CH327896A - Process for producing an impurity semiconductor material of high conductivity - Google Patents

Process for producing an impurity semiconductor material of high conductivity

Info

Publication number
CH327896A
CH327896A CH327896DA CH327896A CH 327896 A CH327896 A CH 327896A CH 327896D A CH327896D A CH 327896DA CH 327896 A CH327896 A CH 327896A
Authority
CH
Switzerland
Prior art keywords
producing
semiconductor material
high conductivity
impurity semiconductor
impurity
Prior art date
Application number
Other languages
German (de)
Inventor
Erich Dipl Ing Nitsche
Ekkehard Dipl Ing Schillmann
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH327896A publication Critical patent/CH327896A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
CH327896D 1953-07-16 1954-07-06 Process for producing an impurity semiconductor material of high conductivity CH327896A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE327896X 1953-07-16

Publications (1)

Publication Number Publication Date
CH327896A true CH327896A (en) 1958-02-15

Family

ID=6185439

Family Applications (1)

Application Number Title Priority Date Filing Date
CH327896D CH327896A (en) 1953-07-16 1954-07-06 Process for producing an impurity semiconductor material of high conductivity

Country Status (2)

Country Link
CH (1) CH327896A (en)
GB (1) GB790213A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1125080B (en) * 1960-05-02 1962-03-08 Licentia Gmbh Process for the production of selenium dry rectifiers
DE1922140B2 (en) * 1969-04-25 1976-08-26 Siemens AG, 1000 Berlin und 8000 München METHOD OF MANUFACTURING A SELENIUM RECTIFIER

Also Published As

Publication number Publication date
GB790213A (en) 1958-02-05

Similar Documents

Publication Publication Date Title
CH355220A (en) Process for the production of a crystallized semiconductor material
CH384082A (en) Process for the production of semiconductor devices
CH417543A (en) Process for the production of rods from semiconductor substance
CH422727A (en) Method for manufacturing a semiconductor material
CH333525A (en) Process for the production of an acrylonitrile copolymer
CH360457A (en) Process for the production of shaped structures from viscose
CH327896A (en) Process for producing an impurity semiconductor material of high conductivity
FR1113326A (en) Process for preparing fluoropolymers
FR1115968A (en) Process for preparing tetrafluoroethylene
AT169816B (en) Process for the production of shaped bodies from high density tungsten alloys
CH321139A (en) Process for the production of direct positives
CH313769A (en) Process for the production of amino alcohols
AT185455B (en) Process for the production of an electro-luminescent powder
CH329365A (en) Process for the production of isopropyl nitrate
CH368159A (en) Process for the production of basic carbinols
CH332837A (en) Process for the direct production of positives
CH324874A (en) Process for the manufacture of selenium rectifiers
AT183870B (en) Process for the manufacture of new anti-tuberculotics
CH322623A (en) Process for the production of new addition compounds
CH332637A (en) Process for the production of semiconductor layer crystals
FR1216904A (en) Process for the preparation of substituted cyclohexylamines
AT190051B (en) Process for the production of new γ-acyl butyric acids
AT185887B (en) Process for the production of a phosphor
CH319852A (en) Process for achieving high scale resistance of metallic objects
AT187513B (en) Process for the production of high-melting hard materials