Transistor
US3210225A (en) * 1961-08-18 1965-10-05 Texas Instruments Inc Method of making transistor
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device
US3253197A (en) * 1962-06-21 1966-05-24 Amelco Inc Transistor having a relatively high inverse alpha
US3312881A (en) * 1963-11-08 1967-04-04 Ibm Transistor with limited area basecollector junction
US3309585A (en) * 1963-11-29 1967-03-14 Westinghouse Electric Corp Junction transistor structure with interdigitated configuration having features to minimize localized heating
CA952628A (en) * 1963-12-16 1974-08-06 David A. Maxwell Semiconductor structure and method
US3829889A (en) * 1963-12-16 1974-08-13 Signetics Corp Semiconductor structure
US3381182A (en) * 1964-10-19 1968-04-30 Philco Ford Corp Microcircuits having buried conductive layers
US3440498A (en) * 1966-03-14 1969-04-22 Nat Semiconductor Corp Contacts for insulation isolated semiconductor integrated circuitry

Also Published As

Publication number Publication date
SE334195B (de) 1971-04-19
DE1439760A1 (de) 1969-08-07
US3947869A (en) 1976-03-30
GB1133344A (en) 1968-11-13
DE1439760B2 (de) 1976-06-24

Similar Documents

Publication Publication Date Title
DK128388B (da) Halvlederkomponent.
DK100216C (da) Fastgørelsesindretning.
DK117084B (da) Halvlederkomponent.
CH428009A (de) Halbleiterelement
BR6571096D0 (pt) Dispositivos semicondutores
NL139416B (nl) Transistor.
AT269660B (de) Wohnfahrzeug, insbesondere Wohnanhänger
DK119264B (da) Lysfølsom halvlederkomponent.
DK111529B (da) Halvlederelement.
NL144789B (nl) Halfgeleiderlaser.
NL144439B (nl) Geintegreerde halfgeleiderketen.
AT302418B (de) Halbleitervorrichtung, insbesondere Transistor
CH453506A (de) Halbleiterbauelement
CH424995A (de) Halbleitervorrichtung
CH406446A (de) Halbleiterbauelement
CH422168A (de) Halbleiteranordnung
AT257810B (de) Lüfter, insbesondere Dachlüfter
NL139844B (nl) Bestuurbaar halfgeleiderbouwelement.
CH470761A (de) Halbleiteranordnung, insbesondere Transistor
NL142284B (nl) Halfgeleiderschakelinrichting.
NL142823B (nl) Halfgeleiderelement.
FR1440927A (fr) éléément semi-conducteur
DK117790B (da) Transistor.
NL143074B (nl) Transistor.
DK117162B (da) Halvlederorgan.