CA993100A - Charge transfer imaging devices - Google Patents

Charge transfer imaging devices

Info

Publication number
CA993100A
CA993100A CA164,105A CA164105A CA993100A CA 993100 A CA993100 A CA 993100A CA 164105 A CA164105 A CA 164105A CA 993100 A CA993100 A CA 993100A
Authority
CA
Canada
Prior art keywords
charge transfer
imaging devices
transfer imaging
devices
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA164,105A
Other languages
English (en)
Other versions
CA164105S (fr
Inventor
Carlo H. Sequin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA993100A publication Critical patent/CA993100A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14831Area CCD imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42396Gate electrodes for field effect devices for charge coupled devices
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/625Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/72Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/71Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/745Circuitry for generating timing or clock signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CA164,105A 1972-03-17 1973-02-20 Charge transfer imaging devices Expired CA993100A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US23574172A 1972-03-17 1972-03-17
US31610572A 1972-12-18 1972-12-18

Publications (1)

Publication Number Publication Date
CA993100A true CA993100A (en) 1976-07-13

Family

ID=26929181

Family Applications (1)

Application Number Title Priority Date Filing Date
CA164,105A Expired CA993100A (en) 1972-03-17 1973-02-20 Charge transfer imaging devices

Country Status (8)

Country Link
JP (1) JPS5218083B2 (it)
CA (1) CA993100A (it)
DE (1) DE2312952C3 (it)
FR (1) FR2176831B1 (it)
GB (1) GB1411512A (it)
IT (1) IT979787B (it)
NL (1) NL164705C (it)
SE (1) SE379453B (it)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3932775A (en) * 1974-07-25 1976-01-13 Rca Corporation Interlaced readout of charge stored in a charge coupled image sensing array
JPS5828945B2 (ja) * 1976-07-30 1983-06-18 沖電気工業株式会社 図形入力装置
JPS5425114A (en) * 1977-07-27 1979-02-24 Matsushita Electronics Corp Solid pickup unit
JPS55151959A (en) * 1980-04-04 1980-11-26 Teresensarii Systems Inc Photoelectric converter
JPS62200008U (it) * 1986-06-11 1987-12-19

Also Published As

Publication number Publication date
SE379453B (it) 1975-10-06
FR2176831A1 (it) 1973-11-02
JPS5218083B2 (it) 1977-05-19
IT979787B (it) 1974-09-30
DE2312952B2 (de) 1974-04-25
DE2312952A1 (de) 1973-09-20
JPS4914025A (it) 1974-02-07
DE2312952C3 (de) 1974-11-21
GB1411512A (en) 1975-10-29
NL7303443A (it) 1973-09-19
FR2176831B1 (it) 1976-12-03
NL164705B (nl) 1980-08-15
NL164705C (nl) 1981-01-15

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