CA957599A - Process for preparing gaas1-xpx crystal - Google Patents

Process for preparing gaas1-xpx crystal

Info

Publication number
CA957599A
CA957599A CA141,323A CA141323A CA957599A CA 957599 A CA957599 A CA 957599A CA 141323 A CA141323 A CA 141323A CA 957599 A CA957599 A CA 957599A
Authority
CA
Canada
Prior art keywords
gaas1
xpx
preparing
crystal
xpx crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA141,323A
Other languages
English (en)
Other versions
CA141323S (en
Inventor
Ichiro Asao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of CA957599A publication Critical patent/CA957599A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145Arrangements of the electroluminescent material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/056Gallium arsenide
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/065Gp III-V generic compounds-processing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/072Heterojunctions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/936Graded energy gap
CA141,323A 1971-05-04 1972-05-04 Process for preparing gaas1-xpx crystal Expired CA957599A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46029695A JPS514918B1 (xx) 1971-05-04 1971-05-04

Publications (1)

Publication Number Publication Date
CA957599A true CA957599A (en) 1974-11-12

Family

ID=12283226

Family Applications (1)

Application Number Title Priority Date Filing Date
CA141,323A Expired CA957599A (en) 1971-05-04 1972-05-04 Process for preparing gaas1-xpx crystal

Country Status (7)

Country Link
US (1) US3806381A (xx)
JP (1) JPS514918B1 (xx)
CA (1) CA957599A (xx)
DE (1) DE2221864C3 (xx)
FR (1) FR2135211B1 (xx)
GB (1) GB1368660A (xx)
NL (1) NL153098B (xx)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4488914A (en) * 1982-10-29 1984-12-18 The United States Of America As Represented By The Secretary Of The Air Force Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch
US4504329A (en) * 1983-10-06 1985-03-12 The United States Of America As Represented By The Secretary Of The Air Force Process for the epitaxial deposition of III-V compounds utilizing a binary alloy as the metallic source

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1097551A (en) * 1964-04-17 1968-01-03 Texas Instruments Inc Method for making graded composition mixed compound semiconductor materials
CA934523A (en) * 1970-01-30 1973-10-02 Matsushita Electric Industrial Company Process for forming a ternary material on a substrate

Also Published As

Publication number Publication date
NL7205943A (xx) 1972-11-07
NL153098B (nl) 1977-05-16
GB1368660A (en) 1974-10-02
DE2221864B2 (de) 1975-04-17
DE2221864C3 (de) 1979-01-11
FR2135211A1 (xx) 1972-12-15
DE2221864A1 (de) 1972-11-16
JPS514918B1 (xx) 1976-02-16
FR2135211B1 (xx) 1974-10-18
US3806381A (en) 1974-04-23

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