CA998777A - Thyristor highly proof against time rate of change of voltage - Google Patents

Thyristor highly proof against time rate of change of voltage

Info

Publication number
CA998777A
CA998777A CA199,009A CA199009A CA998777A CA 998777 A CA998777 A CA 998777A CA 199009 A CA199009 A CA 199009A CA 998777 A CA998777 A CA 998777A
Authority
CA
Canada
Prior art keywords
thyristor
voltage
change
against time
time rate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA199,009A
Other languages
English (en)
Other versions
CA199009S (en
Inventor
Tatsuya Kamei
Yoshikazu Hosokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of CA998777A publication Critical patent/CA998777A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7436—Lateral thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
CA199,009A 1973-05-08 1974-05-06 Thyristor highly proof against time rate of change of voltage Expired CA998777A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48050973A JPS502482A (fr) 1973-05-08 1973-05-08

Publications (1)

Publication Number Publication Date
CA998777A true CA998777A (en) 1976-10-19

Family

ID=12873742

Family Applications (1)

Application Number Title Priority Date Filing Date
CA199,009A Expired CA998777A (en) 1973-05-08 1974-05-06 Thyristor highly proof against time rate of change of voltage

Country Status (3)

Country Link
US (1) US3958268A (fr)
JP (1) JPS502482A (fr)
CA (1) CA998777A (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5936832B2 (ja) * 1978-03-14 1984-09-06 株式会社日立製作所 半導体スイッチング素子
JPS54152477A (en) * 1978-04-24 1979-11-30 Gen Electric Thyristor and method of forming same
US4261000A (en) * 1980-05-23 1981-04-07 General Electric Company High voltage semiconductor device having an improved dv/dt capability
IT1212767B (it) * 1983-07-29 1989-11-30 Ates Componenti Elettron Soppressore di sovratensioni a semiconduttore con tensione d'innesco predeterminabile con precisione.
IT1212799B (it) * 1983-12-15 1989-11-30 Ates Componenti Elettron Dispositivo elettronico ad interruttore comandato per la soppressione di transitori.
FR2960342B1 (fr) * 2010-05-18 2012-06-08 St Microelectronics Tours Sas Commutateur bidirectionnel a commande hf

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1095576A (fr) * 1964-08-12 1900-01-01
US3524114A (en) * 1968-02-29 1970-08-11 Jearld L Hutson Thyristor having sensitive gate turn-on characteristics
CH485329A (de) * 1968-07-22 1970-01-31 Bbc Brown Boveri & Cie Stossspannungsfeste Halbleiterdiode
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon

Also Published As

Publication number Publication date
JPS502482A (fr) 1975-01-11
US3958268A (en) 1976-05-18

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