CA984976A - Method of carrying out diffusions with two sources - Google Patents

Method of carrying out diffusions with two sources

Info

Publication number
CA984976A
CA984976A CA167,715A CA167715A CA984976A CA 984976 A CA984976 A CA 984976A CA 167715 A CA167715 A CA 167715A CA 984976 A CA984976 A CA 984976A
Authority
CA
Canada
Prior art keywords
sources
carrying
diffusions
out diffusions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA167,715A
Other languages
English (en)
Other versions
CA167715S (en
Inventor
Daniel Diguet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA984976A publication Critical patent/CA984976A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
    • C30B31/165—Diffusion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA167,715A 1972-04-05 1973-04-02 Method of carrying out diffusions with two sources Expired CA984976A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7211912A FR2178751B1 (ja) 1972-04-05 1972-04-05

Publications (1)

Publication Number Publication Date
CA984976A true CA984976A (en) 1976-03-02

Family

ID=9096355

Family Applications (1)

Application Number Title Priority Date Filing Date
CA167,715A Expired CA984976A (en) 1972-04-05 1973-04-02 Method of carrying out diffusions with two sources

Country Status (7)

Country Link
US (1) US3852129A (ja)
JP (1) JPS525226B2 (ja)
CA (1) CA984976A (ja)
DE (1) DE2315894C3 (ja)
FR (1) FR2178751B1 (ja)
GB (1) GB1372162A (ja)
IT (1) IT980738B (ja)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2284982A1 (fr) * 1974-09-16 1976-04-09 Radiotechnique Compelec Procede de diffusion d'impuretes dans des corps semiconducteurs
JPS5464978U (ja) * 1977-10-17 1979-05-08
FR2409791A1 (fr) * 1977-11-25 1979-06-22 Silicium Semiconducteur Ssc Appareils de dopage par diffusion de tranches semi-conductrices
JPS584811B2 (ja) * 1978-10-31 1983-01-27 富士通株式会社 半導体装置の製造方法
US4348580A (en) * 1980-05-07 1982-09-07 Tylan Corporation Energy efficient furnace with movable end wall
US4415385A (en) * 1980-08-15 1983-11-15 Hitachi, Ltd. Diffusion of impurities into semiconductor using semi-closed inner diffusion vessel
US4742022A (en) * 1986-06-26 1988-05-03 Gte Laboratories Incorporated Method of diffusing zinc into III-V compound semiconductor material

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL125226C (ja) * 1960-05-02
US3305412A (en) * 1964-02-20 1967-02-21 Hughes Aircraft Co Method for preparing a gallium arsenide diode
DE1283204B (de) * 1964-06-20 1968-11-21 Siemens Ag Verfahren zum Eindiffundieren von zwei Fremdstoffen in einen einkristallinen Halbleiterkoerper
GB1054360A (ja) * 1964-12-05
GB1086660A (en) * 1964-12-22 1967-10-11 Siemens Ag A process for doping semiconductor bodies
US3279964A (en) * 1965-06-03 1966-10-18 Btu Eng Corp Method for continuous gas diffusion
US3617820A (en) * 1966-11-18 1971-11-02 Monsanto Co Injection-luminescent diodes
US3540952A (en) * 1968-01-02 1970-11-17 Gen Electric Process for fabricating semiconductor laser diodes
JPS4915903B1 (ja) * 1969-08-18 1974-04-18

Also Published As

Publication number Publication date
IT980738B (it) 1974-10-10
DE2315894C3 (de) 1980-10-02
FR2178751A1 (ja) 1973-11-16
DE2315894A1 (de) 1973-10-18
DE2315894B2 (ja) 1980-02-07
JPS4917675A (ja) 1974-02-16
JPS525226B2 (ja) 1977-02-10
GB1372162A (en) 1974-10-30
US3852129A (en) 1974-12-03
FR2178751B1 (ja) 1974-10-18

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