CH229963A - Method for connecting an electrical supply conductor to part of an electrical device, in particular a barrier rectifier. - Google Patents

Method for connecting an electrical supply conductor to part of an electrical device, in particular a barrier rectifier.

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Publication number
CH229963A
CH229963A CH229963DA CH229963A CH 229963 A CH229963 A CH 229963A CH 229963D A CH229963D A CH 229963DA CH 229963 A CH229963 A CH 229963A
Authority
CH
Switzerland
Prior art keywords
electrical
supply conductor
barrier rectifier
contact
wire
Prior art date
Application number
Other languages
German (de)
Inventor
Gloeilampenfabrieken N Philips
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of CH229963A publication Critical patent/CH229963A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Description

       

  Verfahren zum     AnschluB    eines elektrischen Zuführungsleiters an     einen    Teil eines  elektrischen Gerätes,     insbesondere    eines     Sperrschichtgleichrichters.       Die vorliegende Erfindung bezieht sich  auf ein Verfahren zum Anschluss eines elek  trischen Zuführungsleiters au einen Teil eines  elektrischen     Gerätes-,    insbesondere eines       Sperrsehichtgleichrichters.     



  Bei elektrischen Geräten, zum Beispiel       Sperrschichtgleichrichtern,deren    Teile, zum  Beispiel Elektroden, oft geringe Abmessun  gen aufweisen, tritt die Schwierigkeit auf, in  der Massenherstellung einen Zuführungs  leiter schnell und sicher mit einer Elektrode  des Systems zu verbinden.

   Das Löten ist  umständlich und es besteht     die    Gefahr der       Beschä.d        bog    des     Elektrodensystems.    Letz  terer     Nachteil    kann ebenfalls bei der Anwen  dung des bekannten     Punktschweissverfahrens     auftreten, bei dem die beiden zu verbinden  den Teile     zwischen    die     Elektroden    eines  Schweissapparates gebracht werden.  



  Diese Nachteile können bei dem erfin  dungsgemässen Verfahren vermieden werden.  Das Verfahren besteht darin, dass .der Zu  führungsleiter mittels einer     Punktschweissung       mit der     Anschlussfläche    des     Geräteteils    ver  bunden wird, wobei der     Zuführungsleiter          @selbst    als Schweisselektrode dient und     nach     folgender     Schweissung    mit der     Kontaktstelle          verbunden.    bleibt.  



  Es wird demnach von der Erscheinung  Gebrauch gemacht,     dass    die Elektrode selbst  an dem Werkstück festgeschweisst wird,     wenn     man einen Stromstoss durchgehen lässt, der  ausreicht, um die Spitze der Elektrode und  die     darunterliegende    Oberfläche des Werk  stückes     (infolge    des     Übergangswiderstandes)          stellenweise    zum Fliessen zu bringen, und  wenn man die     Elektrode    in .diesem Zustande       akühlen    lässt.

   Der     Zuführungsdraht        kann     nach dem Aufschweissen auf die erforderliche  Länge     abgeschnitten    werden.  



  Es hat sich     ergeben,        dass    man beim.       erf        indungs.gemässen    Verfahren mehr oder  weniger verwickelte Geräte     zum        Pesthalten     des Werkstückes und zum     Andrücken    der  Elektroden, welche     Geräte        bei        Punktschweiss-          vorriehtungen        üblich    sind,     vermeiden.    kann      und dass auf diese Weise     auch        Anschlüsse    mit  Punkten möglich sind,

   die     sonst    örtlich       schwer    zu erreichen sind.  



  Das Verfahren kann vorteilhaft in de  Weise durchgeführt werden, dass nur die  Endfläche des Zuführungsleiters mit der  Fläche des elektrischen Gerätes in Kontakt  gebracht wird, zum     Beispiel    mit der Trag  platte eines     Sperrschichtgleiehrichters,    mit  welcher die Zuleitung verbunden      -erden    soll.  



  Die bei einem     Sperrschichtgleichrichter     angewendete Erfindung wird an Hand der       beiliegenden    Zeichnung     näher        erläutert-,    in  der     Fig.    1     skizzenmässig    das Verfahren     finit     der Schaltung illustriert und     Fig.    ? eine Va  riante der in der     Fig.    1 gezeigten Verbindung  darstellt.  



       Fig.    1     zeigt    skizzenmässig einen Sperr  schichtgleichrichter. dessen Trägerplatte aus       Eisen    mit 1 bezeichnet ist. während ? eine       Selenelektrode    und 3 die Gegenelektrode aus  einer Legierung von Zinn, Wismut und Cad  mium bezeichnen. Zwischen den Elektroden  2 und 3 befindet sich die nicht. in der Zeich  nung dargestellte Sperrschicht. Der Gleich  richter wird von dem Maul 4 einer Zange 5  festgehalten, welche für grössere Apparate  nicht erforderlich ist.  



  Der     Zuführungsleiter        besteht    nun aus  einem Draht 6, der das Ende des auf einer  Rolle 7 aufgewickelten     Drahtvorrates    dar  stellt. Dieser     Dra.litvorrat    steht in Verbin  dung mit einer     Kondensatorbatterie    8,     welche     mit einer     Aufladevorrichtunb    9 für diese  Batterie verbunden ist, deren     anderes    Ende  mit der Zange 5 verbunden ist.  



  Wird das Drahtende 6 auf die     Träl;er-          platte    1 gebracht, so entlädt sich die     Konden-          satorbatterie    8 und an der     Konlaktstelle   <B>10</B>  entsteht infolge des     LTberga.ngs         iderstandes     in diesem Punkt eine so grosse:     \Värme-          ent,.vieklung,    dass eine     Schweissverbindung;     entsteht.

   Im     Grundsatz    ist hier also das Ver  fahren der     Widerstandsschweissung    ange  wendet, wobei     aber    die Elektrode 6 selbst. an  das     Arbeitsstück.        festgeschweisst        wird.    Der  Draht 6 wird dann auf die erforderliche  Länge abgeschnitten     und    bildet den Zufüh-         rungsleiter    für das     Sperrschichtgleichrichter-          system.    Ein folgendes von der Rolle 7 abge  wickeltes Drahtende kann auf gleiche Weise  an einen folgenden     Sperrschichtgleichrichter          angeschweisst    werden und so 

  können auf ein  fache und billige     ZVeise    in der Massen  herstellung die     Zuführungsleiter    angebracht       ,verden.     



  Da man mit dein Draht 6 die zu ver  bindende Elektrode des     Sperrschiehtsystems     einfach nur zu     berühren    braucht, ist diese       Veirbindungsweise    auch     ;geeignet    für Kon  taktbildung mit äusserst kleinen Elektroden  systemen von zum     Beispiel    nur einigen     Milli-          meter    Durchschnitt.     Weiter    kann der Kon  takt auch an schwer zu erreichenden Stellen  angeschlossen werden.  



  Bei der     Wahl    des     Materials    des     Zufüh-          rungsleiter7    ist zu berücksichtigen. dass es  leicht eine     Schweissverbindung    mit dem be  treffenden Teil eingeht. Wenn die     Träger-          platte    zum     Beispiel    aus Aluminium     besteht.     wird ein Zuführungsleiter aus Kupfer ver  wendet.     Zwecks    Erzielung einer guten       Schweissverbindung    wird der Draht möglichst  glatt     abgeschnitten.     



  Man kann auch noch auf etwas andere  Weise verfahren. wenn zum Beispiel, wie in       Fig.        \?    dargestellt, ein     Litzendraht    11 ange  bracht      -erden    soll. Es wird dann     zunächst    am  Ende dieses     Drahtes    dadurch eine Schmelz  kugel 12 gebildet. dass man zwei Drahtenden  gegeneinander bringt und eine Kondensator  entladung übergehen lässt. Darauf bringt man  diese     Schmeizk gel    1? auf die Platte I und  lässt wieder die Entladung übergehen. wobei  die Schweissverbindung     entsteht.     



  Es kann als Stromquelle ein auf 400 Volt       aufgeladener    Kondensator von 100     Mikro-          farad    verwendet  -erden.



  Method for connecting an electrical supply conductor to part of an electrical device, in particular a barrier rectifier. The present invention relates to a method for connecting an electrical supply conductor to a part of an electrical device, in particular a barrier rectifier.



  In electrical devices, for example junction rectifiers, the parts of which, for example electrodes, often have small dimensions, the difficulty arises in mass production of connecting a supply conductor quickly and safely with an electrode of the system.

   Soldering is cumbersome and there is a risk of damage to the electrode system. The latter disadvantage can also occur with the application of the known spot welding process, in which the two parts to be connected are brought between the electrodes of a welding apparatus.



  These disadvantages can be avoided with the method according to the invention. The method consists in that the supply conductor is connected to the connection surface of the device part by means of a spot weld, the supply conductor itself serving as a welding electrode and connected to the contact point after subsequent welding. remains.



  Use is therefore made of the fact that the electrode itself is welded to the workpiece if a current surge is allowed to pass through, which is sufficient to allow the tip of the electrode and the surface of the workpiece underneath to flow in places (due to the contact resistance) and if the electrode is allowed to cool in this state.

   The feed wire can be cut to the required length after welding.



  It turned out that the. According to the invention, more or less complicated devices for holding the workpiece and for pressing the electrodes, which devices are common in spot welding devices, should be avoided. and that connections with points are also possible in this way,

   which are otherwise difficult to reach locally.



  The method can advantageously be carried out in such a way that only the end face of the supply conductor is brought into contact with the surface of the electrical device, for example with the support plate of a barrier layer leveler to which the supply line is to be connected.



  The invention applied to a junction rectifier is explained in more detail with reference to the accompanying drawing, in which FIG. 1 schematically illustrates the method finite circuit and FIG. represents a variant of the connection shown in FIG.



       Fig. 1 shows a sketch of a barrier rectifier. whose support plate made of iron is denoted by 1. while ? a selenium electrode and 3 denote the counter electrode made of an alloy of tin, bismuth and cadmium. There is no between electrodes 2 and 3. barrier layer shown in the drawing. The rectifier is held in place by the mouth 4 of a pair of pliers 5, which is not required for larger apparatus.



  The supply conductor now consists of a wire 6, which is the end of the wire supply wound on a roll 7 is. This Dra.litvorrat is in connection with a capacitor battery 8, which is connected to a charging device 9 for this battery, the other end of which is connected to the pliers 5.



  If the wire end 6 is brought onto the support plate 1, the capacitor battery 8 is discharged and at the contact point <B> 10 </B> there is such a large amount of heat as a result of the LTberga.ng resistance at this point - ent, .vieklung that a welded joint; arises.

   In principle, the process of resistance welding is used here, but the electrode 6 itself. To the workpiece. is welded. The wire 6 is then cut to the required length and forms the lead for the barrier rectifier system. A subsequent wire end unwound from the reel 7 can be welded in the same way to a subsequent barrier rectifier and so on

  the supply ladder can be attached in a simple and inexpensive way in mass production.



  Since you only need to touch the electrode of the barrier system to be connected with your wire 6, this connection method is also suitable for making contact with extremely small electrode systems, for example only a few millimeters in diameter. The contact can also be connected to places that are difficult to reach.



  When choosing the material for the supply ladder7, this must be taken into account. that it easily enters into a welded connection with the part in question. If the carrier plate is made of aluminum, for example. a copper lead wire is used. In order to achieve a good welded connection, the wire is cut as smoothly as possible.



  One can also proceed in a slightly different way. if for example, as in Fig. \? shown, a stranded wire 11 is to be brought -erden. A melting ball 12 is then initially formed at the end of this wire. that you bring two wire ends against each other and let a capacitor discharge pass. Do you bring this charm 1? onto plate I and let the discharge pass again. whereby the welded joint is created.



  A capacitor of 100 microfarads charged to 400 volts can be used as the power source.

Claims (1)

PATENTANSPRUCH: Verfahren zum Anschluss eines elektri schen 7.ufiihrltngsleiters an einen Teil eines elektrischen Gerätes, iiislx13on.dere eine Sperrschichtgleichrichters, dadurch gekenn zeichnet, dass der Zuführungsleiter mittels einer Punktscliweissung mit .der Anschluss- fläclie des Geräteteils verbunden wird, PATENT CLAIM: A method for connecting an electrical conductor to a part of an electrical device, including a barrier rectifier, characterized in that the feed conductor is connected to the connection surface of the device part by means of a point clip, wobei der Zuführungsleiter selbst als Schweiss elektrode dient und nach erfolgter Sehwei- ssung mit der Kontaktstelle verbunden bleibt. <B>UNTERANSPRÜCHE:</B> 1. Verfahren nach Patentanspruch, da durch gekennzeichnet, dass nur die Endfläche der Zuleitung mit der An.schlussfläche des Geräteteils in Kontakt gebracht wird, mit welchem .die Zuleitung verbunden werden soll. 2. whereby the supply conductor itself serves as a welding electrode and remains connected to the contact point after viewing. <B> SUBClaims: </B> 1. Method according to patent claim, characterized in that only the end face of the supply line is brought into contact with the connection surface of the device part to which the supply line is to be connected. 2. Verfahren nach Patentanspruch, da durch gekennzeichnet, dass, der Zuführung,9- leiter mit einer Kondensatarbatterie verbun den wird, welche zur Lieferung des Schweiss stromstosses vorgesehen ist, worauf der Leiter an der Verbindungsstelle mit dem zu verbin denden Geräteteil in Kontakt.gebracht wird. Method according to patent claim, characterized in that the feed line is connected to a capacitor battery which is provided for supplying the welding current surge, whereupon the line is brought into contact at the connection point with the device part to be connected.
CH229963D 1942-03-27 1942-03-27 Method for connecting an electrical supply conductor to part of an electrical device, in particular a barrier rectifier. CH229963A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH229963T 1942-03-27

Publications (1)

Publication Number Publication Date
CH229963A true CH229963A (en) 1943-11-30

Family

ID=4456370

Family Applications (1)

Application Number Title Priority Date Filing Date
CH229963D CH229963A (en) 1942-03-27 1942-03-27 Method for connecting an electrical supply conductor to part of an electrical device, in particular a barrier rectifier.

Country Status (2)

Country Link
CH (1) CH229963A (en)
NL (1) NL55489C (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1060055B (en) * 1957-11-15 1959-06-25 Siemens Ag Process for the production of the electrical connections of semiconductor arrangements

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1060055B (en) * 1957-11-15 1959-06-25 Siemens Ag Process for the production of the electrical connections of semiconductor arrangements

Also Published As

Publication number Publication date
NL55489C (en) 1900-01-01

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