CA951436A - Ferroelectric device and process of manufacturing same - Google Patents

Ferroelectric device and process of manufacturing same

Info

Publication number
CA951436A
CA951436A CA123,752,A CA123752A CA951436A CA 951436 A CA951436 A CA 951436A CA 123752 A CA123752 A CA 123752A CA 951436 A CA951436 A CA 951436A
Authority
CA
Canada
Prior art keywords
manufacturing same
ferroelectric device
ferroelectric
manufacturing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA123,752,A
Other languages
English (en)
Other versions
CA123752S (en
Inventor
George A. Rohrer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technovation Inc
Original Assignee
Technovation Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technovation Inc filed Critical Technovation Inc
Application granted granted Critical
Publication of CA951436A publication Critical patent/CA951436A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
    • H01G7/02—Electrets, i.e. having a permanently-polarised dielectric
    • H01G7/025—Electrets, i.e. having a permanently-polarised dielectric having an inorganic dielectric

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Physical Vapour Deposition (AREA)
  • Non-Volatile Memory (AREA)
  • Inorganic Insulating Materials (AREA)
CA123,752,A 1970-09-28 1971-09-27 Ferroelectric device and process of manufacturing same Expired CA951436A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7605970A 1970-09-28 1970-09-28

Publications (1)

Publication Number Publication Date
CA951436A true CA951436A (en) 1974-07-16

Family

ID=22129683

Family Applications (1)

Application Number Title Priority Date Filing Date
CA123,752,A Expired CA951436A (en) 1970-09-28 1971-09-27 Ferroelectric device and process of manufacturing same

Country Status (7)

Country Link
US (1) US3728694A (show.php)
JP (1) JPS5244181B1 (show.php)
CA (1) CA951436A (show.php)
DE (1) DE2147028A1 (show.php)
FR (1) FR2108045B1 (show.php)
GB (1) GB1325961A (show.php)
NL (1) NL7113279A (show.php)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5214300A (en) * 1970-09-28 1993-05-25 Ramtron Corporation Monolithic semiconductor integrated circuit ferroelectric memory device
US4713157A (en) * 1976-02-17 1987-12-15 Ramtron Corporation Combined integrated circuit/ferroelectric memory device, and ion beam methods of constructing same
FR2341929A2 (fr) * 1977-02-09 1977-09-16 Technovation Dispositif ferroelectrique et sa methode de fabrication
US4149301A (en) * 1977-07-25 1979-04-17 Ferrosil Corporation Monolithic semiconductor integrated circuit-ferroelectric memory drive
JPS62222512A (ja) * 1986-03-20 1987-09-30 キヤノン株式会社 誘電体材料
US4946710A (en) * 1987-06-02 1990-08-07 National Semiconductor Corporation Method for preparing PLZT, PZT and PLT sol-gels and fabricating ferroelectric thin films
US5063539A (en) * 1988-10-31 1991-11-05 Raytheon Company Ferroelectric memory with diode isolation
US5168420A (en) * 1990-11-20 1992-12-01 Bell Communications Research, Inc. Ferroelectrics epitaxially grown on superconducting substrates
US5273927A (en) * 1990-12-03 1993-12-28 Micron Technology, Inc. Method of making a ferroelectric capacitor and forming local interconnect
US5926412A (en) * 1992-02-09 1999-07-20 Raytheon Company Ferroelectric memory structure
US5392189A (en) 1993-04-02 1995-02-21 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
US6791131B1 (en) * 1993-04-02 2004-09-14 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
US5524092A (en) * 1995-02-17 1996-06-04 Park; Jea K. Multilayered ferroelectric-semiconductor memory-device
TW456027B (en) * 1999-08-18 2001-09-21 Matsushita Electronics Corp Method of making ferroelectric thin film, ferroelectric capacitor, ferroelectric memory and method for fabricating ferroelectric memory
US8519846B2 (en) 2004-03-16 2013-08-27 Newage Industries, Inc. Tracking system for gamma radiation sterilized bags and disposable items
US8592767B2 (en) * 2006-08-07 2013-11-26 The Trustees Of The University Of Pennsylvania Tunable ferroelectric supported catalysts and method and uses thereof
US8405508B2 (en) 2006-08-09 2013-03-26 Emd Millipore Corporation Use of gamma hardened RFID tags in pharmaceutical devices
CN101784876A (zh) 2007-08-02 2010-07-21 米利波尔公司 采样系统
US20090256679A1 (en) * 2008-04-11 2009-10-15 General Electric Company Rfid based methods and systems for use in manufacturing and monitoring applications
US20100006204A1 (en) 2008-07-07 2010-01-14 Millipore Corporation Wireless enabled bags and containers
FR2935537B1 (fr) * 2008-08-28 2010-10-22 Soitec Silicon On Insulator Procede d'initiation d'adhesion moleculaire
FR2943177B1 (fr) 2009-03-12 2011-05-06 Soitec Silicon On Insulator Procede de fabrication d'une structure multicouche avec report de couche circuit
FR2947380B1 (fr) 2009-06-26 2012-12-14 Soitec Silicon Insulator Technologies Procede de collage par adhesion moleculaire.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3142044A (en) * 1961-05-17 1964-07-21 Litton Systems Inc Ceramic memory element

Also Published As

Publication number Publication date
DE2147028A1 (de) 1972-04-06
FR2108045B1 (show.php) 1976-06-04
NL7113279A (show.php) 1972-03-30
GB1325961A (en) 1973-08-08
US3728694A (en) 1973-04-17
JPS5244181B1 (show.php) 1977-11-05
FR2108045A1 (show.php) 1972-05-12

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