CH422166A - Verfahren zur Erhöhung der Sperrspannung thermisch oxydierter Siliziumkörper mit mindestens einer Sperrschicht - Google Patents
Verfahren zur Erhöhung der Sperrspannung thermisch oxydierter Siliziumkörper mit mindestens einer SperrschichtInfo
- Publication number
- CH422166A CH422166A CH586765A CH586765A CH422166A CH 422166 A CH422166 A CH 422166A CH 586765 A CH586765 A CH 586765A CH 586765 A CH586765 A CH 586765A CH 422166 A CH422166 A CH 422166A
- Authority
- CH
- Switzerland
- Prior art keywords
- increasing
- barrier layer
- reverse voltage
- thermally oxidized
- oxidized silicon
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 230000004888 barrier function Effects 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
- Weting (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH586765A CH422166A (de) | 1965-04-27 | 1965-04-27 | Verfahren zur Erhöhung der Sperrspannung thermisch oxydierter Siliziumkörper mit mindestens einer Sperrschicht |
DE19651489631 DE1489631A1 (de) | 1965-04-27 | 1965-05-21 | Verfahren zur Erhoehung der Sperrspannung thermisch oxydierter Siliziumkoerper mit mindestens einer Sperrschicht |
US541676A US3476661A (en) | 1965-04-27 | 1966-04-11 | Process for increasing the reverse voltage of thermally oxidized silicon members with at least one barrier layer |
NL6604823A NL6604823A (de) | 1965-04-27 | 1966-04-12 | |
GB18000/66A GB1068978A (en) | 1965-04-27 | 1966-04-25 | Process for increasing the reverse voltage of thermally oxidised silicon members with at least one barrier layer |
FR58850A FR1477210A (fr) | 1965-04-27 | 1966-04-25 | Procédé pour l'accroissement de la barrière de potentiel de corps en silicium oxydés par voie thermique, avec au moins une couche de barrage |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH586765A CH422166A (de) | 1965-04-27 | 1965-04-27 | Verfahren zur Erhöhung der Sperrspannung thermisch oxydierter Siliziumkörper mit mindestens einer Sperrschicht |
Publications (1)
Publication Number | Publication Date |
---|---|
CH422166A true CH422166A (de) | 1966-10-15 |
Family
ID=4300627
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH586765A CH422166A (de) | 1965-04-27 | 1965-04-27 | Verfahren zur Erhöhung der Sperrspannung thermisch oxydierter Siliziumkörper mit mindestens einer Sperrschicht |
Country Status (5)
Country | Link |
---|---|
US (1) | US3476661A (de) |
CH (1) | CH422166A (de) |
DE (1) | DE1489631A1 (de) |
GB (1) | GB1068978A (de) |
NL (1) | NL6604823A (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE59010140D1 (de) * | 1989-05-31 | 1996-03-28 | Siemens Ag | Verfahren zum grossflächigen elektrischen Kontaktieren eines Halbleiterkristallkörpers mit Hilfe von Elektrolyten |
JP4556576B2 (ja) * | 2004-09-13 | 2010-10-06 | トヨタ自動車株式会社 | セパレータの製造方法および電着塗装装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2868702A (en) * | 1952-11-04 | 1959-01-13 | Helen E Brennan | Method of forming a dielectric oxide film on a metal strip |
US2995502A (en) * | 1957-10-07 | 1961-08-08 | Reynolds Metals Co | Conditioning and anodizing system |
US2974097A (en) * | 1957-11-12 | 1961-03-07 | Reynolds Metals Co | Electrolytic means for treating metal |
NL280871A (de) * | 1961-08-19 | |||
US3365378A (en) * | 1963-12-31 | 1968-01-23 | Ibm | Method of fabricating film-forming metal capacitors |
-
1965
- 1965-04-27 CH CH586765A patent/CH422166A/de unknown
- 1965-05-21 DE DE19651489631 patent/DE1489631A1/de active Pending
-
1966
- 1966-04-11 US US541676A patent/US3476661A/en not_active Expired - Lifetime
- 1966-04-12 NL NL6604823A patent/NL6604823A/xx unknown
- 1966-04-25 GB GB18000/66A patent/GB1068978A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1489631A1 (de) | 1969-09-04 |
NL6604823A (de) | 1966-10-28 |
US3476661A (en) | 1969-11-04 |
GB1068978A (en) | 1967-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CH474771A (de) | Einrichtung zur digitalen Steuerung der Richtung oder der Länge von Lichtstrahlen | |
CH463753A (de) | Bauelement in Art einer Säule | |
DK132546B (da) | Fremgangsmåde til fremstilling af en genstand med en nubret eller på lignende måde ujævn overfladestruktur. | |
CH457782A (de) | Fassung mit mindestens einer aus Glaselementen bestehenden Einbaueinheit | |
CH464378A (de) | Verfahren zur Bildung von supraleitenden Materialien | |
CH422166A (de) | Verfahren zur Erhöhung der Sperrspannung thermisch oxydierter Siliziumkörper mit mindestens einer Sperrschicht | |
CH481507A (de) | Stromrichter mit einer Ventilgruppe | |
CH509393A (de) | Mit einer Klebstoffschicht versehenes Substrat | |
CH483727A (de) | Halbleiterelement mit mindestens einer Steuerelektrode | |
FR1412270A (fr) | éliminateur de couche limite | |
AT299309B (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
CH493936A (de) | Halbleiteranordnung und Verfahren zur Herstellung der Halbleiteranordnung | |
AT324151B (de) | Mit mindestens einer schiiesswandung versehenes schliessstück | |
BR6906921D0 (pt) | Processo para fabricacao de revestimentos inteiricos para soalhos e respectivos revestimentos | |
CH522960A (de) | Halbleiteranordnung mit wenigstens einer Isolationsschicht | |
AT315917B (de) | Planartransistor mit vergrabener Schicht | |
CH387678A (de) | Lager für Brücken und dergleichen Tragwerke mit einer Gleitplatte aus Kunststoff | |
CH467389A (de) | Bauelement zur seitlichen Begrenzung einer Fahrbahn | |
CH470760A (de) | Verfahren zur Herstellung einer Halbleitervorrichtung | |
AT303759B (de) | Verfahren zur Herstellung von Organosilicium-Verbindungen mit mindestens einer Silicium-Kohlenstoff-Bindung | |
CH480448A (de) | Verfahren zur Ausbildung einer dünnen Schicht | |
AT259830B (de) | Außenwandelement und Verfahren zur Herstellung desselben | |
CH495069A (de) | Supraleiter mit einer Nb-3Sn-Schicht an der Oberfläche | |
BR6914388D0 (pt) | Composicao para remocao de camadas de liquidos aquosos sobre superficies metalicas | |
SE343289B (sv) | Saett att framstaella beklaednadsplattor samt enligt saettet framstaellda plattor |