CH442236A - Process for zone sublimation and subsequent condensation of a solid material - Google Patents

Process for zone sublimation and subsequent condensation of a solid material

Info

Publication number
CH442236A
CH442236A CH1135860A CH1135860A CH442236A CH 442236 A CH442236 A CH 442236A CH 1135860 A CH1135860 A CH 1135860A CH 1135860 A CH1135860 A CH 1135860A CH 442236 A CH442236 A CH 442236A
Authority
CH
Switzerland
Prior art keywords
solid material
subsequent condensation
zone sublimation
sublimation
zone
Prior art date
Application number
CH1135860A
Other languages
German (de)
Inventor
Avinor Michael
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH442236A publication Critical patent/CH442236A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CH1135860A 1959-10-13 1960-10-10 Process for zone sublimation and subsequent condensation of a solid material CH442236A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL244298 1959-10-13

Publications (1)

Publication Number Publication Date
CH442236A true CH442236A (en) 1967-08-31

Family

ID=19751976

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1135860A CH442236A (en) 1959-10-13 1960-10-10 Process for zone sublimation and subsequent condensation of a solid material

Country Status (6)

Country Link
CH (1) CH442236A (en)
DE (1) DE1240816B (en)
ES (1) ES261609A1 (en)
FR (1) FR1270317A (en)
GB (1) GB962166A (en)
NL (1) NL244298A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1258397B (en) * 1962-11-15 1968-01-11 Siemens Ag Method for producing a semiconductor arrangement by means of single-crystalline growth of semiconducting layers by means of a transport reaction
AU2001241197A1 (en) 2000-03-23 2001-10-03 Nippon Steel Chemical Co. Ltd. Sublimation purifying method and apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (en) * 1951-03-07 1900-01-01
NL168491B (en) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.
AT194444B (en) * 1953-02-26 1958-01-10 Siemens Ag Method and device for treating an elongated semiconductor crystal arrangement
DE1017795B (en) * 1954-05-25 1957-10-17 Siemens Ag Process for the production of the purest crystalline substances, preferably semiconductor substances

Also Published As

Publication number Publication date
NL244298A (en)
GB962166A (en) 1964-07-01
FR1270317A (en) 1961-08-25
DE1240816B (en) 1967-05-24
ES261609A1 (en) 1960-12-01

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