CH447125A - Verfahren zur Herstellung eines einkristallinen Metalloxyds, Siliciumoxyds oder Silikats - Google Patents

Verfahren zur Herstellung eines einkristallinen Metalloxyds, Siliciumoxyds oder Silikats

Info

Publication number
CH447125A
CH447125A CH1313863A CH1313863A CH447125A CH 447125 A CH447125 A CH 447125A CH 1313863 A CH1313863 A CH 1313863A CH 1313863 A CH1313863 A CH 1313863A CH 447125 A CH447125 A CH 447125A
Authority
CH
Switzerland
Prior art keywords
silicate
production
single crystal
crystal metal
metal oxide
Prior art date
Application number
CH1313863A
Other languages
English (en)
Inventor
Henderson Jack Kenneth
William Stephenson George
Original Assignee
Thermal Syndicate Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thermal Syndicate Ltd filed Critical Thermal Syndicate Ltd
Publication of CH447125A publication Critical patent/CH447125A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/12—Vaporous components, e.g. vapour-liquid-solid-growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10—Solid or liquid components, e.g. Verneuil method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/26—Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
CH1313863A 1963-03-19 1963-10-25 Verfahren zur Herstellung eines einkristallinen Metalloxyds, Siliciumoxyds oder Silikats CH447125A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB10739/63A GB1058773A (en) 1963-03-19 1963-03-19 Improvements in and relating to unicrystalline oxide material

Publications (1)

Publication Number Publication Date
CH447125A true CH447125A (de) 1967-11-30

Family

ID=9973402

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1313863A CH447125A (de) 1963-03-19 1963-10-25 Verfahren zur Herstellung eines einkristallinen Metalloxyds, Siliciumoxyds oder Silikats

Country Status (3)

Country Link
CH (1) CH447125A (de)
DE (1) DE1444544A1 (de)
GB (1) GB1058773A (de)

Also Published As

Publication number Publication date
GB1058773A (en) 1967-02-15
DE1444544A1 (de) 1968-10-24

Similar Documents

Publication Publication Date Title
CH477373A (de) Verfahren zur Herstellung eines durchsichtigen Gegenstandes aus glasigem Siliciumdioxyd
CH456021A (de) Verfahren zur Herstellung von wasserstoffhaltigem Spaltgas
CH437243A (de) Verfahren zur Herstellung von Äthylenoxyd
CH468967A (de) Verfahren zur Herstellung von Aminen
CH450386A (de) Verfahren zur Herstellung von Metallsalzen
CH491983A (de) Verfahren zur Herstellung von siliciumhaltigen Polyäthern
CH442255A (de) Verfahren zur Herstellung von Siliciumcarbid
CH456550A (de) Verfahren zur Herstellung von Wasserstoff
CH456963A (de) Verfahren zur Herstellung von fluorhaltigen Siliziumverbindungen
AT251219B (de) Verfahren zur Herstellung eines Glasbandes
CH454096A (de) Verfahren zur Herstellung von Monokristallen oder Bikristallen
CH447125A (de) Verfahren zur Herstellung eines einkristallinen Metalloxyds, Siliciumoxyds oder Silikats
AT244353B (de) Verfahren zur Herstellung von organischen Oniumfluoriden
CH470953A (de) Verfahren zur Herstellung von geformten Gebilden
CH454138A (de) Verfahren zur Herstellung neuer Zinnkomplexsalze
CH438234A (de) Verfahren zur Herstellung von Wasserstoff
CH467718A (de) Verfahren zur Herstellung von Wasserstoff
CH443253A (de) Verfahren zur Herstellung von Benzaldehyd
CH471437A (de) Verfahren zur Herstellung eines glasartigen Dielektrikums
AT254210B (de) Verfahren zur Herstellung von Oniumsalzen
AT257180B (de) Verfahren zur Herstellung eines Übergangsstückes
AT259749B (de) Verfahren zur Herstellung elastischer Waren
CH448108A (de) Verfahren zur Herstellung cyclischer Harnstoffe
CH429715A (de) Verfahren zur Herstellung neuer 4-Halogen-androstene
AT247834B (de) Verfahren zur Herstellung von Wasserstoff