CA936969A - Control of beta gain factor of transistors - Google Patents
Control of beta gain factor of transistorsInfo
- Publication number
- CA936969A CA936969A CA105068A CA105068A CA936969A CA 936969 A CA936969 A CA 936969A CA 105068 A CA105068 A CA 105068A CA 105068 A CA105068 A CA 105068A CA 936969 A CA936969 A CA 936969A
- Authority
- CA
- Canada
- Prior art keywords
- transistors
- control
- gain factor
- beta gain
- beta
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/133—Emitter regions of BJTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/641—Combinations of only vertical BJTs
- H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2535770A | 1970-04-03 | 1970-04-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA936969A true CA936969A (en) | 1973-11-13 |
Family
ID=21825553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA105068A Expired CA936969A (en) | 1970-04-03 | 1971-02-10 | Control of beta gain factor of transistors |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS4814638B1 (enrdf_load_stackoverflow) |
BE (1) | BE765014A (enrdf_load_stackoverflow) |
CA (1) | CA936969A (enrdf_load_stackoverflow) |
DE (1) | DE2115248A1 (enrdf_load_stackoverflow) |
FR (1) | FR2085821B1 (enrdf_load_stackoverflow) |
GB (1) | GB1334902A (enrdf_load_stackoverflow) |
NL (1) | NL7104445A (enrdf_load_stackoverflow) |
SE (1) | SE366152B (enrdf_load_stackoverflow) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2445480A1 (de) * | 1974-09-24 | 1976-04-01 | Ibm Deutschland | Verfahren zur herstellung eines leistungstransistors |
JPS52166150U (enrdf_load_stackoverflow) * | 1976-06-10 | 1977-12-16 | ||
JPS5317961U (enrdf_load_stackoverflow) * | 1976-07-27 | 1978-02-15 | ||
DE2737073C3 (de) * | 1977-08-17 | 1981-09-17 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen eines Isolierschicht-Feldeffekttransistors für eine Ein-Transistor-Speicherzelle |
JPS5946415B2 (ja) * | 1978-04-28 | 1984-11-12 | 株式会社日立製作所 | 半導体装置の製造方法 |
-
1970
- 1970-12-24 JP JP45125105A patent/JPS4814638B1/ja active Pending
-
1971
- 1971-02-10 CA CA105068A patent/CA936969A/en not_active Expired
- 1971-03-30 BE BE765014A patent/BE765014A/xx unknown
- 1971-03-30 DE DE19712115248 patent/DE2115248A1/de active Pending
- 1971-03-31 SE SE04180/71A patent/SE366152B/xx unknown
- 1971-04-01 FR FR7111473A patent/FR2085821B1/fr not_active Expired
- 1971-04-02 NL NL7104445A patent/NL7104445A/xx unknown
- 1971-04-19 GB GB2531371*A patent/GB1334902A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1334902A (en) | 1973-10-24 |
SE366152B (enrdf_load_stackoverflow) | 1974-04-08 |
DE2115248A1 (de) | 1971-10-21 |
FR2085821A1 (enrdf_load_stackoverflow) | 1971-12-31 |
FR2085821B1 (enrdf_load_stackoverflow) | 1977-01-28 |
BE765014A (fr) | 1971-08-16 |
NL7104445A (enrdf_load_stackoverflow) | 1971-10-05 |
JPS4814638B1 (enrdf_load_stackoverflow) | 1973-05-09 |
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