CH455960A - Halbleiteranordnung mit mindestens einer Gunn-Effekt-Vorrichtung - Google Patents

Halbleiteranordnung mit mindestens einer Gunn-Effekt-Vorrichtung

Info

Publication number
CH455960A
CH455960A CH1232966A CH1232966A CH455960A CH 455960 A CH455960 A CH 455960A CH 1232966 A CH1232966 A CH 1232966A CH 1232966 A CH1232966 A CH 1232966A CH 455960 A CH455960 A CH 455960A
Authority
CH
Switzerland
Prior art keywords
week
days
dial
areas
hand
Prior art date
Application number
CH1232966A
Other languages
German (de)
English (en)
French (fr)
Inventor
Peirson Foxell Clive Arthur
Gilbert Summers John
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH455960A publication Critical patent/CH455960A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N80/00—Bulk negative-resistance effect devices
    • H10N80/10—Gunn-effect devices
    • H10W20/40—
    • H10W72/90—
    • H10W72/536—
    • H10W72/5522—
    • H10W72/59—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/05—Etch and refill
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/15—Silicon on sapphire SOS

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
  • Electromechanical Clocks (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
  • Tires In General (AREA)
  • Non-Insulated Conductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
CH1232966A 1965-08-26 1966-08-25 Halbleiteranordnung mit mindestens einer Gunn-Effekt-Vorrichtung CH455960A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB36655/65A GB1161782A (en) 1965-08-26 1965-08-26 Improvements in Semiconductor Devices.

Publications (1)

Publication Number Publication Date
CH455960A true CH455960A (de) 1968-05-15

Family

ID=10390066

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1232966A CH455960A (de) 1965-08-26 1966-08-25 Halbleiteranordnung mit mindestens einer Gunn-Effekt-Vorrichtung

Country Status (11)

Country Link
US (1) US3443169A (member.php)
AT (1) AT269218B (member.php)
BE (1) BE686070A (member.php)
CH (1) CH455960A (member.php)
DE (1) DE1541505A1 (member.php)
DK (1) DK117164B (member.php)
ES (1) ES330535A1 (member.php)
FR (1) FR1517751A (member.php)
GB (1) GB1161782A (member.php)
NL (1) NL6611943A (member.php)
SE (1) SE338106B (member.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107017310B (zh) * 2017-03-17 2020-01-07 山东大学 一种高功率低噪音的平面耿氏二极管及其制备方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3534267A (en) * 1966-12-30 1970-10-13 Texas Instruments Inc Integrated 94 ghz. local oscillator and mixer
US3691481A (en) * 1967-08-22 1972-09-12 Kogyo Gijutsuin Negative resistance element
US3518749A (en) * 1968-02-23 1970-07-07 Rca Corp Method of making gunn-effect devices
NL6809255A (member.php) * 1968-06-29 1969-12-31
US3967305A (en) * 1969-03-27 1976-06-29 Mcdonnell Douglas Corporation Multichannel junction field-effect transistor and process
US3660733A (en) * 1969-10-29 1972-05-02 Fernando Zhozevich Vilf Homogeneous semiconductor with interrelated antibarrier contacts
US3755752A (en) * 1971-04-26 1973-08-28 Raytheon Co Back-to-back semiconductor high frequency device
US4238763A (en) * 1977-08-10 1980-12-09 National Research Development Corporation Solid state microwave devices with small active contact and large passive contact
DE2837283C2 (de) * 1978-08-25 1980-08-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Planare, in eine Wellenleitung eingefügte Schottky-Diode für hohe Grenzfrequenz

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL121810C (member.php) * 1955-11-04
US3065391A (en) * 1961-01-23 1962-11-20 Gen Electric Semiconductor devices
GB1070261A (en) * 1963-06-10 1967-06-01 Ibm A semiconductor device
US3290753A (en) * 1963-08-19 1966-12-13 Bell Telephone Labor Inc Method of making semiconductor integrated circuit elements
US3359504A (en) * 1964-03-25 1967-12-19 Westinghouse Electric Corp Inductanceless frequency selective signal system utilizing transport delay
US3322581A (en) * 1965-10-24 1967-05-30 Texas Instruments Inc Fabrication of a metal base transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107017310B (zh) * 2017-03-17 2020-01-07 山东大学 一种高功率低噪音的平面耿氏二极管及其制备方法

Also Published As

Publication number Publication date
SE338106B (member.php) 1971-08-30
GB1161782A (en) 1969-08-20
US3443169A (en) 1969-05-06
BE686070A (member.php) 1967-02-27
AT269218B (de) 1969-03-10
NL6611943A (member.php) 1967-02-27
DE1541505A1 (de) 1970-04-02
DK117164B (da) 1970-03-23
FR1517751A (fr) 1968-03-22
ES330535A1 (es) 1967-09-16

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