CA950334A - Manufacture of epitaxially crown layers of semiconductor compounds - Google Patents

Manufacture of epitaxially crown layers of semiconductor compounds

Info

Publication number
CA950334A
CA950334A CA088,356,A CA88356A CA950334A CA 950334 A CA950334 A CA 950334A CA 88356 A CA88356 A CA 88356A CA 950334 A CA950334 A CA 950334A
Authority
CA
Canada
Prior art keywords
epitaxially
manufacture
semiconductor compounds
crown layers
crown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA088,356,A
Other languages
English (en)
Other versions
CA88356S (en
Inventor
Peter Jochen
Gunter Winstel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA950334A publication Critical patent/CA950334A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/08—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/061—Tipping system, e.g. by rotation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/056—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA088,356,A 1969-07-17 1970-07-16 Manufacture of epitaxially crown layers of semiconductor compounds Expired CA950334A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1936443A DE1936443C3 (de) 1969-07-17 1969-07-17 Vorrichtung zum Aufwachsen homogen dotierter, planparalleler epitaktischer ScNchten aus halbleitenden Verbindungen durch Schmelzepitaxie

Publications (1)

Publication Number Publication Date
CA950334A true CA950334A (en) 1974-07-02

Family

ID=5740132

Family Applications (1)

Application Number Title Priority Date Filing Date
CA088,356,A Expired CA950334A (en) 1969-07-17 1970-07-16 Manufacture of epitaxially crown layers of semiconductor compounds

Country Status (10)

Country Link
US (1) US3762943A (cs)
JP (1) JPS508911B1 (cs)
AT (1) AT307508B (cs)
CA (1) CA950334A (cs)
CH (1) CH512261A (cs)
DE (1) DE1936443C3 (cs)
FR (1) FR2051808B1 (cs)
GB (1) GB1290400A (cs)
NL (1) NL7007455A (cs)
SE (1) SE351569B (cs)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5213510B2 (cs) * 1973-02-26 1977-04-14
US3898051A (en) * 1973-12-28 1975-08-05 Crystal Syst Crystal growing
US4359012A (en) * 1978-01-19 1982-11-16 Handotai Kenkyu Shinkokai Apparatus for producing a semiconductor device utlizing successive liquid growth
US4238252A (en) * 1979-07-11 1980-12-09 Hughes Aircraft Company Process for growing indium phosphide of controlled purity
US4401487A (en) * 1980-11-14 1983-08-30 Hughes Aircraft Company Liquid phase epitaxy of mercury cadmium telluride layer
US5011564A (en) * 1986-05-28 1991-04-30 Massachusetts Institute Of Technology Epitaxial growth
US4764350A (en) * 1986-10-08 1988-08-16 The United States Of America As Represented By The Secretary Of The Air Force Method and apparatus for synthesizing a single crystal of indium phosphide
JPH031359A (ja) * 1989-01-31 1991-01-08 Victor Co Of Japan Ltd 磁気記録装置

Also Published As

Publication number Publication date
DE1936443A1 (de) 1971-01-28
FR2051808A1 (cs) 1971-04-09
JPS508911B1 (cs) 1975-04-08
SE351569B (cs) 1972-12-04
DE1936443C3 (de) 1975-03-06
DE1936443B2 (de) 1974-07-11
NL7007455A (cs) 1971-01-19
US3762943A (en) 1973-10-02
AT307508B (de) 1973-05-25
FR2051808B1 (cs) 1974-05-03
CH512261A (de) 1971-09-15
GB1290400A (cs) 1972-09-27

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