CA994925A - Self-aligned implanted barrier for two-phase charge coupled devices - Google Patents

Self-aligned implanted barrier for two-phase charge coupled devices

Info

Publication number
CA994925A
CA994925A CA192,008A CA192008A CA994925A CA 994925 A CA994925 A CA 994925A CA 192008 A CA192008 A CA 192008A CA 994925 A CA994925 A CA 994925A
Authority
CA
Canada
Prior art keywords
self
charge coupled
coupled devices
phase charge
implanted barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA192,008A
Other languages
English (en)
Inventor
Phillip J. Salsbury
Choong-Ki Kim
Gilbert F. Amelio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Application granted granted Critical
Publication of CA994925A publication Critical patent/CA994925A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/03—Diffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CA192,008A 1973-05-21 1974-02-07 Self-aligned implanted barrier for two-phase charge coupled devices Expired CA994925A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00362132A US3853634A (en) 1973-05-21 1973-05-21 Self-aligned implanted barrier two-phase charge coupled devices

Publications (1)

Publication Number Publication Date
CA994925A true CA994925A (en) 1976-08-10

Family

ID=23424806

Family Applications (1)

Application Number Title Priority Date Filing Date
CA192,008A Expired CA994925A (en) 1973-05-21 1974-02-07 Self-aligned implanted barrier for two-phase charge coupled devices

Country Status (8)

Country Link
US (1) US3853634A (it)
JP (1) JPS5713142B2 (it)
CA (1) CA994925A (it)
DE (1) DE2410628A1 (it)
FR (1) FR2231113B1 (it)
GB (1) GB1463121A (it)
IT (1) IT1011658B (it)
NL (1) NL7401971A (it)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3925105A (en) * 1974-07-02 1975-12-09 Texas Instruments Inc Process for fabricating integrated circuits utilizing ion implantation
US3930893A (en) * 1975-03-03 1976-01-06 Honeywell Information Systems, Inc. Conductivity connected charge-coupled device fabrication process
US4167017A (en) * 1976-06-01 1979-09-04 Texas Instruments Incorporated CCD structures with surface potential asymmetry beneath the phase electrodes
US4076557A (en) * 1976-08-19 1978-02-28 Honeywell Inc. Method for providing semiconductor devices
JPS5325373A (en) * 1976-08-20 1978-03-09 Sony Corp Production of charge transfer device
US4156247A (en) * 1976-12-15 1979-05-22 Electron Memories & Magnetic Corporation Two-phase continuous poly silicon gate CCD
JPS53110385A (en) * 1977-03-08 1978-09-27 Matsushita Electric Ind Co Ltd Manufacture of ccd
US4360963A (en) * 1981-07-31 1982-11-30 Rca Corporation Method of making CCD imagers with reduced defects
GB2137806B (en) * 1983-04-05 1986-10-08 Standard Telephones Cables Ltd Ion implantation in semiconductor bodies
FR2578683B1 (fr) * 1985-03-08 1987-08-28 Thomson Csf Procede de fabrication d'une diode anti-eblouissement associee a un canal en surface, et systeme anti-eblouissement obtenu par ce procede
US4992392A (en) * 1989-12-28 1991-02-12 Eastman Kodak Company Method of making a virtual phase CCD
JPH06140442A (ja) * 1992-10-29 1994-05-20 Matsushita Electric Ind Co Ltd 電荷転送装置
US5302544A (en) * 1992-12-17 1994-04-12 Eastman Kodak Company Method of making CCD having a single level electrode of single crystalline silicon
US5298448A (en) * 1992-12-18 1994-03-29 Eastman Kodak Company Method of making two-phase buried channel planar gate CCD
US5292682A (en) * 1993-07-06 1994-03-08 Eastman Kodak Company Method of making two-phase charge coupled device
US7217601B1 (en) 2002-10-23 2007-05-15 Massachusetts Institute Of Technology High-yield single-level gate charge-coupled device design and fabrication
US9848142B2 (en) 2015-07-10 2017-12-19 Semiconductor Components Industries, Llc Methods for clocking an image sensor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures
US3699646A (en) * 1970-12-28 1972-10-24 Intel Corp Integrated circuit structure and method for making integrated circuit structure
US3717790A (en) * 1971-06-24 1973-02-20 Bell Telephone Labor Inc Ion implanted silicon diode array targets for electron beam camera tubes

Also Published As

Publication number Publication date
AU6673674A (en) 1975-09-18
FR2231113B1 (it) 1978-03-31
GB1463121A (en) 1977-02-02
JPS5713142B2 (it) 1982-03-15
DE2410628A1 (de) 1974-12-12
JPS5020678A (it) 1975-03-05
US3853634A (en) 1974-12-10
FR2231113A1 (it) 1974-12-20
IT1011658B (it) 1977-02-10
NL7401971A (it) 1974-11-25

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