CH272579A - Verfahren zum elektrolytischen Niederschlagen von metallischem Selen. - Google Patents
Verfahren zum elektrolytischen Niederschlagen von metallischem Selen.Info
- Publication number
- CH272579A CH272579A CH272579DA CH272579A CH 272579 A CH272579 A CH 272579A CH 272579D A CH272579D A CH 272579DA CH 272579 A CH272579 A CH 272579A
- Authority
- CH
- Switzerland
- Prior art keywords
- electrolytic deposition
- metallic selenium
- selenium
- metallic
- electrolytic
- Prior art date
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title 1
- 230000008021 deposition Effects 0.000 title 1
- 229910052711 selenium Inorganic materials 0.000 title 1
- 239000011669 selenium Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
- H01L21/101—Application of the selenium or tellurium to the foundation plate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/10—Preliminary treatment of the selenium or tellurium, its application to the foundation plate, or the subsequent treatment of the combination
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electrodes For Compound Or Non-Metal Manufacture (AREA)
- Electrolytic Production Of Metals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US467562A US2414438A (en) | 1942-12-01 | 1942-12-01 | Electrodeposition of selenium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CH272579A true CH272579A (de) | 1950-12-31 |
Family
ID=23856208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CH272579D CH272579A (de) | 1942-12-01 | 1947-09-15 | Verfahren zum elektrolytischen Niederschlagen von metallischem Selen. |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US2414438A (de) |
| CH (1) | CH272579A (de) |
| GB (1) | GB579851A (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE465046A (de) * | 1944-09-02 | 1900-01-01 | ||
| US2568780A (en) * | 1947-03-01 | 1951-09-25 | Standard Telephones Cables Ltd | Rectifier manufacturing process and products obtained thereby |
| US2572079A (en) * | 1947-03-13 | 1951-10-23 | Standard Telephones Cables Ltd | Radiation-sensitive cells and method of making same |
| US2649410A (en) * | 1948-06-10 | 1953-08-18 | Standard Telephones Cables Ltd | Electrodeposition of selenium |
| US2715151A (en) * | 1953-07-14 | 1955-08-09 | Electro Acid Corp | Electric storage battery and method |
| US4452675A (en) * | 1982-10-18 | 1984-06-05 | Allied Corporation | Process for the activation of nickel electrodes via the electrochemical deposition of selenium and/or tellurium |
| DE102005046908A1 (de) * | 2005-09-30 | 2007-04-05 | Merck Patent Gmbh | Elektrochemische Abscheidung von Selen in ionischen Flüssigkeiten |
| CN102703946A (zh) * | 2012-06-21 | 2012-10-03 | 河海大学 | 一种半导体硒膜的制备方法 |
-
1942
- 1942-12-01 US US467562A patent/US2414438A/en not_active Expired - Lifetime
-
1943
- 1943-11-26 GB GB19830/43A patent/GB579851A/en not_active Expired
-
1947
- 1947-09-15 CH CH272579D patent/CH272579A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US2414438A (en) | 1947-01-21 |
| GB579851A (en) | 1946-08-19 |
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