NL164705B - Beeldopneeminrichting omvattende een lichaam van een materiaal met een verboden energieband tussen de valentieband en de geleidingsband, een op een hoofdvlak van het lichaam aangebrachte isolerende laag en een op de isolerende laag aangebracht stelsel van elektroden. - Google Patents
Beeldopneeminrichting omvattende een lichaam van een materiaal met een verboden energieband tussen de valentieband en de geleidingsband, een op een hoofdvlak van het lichaam aangebrachte isolerende laag en een op de isolerende laag aangebracht stelsel van elektroden.Info
- Publication number
- NL164705B NL164705B NL7303443.A NL7303443A NL164705B NL 164705 B NL164705 B NL 164705B NL 7303443 A NL7303443 A NL 7303443A NL 164705 B NL164705 B NL 164705B
- Authority
- NL
- Netherlands
- Prior art keywords
- band
- insulating layer
- valentine
- main surface
- recording device
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
- H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
- H04N25/625—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of smear
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/72—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame transfer [FT]
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/745—Circuitry for generating timing or clock signals
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23574172A | 1972-03-17 | 1972-03-17 | |
US31610572A | 1972-12-18 | 1972-12-18 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL7303443A NL7303443A (nl) | 1973-09-19 |
NL164705B true NL164705B (nl) | 1980-08-15 |
NL164705C NL164705C (nl) | 1981-01-15 |
Family
ID=26929181
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7303443.A NL164705C (nl) | 1972-03-17 | 1973-03-12 | Beeldopneeminrichting omvattende een lichaam van een materiaal met een verboden energieband tussen de valentieband en de geleidingsband, een op een hoofdvlak van het lichaam aangebrachte isolerende laag en een op de isolerende laag aangebracht stelsel van elektroden. |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS5218083B2 (nl) |
CA (1) | CA993100A (nl) |
DE (1) | DE2312952C3 (nl) |
FR (1) | FR2176831B1 (nl) |
GB (1) | GB1411512A (nl) |
IT (1) | IT979787B (nl) |
NL (1) | NL164705C (nl) |
SE (1) | SE379453B (nl) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3932775A (en) * | 1974-07-25 | 1976-01-13 | Rca Corporation | Interlaced readout of charge stored in a charge coupled image sensing array |
JPS5828945B2 (ja) * | 1976-07-30 | 1983-06-18 | 沖電気工業株式会社 | 図形入力装置 |
JPS5425114A (en) * | 1977-07-27 | 1979-02-24 | Matsushita Electronics Corp | Solid pickup unit |
JPS55151959A (en) * | 1980-04-04 | 1980-11-26 | Teresensarii Systems Inc | Photoelectric converter |
JPS62200008U (nl) * | 1986-06-11 | 1987-12-19 |
-
1973
- 1973-02-20 CA CA164,105A patent/CA993100A/en not_active Expired
- 1973-03-09 SE SE7303344A patent/SE379453B/xx unknown
- 1973-03-09 IT IT48705/73A patent/IT979787B/it active
- 1973-03-12 NL NL7303443.A patent/NL164705C/nl not_active IP Right Cessation
- 1973-03-12 GB GB1170473A patent/GB1411512A/en not_active Expired
- 1973-03-15 DE DE2312952A patent/DE2312952C3/de not_active Expired
- 1973-03-16 FR FR7309604A patent/FR2176831B1/fr not_active Expired
- 1973-03-16 JP JP48030157A patent/JPS5218083B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
SE379453B (nl) | 1975-10-06 |
FR2176831A1 (nl) | 1973-11-02 |
JPS5218083B2 (nl) | 1977-05-19 |
CA993100A (en) | 1976-07-13 |
IT979787B (it) | 1974-09-30 |
DE2312952B2 (de) | 1974-04-25 |
DE2312952A1 (de) | 1973-09-20 |
JPS4914025A (nl) | 1974-02-07 |
DE2312952C3 (de) | 1974-11-21 |
GB1411512A (en) | 1975-10-29 |
NL7303443A (nl) | 1973-09-19 |
FR2176831B1 (nl) | 1976-12-03 |
NL164705C (nl) | 1981-01-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
V1 | Lapsed because of non-payment of the annual fee |