CH322460A - Verfahren zur Herstellung von P-N-Grenzschichten in Halbleiterkörpern und danach hergestellte Halbleitereinrichtung - Google Patents
Verfahren zur Herstellung von P-N-Grenzschichten in Halbleiterkörpern und danach hergestellte HalbleitereinrichtungInfo
- Publication number
- CH322460A CH322460A CH322460DA CH322460A CH 322460 A CH322460 A CH 322460A CH 322460D A CH322460D A CH 322460DA CH 322460 A CH322460 A CH 322460A
- Authority
- CH
- Switzerland
- Prior art keywords
- interfaces
- producing
- semiconductor
- produced therefrom
- device produced
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US322460XA | 1952-09-16 | 1952-09-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH322460A true CH322460A (de) | 1957-06-15 |
Family
ID=21863887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH322460D CH322460A (de) | 1952-09-16 | 1953-09-15 | Verfahren zur Herstellung von P-N-Grenzschichten in Halbleiterkörpern und danach hergestellte Halbleitereinrichtung |
Country Status (6)
Country | Link |
---|---|
BE (1) | BE522837A (sh) |
CH (1) | CH322460A (sh) |
DE (1) | DE1015937B (sh) |
FR (1) | FR1090012A (sh) |
GB (1) | GB743608A (sh) |
NL (1) | NL91163C (sh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1085612B (de) * | 1958-10-17 | 1960-07-21 | Bbc Brown Boveri & Cie | Legierungsverfahren zum Herstellen von Halbleitergleichrichtern |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE547698A (sh) * | 1955-05-10 | 1900-01-01 | ||
NL258203A (sh) * | 1960-11-21 | |||
BE632279A (sh) * | 1962-05-14 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2765245A (en) * | 1952-08-22 | 1956-10-02 | Gen Electric | Method of making p-n junction semiconductor units |
-
0
- NL NL91163D patent/NL91163C/xx active
- BE BE522837D patent/BE522837A/xx unknown
-
1953
- 1953-08-05 FR FR1090012D patent/FR1090012A/fr not_active Expired
- 1953-09-07 GB GB24676/53A patent/GB743608A/en not_active Expired
- 1953-09-15 CH CH322460D patent/CH322460A/de unknown
- 1953-09-16 DE DER12565A patent/DE1015937B/de active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1085612B (de) * | 1958-10-17 | 1960-07-21 | Bbc Brown Boveri & Cie | Legierungsverfahren zum Herstellen von Halbleitergleichrichtern |
Also Published As
Publication number | Publication date |
---|---|
BE522837A (sh) | |
FR1090012A (fr) | 1955-03-25 |
DE1015937B (de) | 1957-09-19 |
NL91163C (sh) | |
GB743608A (en) | 1956-01-18 |
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