CH406157A - Verfahren zur Herstellung eines Stabes aus niederohmigem Halbleitermaterial - Google Patents

Verfahren zur Herstellung eines Stabes aus niederohmigem Halbleitermaterial

Info

Publication number
CH406157A
CH406157A CH7811159A CH7811159A CH406157A CH 406157 A CH406157 A CH 406157A CH 7811159 A CH7811159 A CH 7811159A CH 7811159 A CH7811159 A CH 7811159A CH 406157 A CH406157 A CH 406157A
Authority
CH
Switzerland
Prior art keywords
rod
production
low
semiconductor material
resistance semiconductor
Prior art date
Application number
CH7811159A
Other languages
German (de)
English (en)
Inventor
Arnulf Dr Hoffmann
Wolfgang Dr Keller
Konrad Dr Reuschel
Theodor Dr Rummel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH406157A publication Critical patent/CH406157A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/04—Homogenisation by zone-levelling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06M—TREATMENT, NOT PROVIDED FOR ELSEWHERE IN CLASS D06, OF FIBRES, THREADS, YARNS, FABRICS, FEATHERS OR FIBROUS GOODS MADE FROM SUCH MATERIALS
    • D06M13/00—Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with non-macromolecular organic compounds; Such treatment combined with mechanical treatment
    • D06M13/10—Treating fibres, threads, yarns, fabrics or fibrous goods made from such materials, with non-macromolecular organic compounds; Such treatment combined with mechanical treatment with compounds containing oxygen
    • D06M13/12—Aldehydes; Ketones
    • D06M13/123—Polyaldehydes; Polyketones
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S252/00—Compositions
    • Y10S252/95—Doping agent source material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Textile Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Glass Compositions (AREA)
CH7811159A 1958-09-20 1959-09-11 Verfahren zur Herstellung eines Stabes aus niederohmigem Halbleitermaterial CH406157A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES59920A DE1153540B (de) 1958-09-20 1958-09-20 Verfahren zur Herstellung eines Stabes aus Halbleitermaterial
DES0065086 1959-09-24

Publications (1)

Publication Number Publication Date
CH406157A true CH406157A (de) 1966-01-31

Family

ID=25995578

Family Applications (2)

Application Number Title Priority Date Filing Date
CH7811159A CH406157A (de) 1958-09-20 1959-09-11 Verfahren zur Herstellung eines Stabes aus niederohmigem Halbleitermaterial
CH948260A CH434213A (de) 1958-09-20 1960-08-22 Verfahren zur Herstellung eines Stabes aus niederohmigem Halbleitermaterial für elektrische Halbleiteranordnungen

Family Applications After (1)

Application Number Title Priority Date Filing Date
CH948260A CH434213A (de) 1958-09-20 1960-08-22 Verfahren zur Herstellung eines Stabes aus niederohmigem Halbleitermaterial für elektrische Halbleiteranordnungen

Country Status (8)

Country Link
US (1) US2970111A (OSRAM)
BE (2) BE582787A (OSRAM)
CH (2) CH406157A (OSRAM)
DE (3) DE1153540B (OSRAM)
FR (1) FR1234485A (OSRAM)
GB (2) GB919837A (OSRAM)
NL (3) NL126632C (OSRAM)
SE (1) SE307992B (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3172857A (en) * 1960-06-14 1965-03-09 Method for probucmg homogeneously boped monocrystalline bodies of ele- mental semiconductors
NL266156A (OSRAM) * 1960-06-24
US3141849A (en) * 1960-07-04 1964-07-21 Wacker Chemie Gmbh Process for doping materials
US3179593A (en) * 1960-09-28 1965-04-20 Siemens Ag Method for producing monocrystalline semiconductor material
DE1156384B (de) * 1960-12-23 1963-10-31 Wacker Chemie Gmbh Verfahren zum Dotieren von hochreinen Stoffen
NL276635A (OSRAM) * 1961-03-31
DE1419656B2 (de) * 1961-05-16 1972-04-20 Siemens AG, 1000 Berlin u 8000 München Verfahren zum dotieren eines stabfoermigen koerpers aus halbleitermaterial, insbesondere aus silicium, mit bor
US3125533A (en) * 1961-08-04 1964-03-17 Liquid
US3170882A (en) * 1963-11-04 1965-02-23 Merck & Co Inc Process for making semiconductors of predetermined resistivities
DE2447691C2 (de) * 1974-10-07 1982-08-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von reinem Silicium
US4040890A (en) * 1975-06-27 1977-08-09 Bell Telephone Laboratories, Incorporated Neodymium oxide doped yttrium aluminum garnet optical fiber
DE102004038718A1 (de) * 2004-08-10 2006-02-23 Joint Solar Silicon Gmbh & Co. Kg Reaktor sowie Verfahren zur Herstellung von Silizium

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2438892A (en) * 1943-07-28 1948-04-06 Bell Telephone Labor Inc Electrical translating materials and devices and methods of making them
US2441603A (en) * 1943-07-28 1948-05-18 Bell Telephone Labor Inc Electrical translating materials and method of making them
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2785095A (en) * 1953-04-01 1957-03-12 Rca Corp Semi-conductor devices and methods of making same
GB778383A (en) * 1953-10-02 1957-07-03 Standard Telephones Cables Ltd Improvements in or relating to the production of material for semi-conductors
NL113118C (OSRAM) * 1954-05-18 1900-01-01
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
NL99619C (OSRAM) * 1955-06-28

Also Published As

Publication number Publication date
DE1719025A1 (OSRAM) 1900-01-01
NL242264A (OSRAM) 1900-01-01
BE582787A (OSRAM) 1900-01-01
DE1153540B (de) 1963-08-29
FR1234485A (fr) 1960-10-17
NL255390A (OSRAM) 1900-01-01
NL126632C (OSRAM) 1900-01-01
BE595351A (OSRAM) 1900-01-01
DE1719024A1 (de) 1970-12-10
SE307992B (OSRAM) 1969-01-27
CH434213A (de) 1967-04-30
DE1719024B2 (de) 1971-07-01
GB919837A (en) 1963-02-27
US2970111A (en) 1961-01-31
GB925106A (en) 1963-05-01

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