CA954016A - Production of doped gallium arsenide - Google Patents

Production of doped gallium arsenide

Info

Publication number
CA954016A
CA954016A CA111,837A CA111837A CA954016A CA 954016 A CA954016 A CA 954016A CA 111837 A CA111837 A CA 111837A CA 954016 A CA954016 A CA 954016A
Authority
CA
Canada
Prior art keywords
production
gallium arsenide
doped gallium
doped
arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA111,837A
Other languages
English (en)
Other versions
CA111837S (en
Inventor
Wolfgang Touchy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA954016A publication Critical patent/CA954016A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CA111,837A 1970-04-30 1971-04-30 Production of doped gallium arsenide Expired CA954016A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702021345 DE2021345A1 (de) 1970-04-30 1970-04-30 Verfahren zum Herstellen von sauerstoffarmen Galliumarsenid unter Verwendung von Silicium oder Germanium als Dotierstoff

Publications (1)

Publication Number Publication Date
CA954016A true CA954016A (en) 1974-09-03

Family

ID=5769964

Family Applications (1)

Application Number Title Priority Date Filing Date
CA111,837A Expired CA954016A (en) 1970-04-30 1971-04-30 Production of doped gallium arsenide

Country Status (8)

Country Link
US (1) US3725284A (de)
AT (1) AT315919B (de)
CA (1) CA954016A (de)
CH (1) CH542654A (de)
DE (1) DE2021345A1 (de)
FR (1) FR2090928A5 (de)
GB (1) GB1309347A (de)
NL (1) NL7105569A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2414856C2 (de) * 1974-03-27 1983-01-27 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Herstellen einer Halbleiterverbindung, insbesondere Galliumphosphid
US4162293A (en) * 1974-03-27 1979-07-24 Siemens Aktiengesellschaft Apparatus for preparation of a compound or an alloy
DE2414776C2 (de) * 1974-03-27 1984-04-19 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum Herstellen einer Verbindung oder Legierung
FR2416729A1 (fr) * 1978-02-09 1979-09-07 Radiotechnique Compelec Perfectionnement au procede de fabrication d'un monocristal de compose iii-v''
JPS5914440B2 (ja) * 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法
US4891091A (en) * 1986-07-14 1990-01-02 Gte Laboratories Incorporated Method of epitaxially growing compound semiconductor materials
US4699688A (en) * 1986-07-14 1987-10-13 Gte Laboratories Incorporated Method of epitaxially growing gallium arsenide on silicon
US5183767A (en) * 1991-02-14 1993-02-02 International Business Machines Corporation Method for internal gettering of oxygen in iii-v compound semiconductors
US5272373A (en) * 1991-02-14 1993-12-21 International Business Machines Corporation Internal gettering of oxygen in III-V compound semiconductors

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3278342A (en) * 1963-10-14 1966-10-11 Westinghouse Electric Corp Method of growing crystalline members completely within the solution melt
US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices

Also Published As

Publication number Publication date
CH542654A (de) 1973-10-15
GB1309347A (en) 1973-03-07
NL7105569A (de) 1971-11-02
US3725284A (en) 1973-04-03
FR2090928A5 (de) 1972-01-14
DE2021345A1 (de) 1972-01-13
AT315919B (de) 1974-06-25

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