CA996262A - Nonvolatile memory cell - Google Patents

Nonvolatile memory cell

Info

Publication number
CA996262A
CA996262A CA172,235A CA172235A CA996262A CA 996262 A CA996262 A CA 996262A CA 172235 A CA172235 A CA 172235A CA 996262 A CA996262 A CA 996262A
Authority
CA
Canada
Prior art keywords
memory cell
nonvolatile memory
nonvolatile
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA172,235A
Other languages
English (en)
Other versions
CA172235S (en
Inventor
Nicholas E. Aneshansley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Application granted granted Critical
Publication of CA996262A publication Critical patent/CA996262A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Liquid Crystal (AREA)
CA172,235A 1972-06-28 1973-05-25 Nonvolatile memory cell Expired CA996262A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US26699972A 1972-06-28 1972-06-28

Publications (1)

Publication Number Publication Date
CA996262A true CA996262A (en) 1976-08-31

Family

ID=23016890

Family Applications (1)

Application Number Title Priority Date Filing Date
CA172,235A Expired CA996262A (en) 1972-06-28 1973-05-25 Nonvolatile memory cell

Country Status (6)

Country Link
US (1) US3761901A (ja)
JP (1) JPS4945648A (ja)
CA (1) CA996262A (ja)
DE (1) DE2332643C2 (ja)
FR (1) FR2191204B1 (ja)
GB (1) GB1370870A (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE31875E (en) * 1971-11-04 1985-04-30 Pitney Bowes Inc. Computer responsive postage meter
US3846768A (en) * 1972-12-29 1974-11-05 Ibm Fixed threshold variable threshold storage device for use in a semiconductor storage array
US3845471A (en) * 1973-05-14 1974-10-29 Westinghouse Electric Corp Classification of a subject
ZA743969B (en) * 1973-10-16 1975-06-25 Pitney Bowes Inc Computer responsive postage meter
US4675841A (en) * 1974-12-23 1987-06-23 Pitney Bowes Inc. Micro computerized electronic postage meter system
US3916390A (en) * 1974-12-31 1975-10-28 Ibm Dynamic memory with non-volatile back-up mode
JPS51130132A (en) * 1975-05-07 1976-11-12 Nec Corp Semi-conductor memory
GB1571085A (en) * 1975-12-15 1980-07-30 Heritier F Taximeters
US4175291A (en) * 1976-08-16 1979-11-20 Ncr Corporation Non-volatile random access memory cell
DE2736715C2 (de) * 1976-08-16 1985-03-14 Ncr Corp., Dayton, Ohio Speichervorrichtung mit wahlfreiem Zugriff
US4218764A (en) * 1978-10-03 1980-08-19 Matsushita Electric Industrial Co., Ltd. Non-volatile memory refresh control circuit
US4271487A (en) * 1979-11-13 1981-06-02 Ncr Corporation Static volatile/non-volatile ram cell
US4375086A (en) * 1980-05-15 1983-02-22 Ncr Corporation Volatile/non-volatile dynamic RAM system
JPS58138234A (ja) * 1982-02-10 1983-08-17 Nissan Motor Co Ltd 車両用多気筒内燃機関の燃料供給制御装置
JPS58193027A (ja) * 1982-05-04 1983-11-10 Matsushita Electric Ind Co Ltd 加熱装置
US6107865A (en) * 1997-10-31 2000-08-22 Stmicroelectronics, Inc. VSS switching scheme for battery backed-up semiconductor devices
TWI349855B (en) * 2007-11-30 2011-10-01 Sunplus Technology Co Ltd Method for recording data using non-volatile memory and electronic apparatus thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3274444A (en) * 1963-04-17 1966-09-20 Sperry Rand Corp Signal responsive apparatus
US3428875A (en) * 1966-10-03 1969-02-18 Fairchild Camera Instr Co Variable threshold insulated gate field effect device
US3508211A (en) * 1967-06-23 1970-04-21 Sperry Rand Corp Electrically alterable non-destructive readout field effect transistor memory
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3660827A (en) * 1969-09-10 1972-05-02 Litton Systems Inc Bistable electrical circuit with non-volatile storage capability
US3676717A (en) * 1970-11-02 1972-07-11 Ncr Co Nonvolatile flip-flop memory cell
US3718915A (en) * 1971-06-07 1973-02-27 Motorola Inc Opposite conductivity gating circuit for refreshing information in semiconductor memory cells

Also Published As

Publication number Publication date
FR2191204B1 (ja) 1979-08-03
US3761901A (en) 1973-09-25
DE2332643C2 (de) 1982-05-06
FR2191204A1 (ja) 1974-02-01
DE2332643A1 (de) 1974-01-17
JPS4945648A (ja) 1974-05-01
GB1370870A (en) 1974-10-16

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