CH429949A - Feldeffekt-Transistor - Google Patents

Feldeffekt-Transistor

Info

Publication number
CH429949A
CH429949A CH1509463A CH1509463A CH429949A CH 429949 A CH429949 A CH 429949A CH 1509463 A CH1509463 A CH 1509463A CH 1509463 A CH1509463 A CH 1509463A CH 429949 A CH429949 A CH 429949A
Authority
CH
Switzerland
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Application number
CH1509463A
Other languages
German (de)
English (en)
Inventor
Robert Hofstein Steven
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US245086A external-priority patent/US3296508A/en
Application filed by Rca Corp filed Critical Rca Corp
Publication of CH429949A publication Critical patent/CH429949A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
    • B01J20/02—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material
    • B01J20/10—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising inorganic material comprising silica or silicate
    • B01J20/16—Alumino-silicates
    • B01J20/18—Synthetic zeolitic molecular sieves
    • B01J20/186—Chemical treatments in view of modifying the properties of the sieve, e.g. increasing the stability or the activity, also decreasing the activity
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C21/00—Alloys based on aluminium
    • C22C21/12—Alloys based on aluminium with copper as the next major constituent
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
    • F17C—VESSELS FOR CONTAINING OR STORING COMPRESSED, LIQUEFIED OR SOLIDIFIED GASES; FIXED-CAPACITY GAS-HOLDERS; FILLING VESSELS WITH, OR DISCHARGING FROM VESSELS, COMPRESSED, LIQUEFIED, OR SOLIDIFIED GASES
    • F17C1/00—Pressure vessels, e.g. gas cylinder, gas tank, replaceable cartridge
    • F17C1/14—Pressure vessels, e.g. gas cylinder, gas tank, replaceable cartridge constructed of aluminium; constructed of non-magnetic steel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/6309—
    • H10P14/6322—
    • H10P14/6334—
    • H10P14/6529—
    • H10P14/6923—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CH1509463A 1962-12-17 1963-12-10 Feldeffekt-Transistor CH429949A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US245086A US3296508A (en) 1962-12-17 1962-12-17 Field-effect transistor with reduced capacitance between gate and channel
US573123A US3333168A (en) 1962-12-17 1966-08-17 Unipolar transistor having plurality of insulated gate-electrodes on same side

Publications (1)

Publication Number Publication Date
CH429949A true CH429949A (de) 1967-02-15

Family

ID=26936983

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1509463A CH429949A (de) 1962-12-17 1963-12-10 Feldeffekt-Transistor

Country Status (10)

Country Link
US (1) US3333168A (enExample)
BE (1) BE641360A (enExample)
CH (1) CH429949A (enExample)
DE (1) DE1464395C3 (enExample)
DK (1) DK111366B (enExample)
FR (1) FR1377764A (enExample)
GB (1) GB1044070A (enExample)
NL (1) NL301884A (enExample)
NO (1) NO116329B (enExample)
SE (1) SE313878B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1136569A (en) * 1965-12-22 1968-12-11 Mullard Ltd Insulated gate field effect transistors
US3454844A (en) * 1966-07-01 1969-07-08 Hughes Aircraft Co Field effect device with overlapping insulated gates
US3573571A (en) * 1967-10-13 1971-04-06 Gen Electric Surface-diffused transistor with isolated field plate
US3546493A (en) * 1968-09-20 1970-12-08 Gen Motors Corp Variable capacitance direct current regulator circuit
CH477779A (de) * 1968-12-20 1969-08-31 Ibm Verzögerungseinrichtung für elektrische Signale
US3593071A (en) * 1969-04-04 1971-07-13 Ncr Co Pointed gate semiconductor device
US3651349A (en) * 1970-02-16 1972-03-21 Bell Telephone Labor Inc Monolithic semiconductor apparatus adapted for sequential charge transfer
US3764865A (en) * 1970-03-17 1973-10-09 Rca Corp Semiconductor devices having closely spaced contacts
US3707656A (en) * 1971-02-19 1972-12-26 Ibm Transistor comprising layers of silicon dioxide and silicon nitride
JPS5145438B1 (enExample) * 1971-06-25 1976-12-03
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
US5079620A (en) * 1989-01-09 1992-01-07 Regents Of The University Of Minnesota Split-gate field effect transistor
US5012315A (en) * 1989-01-09 1991-04-30 Regents Of University Of Minnesota Split-gate field effect transistor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1037293A (fr) * 1951-05-19 1953-09-15 Licentia Gmbh Redresseur sec à contrôle électrique et son procédé de fabrication
NL282170A (enExample) * 1961-08-17

Also Published As

Publication number Publication date
DE1464395C3 (de) 1975-01-16
SE313878B (enExample) 1969-08-25
BE641360A (enExample)
NO116329B (enExample) 1969-03-10
DK111366B (da) 1968-08-05
NL301884A (enExample)
US3333168A (en) 1967-07-25
DE1464395A1 (de) 1969-03-06
DE1464395B2 (de) 1970-08-06
GB1044070A (en) 1966-09-28
FR1377764A (fr) 1964-11-06

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