CA954426A - Chemical growth of insulating layers on gallium arsenide - Google Patents

Chemical growth of insulating layers on gallium arsenide

Info

Publication number
CA954426A
CA954426A CA138,932A CA138932A CA954426A CA 954426 A CA954426 A CA 954426A CA 138932 A CA138932 A CA 138932A CA 954426 A CA954426 A CA 954426A
Authority
CA
Canada
Prior art keywords
insulating layers
gallium arsenide
chemical growth
growth
chemical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA138,932A
Other languages
English (en)
Other versions
CA138932S (en
Inventor
Robert E. Albano
John C. Dyment
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of CA954426A publication Critical patent/CA954426A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6312—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
CA138,932A 1971-06-25 1972-04-05 Chemical growth of insulating layers on gallium arsenide Expired CA954426A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15688671A 1971-06-25 1971-06-25
US21099271A 1971-12-22 1971-12-22

Publications (1)

Publication Number Publication Date
CA954426A true CA954426A (en) 1974-09-10

Family

ID=26853613

Family Applications (1)

Application Number Title Priority Date Filing Date
CA138,932A Expired CA954426A (en) 1971-06-25 1972-04-05 Chemical growth of insulating layers on gallium arsenide

Country Status (8)

Country Link
BE (1) BE785330A (https=)
CA (1) CA954426A (https=)
DE (1) DE2230150A1 (https=)
FR (1) FR2143453A1 (https=)
GB (1) GB1378200A (https=)
IT (1) IT966929B (https=)
NL (1) NL7208417A (https=)
SE (1) SE379063B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2413608C2 (de) * 1974-03-21 1982-09-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements
ATE130466T1 (de) * 1989-05-07 1995-12-15 Tadahiro Ohmi Verfahren zur herstellung eines siliziumoxydfilmes.

Also Published As

Publication number Publication date
SE379063B (https=) 1975-09-22
FR2143453A1 (https=) 1973-02-02
IT966929B (it) 1974-02-20
DE2230150A1 (de) 1973-01-11
GB1378200A (en) 1974-12-27
NL7208417A (https=) 1972-12-28
BE785330A (fr) 1972-10-16

Similar Documents

Publication Publication Date Title
CA968259A (en) Iii-v compound on insulating substrate
CA990186A (en) Method of depositing epitaxial semiconductor layers from the liquid phase
AU459386B2 (en) Semiconductor epitaxial growth from solution
CA976365A (en) Methods of producing superconductors
CA1002433A (en) Monocrystals of iii-v semiconductor compounds
CA921374A (en) Removal of projections on epitaxial layers
AU470879B2 (en) Stabilisation of peroxy-materials
CA954426A (en) Chemical growth of insulating layers on gallium arsenide
CA940805A (en) Fabrication of gallium arsenide devices
CA955542A (en) Locking devices
AU461502B2 (en) Controlled oxidation of ethylene
CA969374A (en) Separation of gallium
CA983684A (en) Superconductors
CA1014693A (en) Organic semiconductors
CA970304A (en) Preservation of beer
AU4778572A (en) Preservation of vegetables
CA888987A (en) Growth of insulating films
AU461399B2 (en) Method of obtaining gallium aluminium arsenide foran electroluminescent diode
CA1003850A (en) Dehydrogenation of organic compounds
CA878336A (en) Longitude keeper
CA863528A (en) Semiconductor networks
CA848403A (en) Epitaxially grown layers of binary semiconductor compounds
CA905266A (en) Manufacture of high-purity gallium arsenide
CA888446A (en) Manufacture of composite semiconductor devices
CA888442A (en) Methods of manufacturing semiconductor devices