CH422166A - Verfahren zur Erhöhung der Sperrspannung thermisch oxydierter Siliziumkörper mit mindestens einer Sperrschicht - Google Patents

Verfahren zur Erhöhung der Sperrspannung thermisch oxydierter Siliziumkörper mit mindestens einer Sperrschicht

Info

Publication number
CH422166A
CH422166A CH586765A CH586765A CH422166A CH 422166 A CH422166 A CH 422166A CH 586765 A CH586765 A CH 586765A CH 586765 A CH586765 A CH 586765A CH 422166 A CH422166 A CH 422166A
Authority
CH
Switzerland
Prior art keywords
increasing
barrier layer
reverse voltage
thermally oxidized
oxidized silicon
Prior art date
Application number
CH586765A
Other languages
English (en)
Inventor
Dieter Dr Jahn
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH586765A priority Critical patent/CH422166A/de
Priority to DE19651489631 priority patent/DE1489631A1/de
Priority to US541676A priority patent/US3476661A/en
Priority to NL6604823A priority patent/NL6604823A/xx
Priority to FR58850A priority patent/FR1477210A/fr
Priority to GB18000/66A priority patent/GB1068978A/en
Publication of CH422166A publication Critical patent/CH422166A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02—Anodisation
    • C25D11/32—Anodisation of semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
CH586765A 1965-04-27 1965-04-27 Verfahren zur Erhöhung der Sperrspannung thermisch oxydierter Siliziumkörper mit mindestens einer Sperrschicht CH422166A (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CH586765A CH422166A (de) 1965-04-27 1965-04-27 Verfahren zur Erhöhung der Sperrspannung thermisch oxydierter Siliziumkörper mit mindestens einer Sperrschicht
DE19651489631 DE1489631A1 (de) 1965-04-27 1965-05-21 Verfahren zur Erhoehung der Sperrspannung thermisch oxydierter Siliziumkoerper mit mindestens einer Sperrschicht
US541676A US3476661A (en) 1965-04-27 1966-04-11 Process for increasing the reverse voltage of thermally oxidized silicon members with at least one barrier layer
NL6604823A NL6604823A (de) 1965-04-27 1966-04-12
FR58850A FR1477210A (fr) 1965-04-27 1966-04-25 Procédé pour l'accroissement de la barrière de potentiel de corps en silicium oxydés par voie thermique, avec au moins une couche de barrage
GB18000/66A GB1068978A (en) 1965-04-27 1966-04-25 Process for increasing the reverse voltage of thermally oxidised silicon members with at least one barrier layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH586765A CH422166A (de) 1965-04-27 1965-04-27 Verfahren zur Erhöhung der Sperrspannung thermisch oxydierter Siliziumkörper mit mindestens einer Sperrschicht

Publications (1)

Publication Number Publication Date
CH422166A true CH422166A (de) 1966-10-15

Family

ID=4300627

Family Applications (1)

Application Number Title Priority Date Filing Date
CH586765A CH422166A (de) 1965-04-27 1965-04-27 Verfahren zur Erhöhung der Sperrspannung thermisch oxydierter Siliziumkörper mit mindestens einer Sperrschicht

Country Status (5)

Country Link
US (1) US3476661A (de)
CH (1) CH422166A (de)
DE (1) DE1489631A1 (de)
GB (1) GB1068978A (de)
NL (1) NL6604823A (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0400387B1 (de) * 1989-05-31 1996-02-21 Siemens Aktiengesellschaft Verfahren zum grossflächigen elektrischen Kontaktieren eines Halbleiterkristallkörpers mit Hilfe von Elektrolyten
JP4556576B2 (ja) * 2004-09-13 2010-10-06 トヨタ自動車株式会社 セパレータの製造方法および電着塗装装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2868702A (en) * 1952-11-04 1959-01-13 Helen E Brennan Method of forming a dielectric oxide film on a metal strip
US2995502A (en) * 1957-10-07 1961-08-08 Reynolds Metals Co Conditioning and anodizing system
US2974097A (en) * 1957-11-12 1961-03-07 Reynolds Metals Co Electrolytic means for treating metal
NL280871A (de) * 1961-08-19
US3365378A (en) * 1963-12-31 1968-01-23 Ibm Method of fabricating film-forming metal capacitors

Also Published As

Publication number Publication date
GB1068978A (en) 1967-05-17
US3476661A (en) 1969-11-04
NL6604823A (de) 1966-10-28
DE1489631A1 (de) 1969-09-04

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