CA993100A - Charge transfer imaging devices - Google Patents
Charge transfer imaging devicesInfo
- Publication number
- CA993100A CA993100A CA164,105A CA164105A CA993100A CA 993100 A CA993100 A CA 993100A CA 164105 A CA164105 A CA 164105A CA 993100 A CA993100 A CA 993100A
- Authority
- CA
- Canada
- Prior art keywords
- charge transfer
- imaging devices
- transfer imaging
- devices
- charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003384 imaging method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/625—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/745—Circuitry for generating timing or clock signals
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Color Television Image Signal Generators (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23574172A | 1972-03-17 | 1972-03-17 | |
US31610572A | 1972-12-18 | 1972-12-18 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA993100A true CA993100A (en) | 1976-07-13 |
Family
ID=26929181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA164,105A Expired CA993100A (en) | 1972-03-17 | 1973-02-20 | Charge transfer imaging devices |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5218083B2 (it) |
CA (1) | CA993100A (it) |
DE (1) | DE2312952C3 (it) |
FR (1) | FR2176831B1 (it) |
GB (1) | GB1411512A (it) |
IT (1) | IT979787B (it) |
NL (1) | NL164705C (it) |
SE (1) | SE379453B (it) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3932775A (en) * | 1974-07-25 | 1976-01-13 | Rca Corporation | Interlaced readout of charge stored in a charge coupled image sensing array |
JPS5828945B2 (ja) * | 1976-07-30 | 1983-06-18 | 沖電気工業株式会社 | 図形入力装置 |
JPS5425114A (en) * | 1977-07-27 | 1979-02-24 | Matsushita Electronics Corp | Solid pickup unit |
JPS55151959A (en) * | 1980-04-04 | 1980-11-26 | Teresensarii Systems Inc | Photoelectric converter |
JPS62200008U (it) * | 1986-06-11 | 1987-12-19 |
-
1973
- 1973-02-20 CA CA164,105A patent/CA993100A/en not_active Expired
- 1973-03-09 SE SE7303344A patent/SE379453B/xx unknown
- 1973-03-09 IT IT48705/73A patent/IT979787B/it active
- 1973-03-12 NL NL7303443.A patent/NL164705C/xx not_active IP Right Cessation
- 1973-03-12 GB GB1170473A patent/GB1411512A/en not_active Expired
- 1973-03-15 DE DE2312952A patent/DE2312952C3/de not_active Expired
- 1973-03-16 FR FR7309604A patent/FR2176831B1/fr not_active Expired
- 1973-03-16 JP JP48030157A patent/JPS5218083B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
SE379453B (it) | 1975-10-06 |
FR2176831A1 (it) | 1973-11-02 |
JPS5218083B2 (it) | 1977-05-19 |
IT979787B (it) | 1974-09-30 |
DE2312952B2 (de) | 1974-04-25 |
DE2312952A1 (de) | 1973-09-20 |
JPS4914025A (it) | 1974-02-07 |
DE2312952C3 (de) | 1974-11-21 |
GB1411512A (en) | 1975-10-29 |
NL7303443A (it) | 1973-09-19 |
FR2176831B1 (it) | 1976-12-03 |
NL164705B (nl) | 1980-08-15 |
NL164705C (nl) | 1981-01-15 |
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