CA931661A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
CA931661A
CA931661A CA124476A CA124476A CA931661A CA 931661 A CA931661 A CA 931661A CA 124476 A CA124476 A CA 124476A CA 124476 A CA124476 A CA 124476A CA 931661 A CA931661 A CA 931661A
Authority
CA
Canada
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA124476A
Other languages
English (en)
Other versions
CA124476S (en
Inventor
Fujita Takashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of CA931661A publication Critical patent/CA931661A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/749—Thyristor-type devices, e.g. having four-zone regenerative action with turn-on by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
CA124476A 1970-10-08 1971-10-05 Semiconductor device Expired CA931661A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8914770A JPS5125116B1 (fr) 1970-10-08 1970-10-08

Publications (1)

Publication Number Publication Date
CA931661A true CA931661A (en) 1973-08-07

Family

ID=13962739

Family Applications (1)

Application Number Title Priority Date Filing Date
CA124476A Expired CA931661A (en) 1970-10-08 1971-10-05 Semiconductor device

Country Status (6)

Country Link
JP (1) JPS5125116B1 (fr)
CA (1) CA931661A (fr)
DE (1) DE2149760A1 (fr)
FR (1) FR2110299B1 (fr)
GB (1) GB1356670A (fr)
NL (1) NL7113770A (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2904424C2 (de) * 1979-02-06 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor
DE2915885C2 (de) * 1979-04-19 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Thyristor mit Steuerung durch Feldeffekttransistor
DE2945380A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Triac mit einem mehrschichten-halbleiterkoerper
DE2945347A1 (de) * 1979-11-09 1981-05-21 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hilfsemitterelektrode und verfahren zu seinem betrieb
DE2945366A1 (de) * 1979-11-09 1981-05-14 Siemens AG, 1000 Berlin und 8000 München Thyristor mit steuerbaren emitter-kurzschluessen
FR2488046A1 (fr) * 1980-07-31 1982-02-05 Silicium Semiconducteur Ssc Dispositif de puissance a commande par transistor dmos
GB2243021A (en) * 1990-04-09 1991-10-16 Philips Electronic Associated Mos- gated thyristor
JPH07335858A (ja) * 1994-06-08 1995-12-22 Fuji Electric Co Ltd 絶縁ゲートサイリスタおよびその制御方法
FR3127456A1 (fr) 2021-09-30 2023-03-31 Psa Automobiles Sa Console centrale à organe de commande à deux déclencheurs d’éclairage interne, pour un véhicule

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5113802B2 (fr) * 1972-09-13 1976-05-04

Also Published As

Publication number Publication date
FR2110299A1 (fr) 1972-06-02
NL7113770A (fr) 1972-04-11
DE2149760A1 (de) 1972-04-13
GB1356670A (en) 1974-06-12
FR2110299B1 (fr) 1976-09-03
AU3396471A (en) 1973-04-05
JPS5125116B1 (fr) 1976-07-28

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