CA979526A - Capacitive matrix store - Google Patents

Capacitive matrix store

Info

Publication number
CA979526A
CA979526A CA128,328A CA128328A CA979526A CA 979526 A CA979526 A CA 979526A CA 128328 A CA128328 A CA 128328A CA 979526 A CA979526 A CA 979526A
Authority
CA
Canada
Prior art keywords
matrix store
capacitive matrix
capacitive
store
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA128,328A
Other languages
English (en)
Other versions
CA128328S (en
Inventor
Wolfdietrich G. Kasperkovitz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of CA979526A publication Critical patent/CA979526A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/10—DRAM devices comprising bipolar components

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Electronic Switches (AREA)
  • Bipolar Integrated Circuits (AREA)
CA128,328A 1970-11-27 1971-11-23 Capacitive matrix store Expired CA979526A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7017342.A NL165601C (nl) 1970-11-27 1970-11-27 Geintegreerd capacitief matrixgeheugen.

Publications (1)

Publication Number Publication Date
CA979526A true CA979526A (en) 1975-12-09

Family

ID=19811655

Family Applications (1)

Application Number Title Priority Date Filing Date
CA128,328A Expired CA979526A (en) 1970-11-27 1971-11-23 Capacitive matrix store

Country Status (8)

Country Link
US (1) US3761900A (enExample)
JP (1) JPS5244182B1 (enExample)
CA (1) CA979526A (enExample)
FR (1) FR2115442B1 (enExample)
GB (1) GB1375993A (enExample)
IT (1) IT941288B (enExample)
NL (1) NL165601C (enExample)
SE (1) SE382709B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5434227U (enExample) * 1977-08-10 1979-03-06
US4621205A (en) * 1984-01-16 1986-11-04 Hewlett-Packard Company Method and apparatus for reducing varactor noise

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI1A (fi) * 1842-06-29 Blåsmaskiner av järn
US3490007A (en) * 1965-12-24 1970-01-13 Nippon Electric Co Associative memory elements using field-effect transistors
US3448344A (en) * 1966-03-15 1969-06-03 Westinghouse Electric Corp Mosaic of semiconductor elements interconnected in an xy matrix
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3532945A (en) * 1967-08-30 1970-10-06 Fairchild Camera Instr Co Semiconductor devices having a low capacitance junction
JPS4844581B1 (enExample) * 1969-03-15 1973-12-25
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage

Also Published As

Publication number Publication date
GB1375993A (en) 1974-12-04
US3761900A (en) 1973-09-25
NL165601B (nl) 1980-11-17
NL165601C (nl) 1981-04-15
FR2115442B1 (enExample) 1976-12-03
FR2115442A1 (enExample) 1972-07-07
DE2155263A1 (de) 1972-06-08
NL7017342A (enExample) 1972-05-30
DE2155263B2 (de) 1977-03-03
SE382709B (sv) 1976-02-09
IT941288B (it) 1973-03-01
JPS5244182B1 (enExample) 1977-11-05

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