CH390399A - Verfahren zur Dotierung von Halbleiterkörpern mit Bor als Störstellensubstanz - Google Patents

Verfahren zur Dotierung von Halbleiterkörpern mit Bor als Störstellensubstanz

Info

Publication number
CH390399A
CH390399A CH29961A CH29961A CH390399A CH 390399 A CH390399 A CH 390399A CH 29961 A CH29961 A CH 29961A CH 29961 A CH29961 A CH 29961A CH 390399 A CH390399 A CH 390399A
Authority
CH
Switzerland
Prior art keywords
boron
semiconductor bodies
doping semiconductor
impurity substance
impurity
Prior art date
Application number
CH29961A
Other languages
German (de)
English (en)
Inventor
Udo Dipl Ing Lob
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH390399A publication Critical patent/CH390399A/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50Alloying conductive materials with semiconductor bodies
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/16Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a liquid phase
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Silicon Compounds (AREA)
CH29961A 1960-03-24 1961-01-10 Verfahren zur Dotierung von Halbleiterkörpern mit Bor als Störstellensubstanz CH390399A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES67707A DE1242192B (de) 1960-03-24 1960-03-24 Verfahren zum Dotieren eines Halbleiterkoerpers

Publications (1)

Publication Number Publication Date
CH390399A true CH390399A (de) 1965-04-15

Family

ID=7499742

Family Applications (1)

Application Number Title Priority Date Filing Date
CH29961A CH390399A (de) 1960-03-24 1961-01-10 Verfahren zur Dotierung von Halbleiterkörpern mit Bor als Störstellensubstanz

Country Status (4)

Country Link
CH (1) CH390399A (enExample)
DE (1) DE1242192B (enExample)
GB (1) GB914293A (enExample)
NL (2) NL259797A (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB794674A (en) * 1954-08-31 1958-05-07 Gen Electric Co Ltd Improvements in or relating to methods of forming a junction in a semiconductor
NL215386A (enExample) * 1956-03-30

Also Published As

Publication number Publication date
NL122606C (enExample)
DE1242192B (de) 1967-06-15
GB914293A (en) 1963-01-02
NL259797A (enExample)

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